Double-barrier Josephson junctions: theory and experiment

Alexander Brinkman; D. Cassel; Alexandre Avraamovitch Golubov; M. Yu Kupriyanov; M. Siegel; Horst Rogalla

doi:10.1109/77.919551

Double-barrier Josephson junctions: theory and experiment

Alexander Brinkman, D. Cassel, Alexandre Avraamovitch Golubov, M. Yu Kupriyanov, M. Siegel, Horst Rogalla

Faculty of Science and Technology

Research output: Contribution to journal › Article › Academic

11 Citations (Scopus)

123 Downloads (Pure)

Abstract

New theoretical and experimental results on double-barrier SIS'IS Josephson junctions are presented (I is a tunnel barrier, S' is a thin film with critical temperature lower than that of S). The previously developed microscopic model for the stationary case, which describes the critical currents in Nb/Al/Nb junctions, is extended to the non-equilibrium regime of finite voltage. In particular, an intrinsic shunting resistance is estimated from I-V curves. We formulate the requirements for interface barriers in order to realize non-hysteretic SIS'IS junctions with high critical current density and IcR N products. A comparison with single-barrier SIS junctions with high critical current density is carried out

Original language	Undefined
Pages (from-to)	1146-1149
Journal	IEEE transactions on applied superconductivity
Volume	11
Issue number	1, Par
DOIs	https://doi.org/10.1109/77.919551
Publication status	Published - 2001

Keywords

IR-55661

Access to Document

10.1109/77.919551

00919551

Cite this

@article{fc8be204d2d04c0f8fbeffabec168c6b,

title = "Double-barrier Josephson junctions: theory and experiment",

abstract = "New theoretical and experimental results on double-barrier SIS'IS Josephson junctions are presented (I is a tunnel barrier, S' is a thin film with critical temperature lower than that of S). The previously developed microscopic model for the stationary case, which describes the critical currents in Nb/Al/Nb junctions, is extended to the non-equilibrium regime of finite voltage. In particular, an intrinsic shunting resistance is estimated from I-V curves. We formulate the requirements for interface barriers in order to realize non-hysteretic SIS'IS junctions with high critical current density and IcR N products. A comparison with single-barrier SIS junctions with high critical current density is carried out",

keywords = "IR-55661",

author = "Alexander Brinkman and D. Cassel and Golubov, {Alexandre Avraamovitch} and Kupriyanov, {M. Yu} and M. Siegel and Horst Rogalla",

year = "2001",

doi = "10.1109/77.919551",

language = "Undefined",

volume = "11",

pages = "1146--1149",

journal = "IEEE transactions on applied superconductivity",

issn = "1051-8223",

publisher = "IEEE",

number = "1, Par",

}

TY - JOUR

T1 - Double-barrier Josephson junctions: theory and experiment

AU - Brinkman, Alexander

AU - Cassel, D.

AU - Golubov, Alexandre Avraamovitch

AU - Kupriyanov, M. Yu

AU - Siegel, M.

AU - Rogalla, Horst

PY - 2001

Y1 - 2001

N2 - New theoretical and experimental results on double-barrier SIS'IS Josephson junctions are presented (I is a tunnel barrier, S' is a thin film with critical temperature lower than that of S). The previously developed microscopic model for the stationary case, which describes the critical currents in Nb/Al/Nb junctions, is extended to the non-equilibrium regime of finite voltage. In particular, an intrinsic shunting resistance is estimated from I-V curves. We formulate the requirements for interface barriers in order to realize non-hysteretic SIS'IS junctions with high critical current density and IcR N products. A comparison with single-barrier SIS junctions with high critical current density is carried out

AB - New theoretical and experimental results on double-barrier SIS'IS Josephson junctions are presented (I is a tunnel barrier, S' is a thin film with critical temperature lower than that of S). The previously developed microscopic model for the stationary case, which describes the critical currents in Nb/Al/Nb junctions, is extended to the non-equilibrium regime of finite voltage. In particular, an intrinsic shunting resistance is estimated from I-V curves. We formulate the requirements for interface barriers in order to realize non-hysteretic SIS'IS junctions with high critical current density and IcR N products. A comparison with single-barrier SIS junctions with high critical current density is carried out

KW - IR-55661

U2 - 10.1109/77.919551

DO - 10.1109/77.919551

M3 - Article

SN - 1051-8223

VL - 11

SP - 1146

EP - 1149

JO - IEEE transactions on applied superconductivity

JF - IEEE transactions on applied superconductivity

IS - 1, Par

ER -