Abstract
YBa2Cu30x thin films have been grown on silicon, SrTi03 and Zr02 substrates using the pulsed laser deposition technique. Special attention has been paid to droplets and outgrowths which appear on the thin films during the growth process. The droplet density was studied as a function of the laser spot size, the laser energy and the target density. The number of droplets could be reduced to 1 per 100 μm2 for a 100 nm thick film, by ta1cing a large laser spot size and low energy density. The droplet density does not depend on the target density in the range from 80 to 94 % . The number of outgrowths could be reduced to 1 per 100 μm2 for a 100 nm thick film by reducing the deposition temperature or increasing the laser frequency. However, the critical temperature of these layers was reduced by 5 to 10 K. Using SAM no differences in composition between
an outgrowth and the rest of the film could be detected.
an outgrowth and the rest of the film could be detected.
Original language | English |
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Title of host publication | High Tc Superconductor Thin Films |
Subtitle of host publication | International Conference on Advanced Materials - ICAM '91 |
Editors | L. Correra |
Publisher | Elsevier |
Pages | 251-256 |
Number of pages | 6 |
ISBN (Print) | 978-0-444-89353-6 |
DOIs | |
Publication status | Published - 1992 |
Event | International Conference on Advanced Materials, ICAM 1991 - Strasbourg, France Duration: 27 May 1991 → 31 May 1991 |
Conference
Conference | International Conference on Advanced Materials, ICAM 1991 |
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Abbreviated title | ICAM |
Country | France |
City | Strasbourg |
Period | 27/05/91 → 31/05/91 |