Abstract
A relation is established between the domain fraction, the domain inclination and the substrate-induced strain of epitaxial PZT thin films, in the tetragonal phase towards the morphotropic phase boundary (Zr-content 1-x=0.2, 0.4, 0.45). The substrate-induced strain is controlled through thermal expansion coefficient mismatch between film and the silicon, KTaO3, DyScO3 and SrTiO3 substrates. A poly domain structure is found by reciprocal space mapping and piezo force microscopy, for which the domain fraction depends strongly on strain, while the lattice strain remains constant. The concept of the effective substrate and a new model based on geometrical arguments is used to derive the volume fraction directly from the lattice parameters. A fit to the x-ray diffraction intensity data is found. Next to the tilted a and b-domains, we observe c-domains which are tilted in both the a and b-direction. The same geometrical model describes this simultaneous buckling of in-plane and out-of-plane domains as function of strain. Furthermore, indications for an increase of the domain-wall width as function of Zrcontent have been obtained.
| Original language | English |
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| Number of pages | 1 |
| Publication status | Published - 24 Jun 2012 |
| Event | Electroceramics XIII 2012 - University of Twente, Enschede, Netherlands Duration: 24 Jun 2012 → 27 Jun 2012 Conference number: 13 |
Conference
| Conference | Electroceramics XIII 2012 |
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| Country/Territory | Netherlands |
| City | Enschede |
| Period | 24/06/12 → 27/06/12 |