Distributions of boron and phosphorus implanted in silicon in the energy range 0.1–1.5 MeV

S. Oosterhoff

doi:10.1016/0168-583X(88)90070-5

Distributions of boron and phosphorus implanted in silicon in the energy range 0.1–1.5 MeV

S. Oosterhoff

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Abstract

Boron and phosphorus were implanted in p-type and n-type silicon wafers in the energy range from 0.1 to 1.5 MeV. Three different methods were used to determine the distribution of the ions: SIMS, CV and NRA. The results were fitted to a Pearson IV distribution in order to extract moments for describing the distributions analytically. The projected ranges agree well with the theoretical values. Deviations are observed at higher energies. Projected range standard deviations are significantly greater than the tabulated values. The skewness clearly deviates from available tabulated data, although the same trend is observed.

Original language	Undefined
Pages (from-to)	1-12
Journal	Nuclear instruments and methods in physics research. Section B : Beam interactions with materials and atoms
Volume	30
Issue number	1
DOIs	https://doi.org/10.1016/0168-583X(88)90070-5
Publication status	Published - 1988

Keywords

IR-70036

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10.1016/0168-583X(88)90070-5

Oosterhoff88distributions

Cite this

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title = "Distributions of boron and phosphorus implanted in silicon in the energy range 0.1–1.5 MeV",

abstract = "Boron and phosphorus were implanted in p-type and n-type silicon wafers in the energy range from 0.1 to 1.5 MeV. Three different methods were used to determine the distribution of the ions: SIMS, CV and NRA. The results were fitted to a Pearson IV distribution in order to extract moments for describing the distributions analytically. The projected ranges agree well with the theoretical values. Deviations are observed at higher energies. Projected range standard deviations are significantly greater than the tabulated values. The skewness clearly deviates from available tabulated data, although the same trend is observed.",

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AU - Oosterhoff, S.

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N2 - Boron and phosphorus were implanted in p-type and n-type silicon wafers in the energy range from 0.1 to 1.5 MeV. Three different methods were used to determine the distribution of the ions: SIMS, CV and NRA. The results were fitted to a Pearson IV distribution in order to extract moments for describing the distributions analytically. The projected ranges agree well with the theoretical values. Deviations are observed at higher energies. Projected range standard deviations are significantly greater than the tabulated values. The skewness clearly deviates from available tabulated data, although the same trend is observed.

AB - Boron and phosphorus were implanted in p-type and n-type silicon wafers in the energy range from 0.1 to 1.5 MeV. Three different methods were used to determine the distribution of the ions: SIMS, CV and NRA. The results were fitted to a Pearson IV distribution in order to extract moments for describing the distributions analytically. The projected ranges agree well with the theoretical values. Deviations are observed at higher energies. Projected range standard deviations are significantly greater than the tabulated values. The skewness clearly deviates from available tabulated data, although the same trend is observed.

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U2 - 10.1016/0168-583X(88)90070-5

DO - 10.1016/0168-583X(88)90070-5

M3 - Article

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EP - 12

JO - Nuclear instruments and methods in physics research. Section B : Beam interactions with materials and atoms

JF - Nuclear instruments and methods in physics research. Section B : Beam interactions with materials and atoms

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