Dual-Junction Monolithically Integrated Monitoring Photodiode With a Two-Stage 18 GHz 18pA/√Hz TIA in 22 nm FDSOI

Jelle Hette Theodorus Bakker; Nimit Jain; Paul Klatser; Mark S. Oude Alink; Bram Nauta

doi:10.1109/LSSC.2025.3615656

Dual-Junction Monolithically Integrated Monitoring Photodiode With a Two-Stage 18 GHz 18pA/√Hz TIA in 22 nm FDSOI

Jelle Hette Theodorus Bakker
, Nimit Jain
, Paul Klatser
, Mark S. Oude Alink
, Bram Nauta

Integrated Circuit Design

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

We present a Monolithically Integrated (MI) dualjunction monitoring photodiode (PD) and transimpedance amplifier (TIA). The photocurrent originates from the Deep NWell (DNW)/P-type substrate (PSUB) and the P-Well (PW)/DNW junctions. The presented combination of bulk PD and 22nm Fully-Depleted Silicon-On-Insulator (FDSOI) TIA (18GHz bandwidth, 17.8pA/√Hz noise level) advances the state-of-the-art in MI high-speed optical monitoring and reduces the inherent trade-off in MI solutions regarding PD (responsivity & bandwidth) and RF circuitry (ft) performance.

Original language	English
Pages (from-to)	313-316
Number of pages	4
Journal	IEEE Solid State Circuits Letters
Volume	8
Early online date	29 Sept 2025
DOIs	https://doi.org/10.1109/LSSC.2025.3615656
Publication status	Published - 2025

Keywords

Junctions
Vertical cavity surface emitting lasers
Monitoring
Silicon-on-insulator
Noise
Photoconductivity
optical receivers
Inverters
Integrated circuit
Solid state circuits

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10.1109/LSSC.2025.3615656

Dual-Junction_Monolithically_Integrated_Monitoring_Photodiode_With_a_Two-Stage_18_GHz_18pA_Hz_TIA_in_22_nm_FDSOIAccepted author version, 1.4 MB

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@article{89b0e9c3abdf4e258d4f174dfe5612da,

title = "Dual-Junction Monolithically Integrated Monitoring Photodiode With a Two-Stage 18 GHz 18pA/√Hz TIA in 22 nm FDSOI",

abstract = "We present a Monolithically Integrated (MI) dualjunction monitoring photodiode (PD) and transimpedance amplifier (TIA). The photocurrent originates from the Deep NWell (DNW)/P-type substrate (PSUB) and the P-Well (PW)/DNW junctions. The presented combination of bulk PD and 22nm Fully-Depleted Silicon-On-Insulator (FDSOI) TIA (18GHz bandwidth, 17.8pA/√Hz noise level) advances the state-of-the-art in MI high-speed optical monitoring and reduces the inherent trade-off in MI solutions regarding PD (responsivity \& bandwidth) and RF circuitry (ft) performance.",

keywords = "Junctions, Vertical cavity surface emitting lasers, Monitoring, Silicon-on-insulator, Noise, Photoconductivity, optical receivers, Inverters, Integrated circuit, Solid state circuits",

author = "Bakker, \{Jelle Hette Theodorus\} and Nimit Jain and Paul Klatser and \{Oude Alink\}, \{Mark S.\} and Bram Nauta",

year = "2025",

doi = "10.1109/LSSC.2025.3615656",

language = "English",

volume = "8",

pages = "313--316",

journal = "IEEE Solid State Circuits Letters",

issn = "2573-9603",

publisher = "IEEE",

}

TY - JOUR

T1 - Dual-Junction Monolithically Integrated Monitoring Photodiode With a Two-Stage 18 GHz 18pA/√Hz TIA in 22 nm FDSOI

AU - Bakker, Jelle Hette Theodorus

AU - Jain, Nimit

AU - Klatser, Paul

AU - Oude Alink, Mark S.

AU - Nauta, Bram

PY - 2025

Y1 - 2025

N2 - We present a Monolithically Integrated (MI) dualjunction monitoring photodiode (PD) and transimpedance amplifier (TIA). The photocurrent originates from the Deep NWell (DNW)/P-type substrate (PSUB) and the P-Well (PW)/DNW junctions. The presented combination of bulk PD and 22nm Fully-Depleted Silicon-On-Insulator (FDSOI) TIA (18GHz bandwidth, 17.8pA/√Hz noise level) advances the state-of-the-art in MI high-speed optical monitoring and reduces the inherent trade-off in MI solutions regarding PD (responsivity & bandwidth) and RF circuitry (ft) performance.

AB - We present a Monolithically Integrated (MI) dualjunction monitoring photodiode (PD) and transimpedance amplifier (TIA). The photocurrent originates from the Deep NWell (DNW)/P-type substrate (PSUB) and the P-Well (PW)/DNW junctions. The presented combination of bulk PD and 22nm Fully-Depleted Silicon-On-Insulator (FDSOI) TIA (18GHz bandwidth, 17.8pA/√Hz noise level) advances the state-of-the-art in MI high-speed optical monitoring and reduces the inherent trade-off in MI solutions regarding PD (responsivity & bandwidth) and RF circuitry (ft) performance.

KW - Junctions

KW - Vertical cavity surface emitting lasers

KW - Monitoring

KW - Silicon-on-insulator

KW - Noise

KW - Photoconductivity

KW - optical receivers

KW - Inverters

KW - Integrated circuit

KW - Solid state circuits

UR - https://www.scopus.com/pages/publications/105017674864

U2 - 10.1109/LSSC.2025.3615656

DO - 10.1109/LSSC.2025.3615656

M3 - Article

SN - 2573-9603

VL - 8

SP - 313

EP - 316

JO - IEEE Solid State Circuits Letters

JF - IEEE Solid State Circuits Letters

ER -

Dual-Junction Monolithically Integrated Monitoring Photodiode With a Two-Stage 18 GHz 18pA/√Hz TIA in 22 nm FDSOI

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Keywords

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