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Double-gated Si NW FET sensors: Low-frequency noise and photoelectric properties
F. Gasparyan
, H. Khondkaryan
, A. Arakelyan
, I. Zadorozhnyi
,
S. Pud
, S. Vitusevich
*
*
Corresponding author for this work
Research output
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Contribution to journal
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Article
›
Academic
›
peer-review
6
Citations (Scopus)
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Engineering
Low Frequency
100%
Frequency Noise
100%
Field-Effect Transistor
100%
Gate Voltage
100%
Si Nanowires
100%
Current Drain
50%
Wavelength
50%
Models
25%
Silicon
25%
Signal-to-Noise Ratio
25%
Measurer
25%
Biochemical Sensor
25%
High Value
25%
Photocurrent
25%
Characteristics
25%
Source Voltage
25%
Increasing Ph
25%
Room Temperature
25%
Nanowire
25%
Short Wavelength
25%
Material Science
Sensor
100%
Nanowires
100%
Field Effect Transistors
100%
Liquid
60%
Temperature
20%
Electrolyte
20%
Absorbance
20%
Neuroscience
Signal-to-Noise Ratio
100%
Behavior (Neuroscience)
100%
Chemistry
Photosensitivity
60%