Distribution and thickness of the surface contaminations on STM tungsten tips, studied by AES/SEM and ARXPS

Wojciech F. Lisowski; Albert H.J. van den Berg; Lambertus J. Hanekamp; Arend van Silfhout

doi:10.1007/BF01244472

Distribution and thickness of the surface contaminations on STM tungsten tips, studied by AES/SEM and ARXPS

Wojciech F. Lisowski, Albert H.J. van den Berg, Lambertus J. Hanekamp, Arend van Silfhout

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Abstract

The combination of Auger electron spectroscopy (AES), scanning electron microscopy (SEM) and angle resolved X-ray photoelectron spectroscopy (ARXPS) has been applied to the analysis of the distribution of elements at the surface region of electrochemically etched tungsten tips and the determination of the thickness of a layer with oxygen and carbon contamination. Auger line profiling revealed a homogeneous distribution of oxygen and significant enrichment of carbon on the W tip between 0 and 1.5 μm from the top. The thickness of the contamination layer on various W materials, electrochemically etched, was found to be 1.35±0.15 nm as measured using ARXPS, and was estimated to be about 1–3 nm as measured by AES.

Original language	English
Pages (from-to)	189-196
Journal	Microchimica acta
Volume	107
Issue number	3-6
DOIs	https://doi.org/10.1007/BF01244472
Publication status	Published - 1992

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@article{240b9c7c718f404486adbab6ae42887e,

title = "Distribution and thickness of the surface contaminations on STM tungsten tips, studied by AES/SEM and ARXPS",

abstract = "The combination of Auger electron spectroscopy (AES), scanning electron microscopy (SEM) and angle resolved X-ray photoelectron spectroscopy (ARXPS) has been applied to the analysis of the distribution of elements at the surface region of electrochemically etched tungsten tips and the determination of the thickness of a layer with oxygen and carbon contamination. Auger line profiling revealed a homogeneous distribution of oxygen and significant enrichment of carbon on the W tip between 0 and 1.5 μm from the top. The thickness of the contamination layer on various W materials, electrochemically etched, was found to be 1.35±0.15 nm as measured using ARXPS, and was estimated to be about 1–3 nm as measured by AES.",

author = "Lisowski, {Wojciech F.} and {van den Berg}, {Albert H.J.} and Hanekamp, {Lambertus J.} and {van Silfhout}, Arend",

year = "1992",

doi = "10.1007/BF01244472",

language = "English",

volume = "107",

pages = "189--196",

journal = "Microchimica acta",

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publisher = "Springer",

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TY - JOUR

T1 - Distribution and thickness of the surface contaminations on STM tungsten tips, studied by AES/SEM and ARXPS

AU - Lisowski, Wojciech F.

AU - van den Berg, Albert H.J.

AU - Hanekamp, Lambertus J.

AU - van Silfhout, Arend

PY - 1992

Y1 - 1992

N2 - The combination of Auger electron spectroscopy (AES), scanning electron microscopy (SEM) and angle resolved X-ray photoelectron spectroscopy (ARXPS) has been applied to the analysis of the distribution of elements at the surface region of electrochemically etched tungsten tips and the determination of the thickness of a layer with oxygen and carbon contamination. Auger line profiling revealed a homogeneous distribution of oxygen and significant enrichment of carbon on the W tip between 0 and 1.5 μm from the top. The thickness of the contamination layer on various W materials, electrochemically etched, was found to be 1.35±0.15 nm as measured using ARXPS, and was estimated to be about 1–3 nm as measured by AES.

AB - The combination of Auger electron spectroscopy (AES), scanning electron microscopy (SEM) and angle resolved X-ray photoelectron spectroscopy (ARXPS) has been applied to the analysis of the distribution of elements at the surface region of electrochemically etched tungsten tips and the determination of the thickness of a layer with oxygen and carbon contamination. Auger line profiling revealed a homogeneous distribution of oxygen and significant enrichment of carbon on the W tip between 0 and 1.5 μm from the top. The thickness of the contamination layer on various W materials, electrochemically etched, was found to be 1.35±0.15 nm as measured using ARXPS, and was estimated to be about 1–3 nm as measured by AES.

U2 - 10.1007/BF01244472

DO - 10.1007/BF01244472

M3 - Article

VL - 107

SP - 189

EP - 196

JO - Microchimica acta

JF - Microchimica acta

SN - 0026-3672

IS - 3-6

ER -

Distribution and thickness of the surface contaminations on STM tungsten tips, studied by AES/SEM and ARXPS

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