Doping of semiconductors by molecular monolayers: monolayer formation, dopant diffusion and applications

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Abstract

The continuous miniaturization in the semiconductor industry brings electronic devices with higher performance at lower cost. The doping of semiconductor materials plays a crucial role in tuning the electrical properties of the materials. Ion implantation is currently widely used. Yet, this technique faces challenges meeting the requirements for smaller devices. Monolayer doping (MLD) has been proposed as one of the alternative techniques for doping semiconductors. It utilizes dopant-containing organic molecules and grafts them onto semiconductor surfaces. The dopant atoms are subsequently driven into the substrate by high temperature annealing. MLD has shown the capability for ultra-shallow doping and the doping of 3-D structures without causing crystal damage. These features make this technique a promising candidate to dope future electronic devices. In this review the processes for monolayer formation and dopant incorporation by annealing will be discussed, as well as the applications of MLD in device fabrication.

Original languageEnglish
Pages (from-to)128-134
Number of pages7
JournalMaterials science in semiconductor processing
Volume62
DOIs
Publication statusPublished - 1 May 2017

Fingerprint

Monolayers
Doping (additives)
Semiconductor materials
Semiconductor doping
annealing
Annealing
miniaturization
electronics
Electronics industry
ion implantation
Grafts
industries
Ion implantation
electrical properties
tuning
damage
Electric properties
requirements
fabrication
Tuning

Keywords

  • Dopant
  • Germanium
  • Group III-V semiconductors
  • Monolayer doping
  • Silicon
  • Transistor

Cite this

@article{c27c1bb2baee4d9b8bf26632130fc5d8,
title = "Doping of semiconductors by molecular monolayers: monolayer formation, dopant diffusion and applications",
abstract = "The continuous miniaturization in the semiconductor industry brings electronic devices with higher performance at lower cost. The doping of semiconductor materials plays a crucial role in tuning the electrical properties of the materials. Ion implantation is currently widely used. Yet, this technique faces challenges meeting the requirements for smaller devices. Monolayer doping (MLD) has been proposed as one of the alternative techniques for doping semiconductors. It utilizes dopant-containing organic molecules and grafts them onto semiconductor surfaces. The dopant atoms are subsequently driven into the substrate by high temperature annealing. MLD has shown the capability for ultra-shallow doping and the doping of 3-D structures without causing crystal damage. These features make this technique a promising candidate to dope future electronic devices. In this review the processes for monolayer formation and dopant incorporation by annealing will be discussed, as well as the applications of MLD in device fabrication.",
keywords = "Dopant, Germanium, Group III-V semiconductors, Monolayer doping, Silicon, Transistor",
author = "Liang Ye and {de Jong}, {Machiel Pieter} and Tibor Kudernac and {van der Wiel}, {Wilfred G.} and Jurriaan Huskens",
year = "2017",
month = "5",
day = "1",
doi = "10.1016/j.mssp.2016.12.018",
language = "English",
volume = "62",
pages = "128--134",
journal = "Materials science in semiconductor processing",
issn = "1369-8001",
publisher = "Elsevier",

}

TY - JOUR

T1 - Doping of semiconductors by molecular monolayers

T2 - monolayer formation, dopant diffusion and applications

AU - Ye, Liang

AU - de Jong, Machiel Pieter

AU - Kudernac, Tibor

AU - van der Wiel, Wilfred G.

AU - Huskens, Jurriaan

PY - 2017/5/1

Y1 - 2017/5/1

N2 - The continuous miniaturization in the semiconductor industry brings electronic devices with higher performance at lower cost. The doping of semiconductor materials plays a crucial role in tuning the electrical properties of the materials. Ion implantation is currently widely used. Yet, this technique faces challenges meeting the requirements for smaller devices. Monolayer doping (MLD) has been proposed as one of the alternative techniques for doping semiconductors. It utilizes dopant-containing organic molecules and grafts them onto semiconductor surfaces. The dopant atoms are subsequently driven into the substrate by high temperature annealing. MLD has shown the capability for ultra-shallow doping and the doping of 3-D structures without causing crystal damage. These features make this technique a promising candidate to dope future electronic devices. In this review the processes for monolayer formation and dopant incorporation by annealing will be discussed, as well as the applications of MLD in device fabrication.

AB - The continuous miniaturization in the semiconductor industry brings electronic devices with higher performance at lower cost. The doping of semiconductor materials plays a crucial role in tuning the electrical properties of the materials. Ion implantation is currently widely used. Yet, this technique faces challenges meeting the requirements for smaller devices. Monolayer doping (MLD) has been proposed as one of the alternative techniques for doping semiconductors. It utilizes dopant-containing organic molecules and grafts them onto semiconductor surfaces. The dopant atoms are subsequently driven into the substrate by high temperature annealing. MLD has shown the capability for ultra-shallow doping and the doping of 3-D structures without causing crystal damage. These features make this technique a promising candidate to dope future electronic devices. In this review the processes for monolayer formation and dopant incorporation by annealing will be discussed, as well as the applications of MLD in device fabrication.

KW - Dopant

KW - Germanium

KW - Group III-V semiconductors

KW - Monolayer doping

KW - Silicon

KW - Transistor

UR - http://www.scopus.com/inward/record.url?scp=85009809641&partnerID=8YFLogxK

U2 - 10.1016/j.mssp.2016.12.018

DO - 10.1016/j.mssp.2016.12.018

M3 - Review article

VL - 62

SP - 128

EP - 134

JO - Materials science in semiconductor processing

JF - Materials science in semiconductor processing

SN - 1369-8001

ER -