Domain Selectivity in BiFeO3 Thin Films by Modified Substrate Termination

A. Solmaz, Mark Huijben, Gertjan Koster, R. Egoavil, N. Gauquelin, G. van Tendeloo, J. Verbeeck, B. Noheda, Augustinus J.H.M. Rijnders

Research output: Contribution to journalArticleAcademicpeer-review

30 Citations (Scopus)
2 Downloads (Pure)


Ferroelectric domain formation is an essential feature in ferroelectric thin films. These domains and domain walls can be manipulated depending on the growth conditions. In rhombohedral BiFeO3 thin films, the ordering of the domains and the presence of specific types of domain walls play a crucial role in attaining unique ferroelectric and magnetic properties. In this study, controlled ordering of domains in BiFeO3 film is presented, as well as a controlled selectivity between two types of domain walls is presented, i.e., 71° and 109°, by modifying the substrate termination. The experiments on two different substrates, namely SrTiO3 and TbScO3, strongly indicate that the domain selectivity is determined by the growth kinetics of the initial BiFeO3 layers.
Original languageEnglish
Pages (from-to)2882-2889
Number of pages8
JournalAdvanced functional materials
Issue number17
Publication statusPublished - 2016


  • IR-100124
  • METIS-316216


Dive into the research topics of 'Domain Selectivity in BiFeO3 Thin Films by Modified Substrate Termination'. Together they form a unique fingerprint.

Cite this