Double-barrier Josephson junctions: theory and experiment

Alexander Brinkman, D. Cassel, Alexandre Avraamovitch Golubov, M. Yu Kupriyanov, M. Siegel, Horst Rogalla

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Abstract

New theoretical and experimental results on double-barrier SIS'IS Josephson junctions are presented (I is a tunnel barrier, S' is a thin film with critical temperature lower than that of S). The previously developed microscopic model for the stationary case, which describes the critical currents in Nb/Al/Nb junctions, is extended to the non-equilibrium regime of finite voltage. In particular, an intrinsic shunting resistance is estimated from I-V curves. We formulate the requirements for interface barriers in order to realize non-hysteretic SIS'IS junctions with high critical current density and IcR N products. A comparison with single-barrier SIS junctions with high critical current density is carried out
Original languageUndefined
Pages (from-to)1146-1149
JournalIEEE transactions on applied superconductivity
Volume11
Issue number1, Par
DOIs
Publication statusPublished - 2001

Keywords

  • IR-55661

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