Doped SbTe phase change material in memory cells

M.A.A. in ‘t Zandt, F.J. Jedema, Dirk J Gravesteijn, D.J. Gravesteijn, K. Attenborough, Robertus A.M. Wolters

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    Abstract

    Phase Change Random Access Memory (PCRAM) is investigated as replacement for Flash. The memory concept is based on switching a chalcogenide from the crystalline (low ohmic) to the amorphous (high ohmic) state and vice versa. Basically two memory cell concepts exist: the Ovonic Unified Memory (OUM) and the line cell. Switching to the high ohmic or low ohmic state is done using Joule heating. A relatively short (~ns) electrical pulse with large amplitude is used to heat the crystalline phase to melt and quench into the amorphous state (RESET). A pulse with smaller amplitude heats the amorphous region above its crystallization temperature (lower than the melting temperature) and the material returns into the crystalline state (SET). In the OUM cell this will be at the electrode-phase change material contact, whereas for the line cell this will be at the position where the current density is the highest.
    Original languageUndefined
    Title of host publicationProceedings of the International Materials Research Congress (IMRC 2009)
    Place of PublicationCancun, Mexico
    PublisherMaterials Research Society
    Pages-
    Number of pages1
    ISBN (Print)not assigned
    Publication statusPublished - 16 Aug 2009
    EventInternational Materials Research Congress, IMRC 2009 - Cancun, Mexico
    Duration: 16 Aug 200921 Aug 2009

    Publication series

    Name
    PublisherMaterials Research Society

    Conference

    ConferenceInternational Materials Research Congress, IMRC 2009
    Period16/08/0921/08/09
    Other16-21 August 2009

    Keywords

    • METIS-265764
    • SC-ICF: Integrated Circuit Fabrication
    • EWI-17064
    • IR-70057

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