Abstract
Interdiffusion properties of Mo/Si multilayered films with different morphology of the interlayer between the Mo and Si layers were studied using in-situ small angle xray reflectometry during annealing in a temperature range of 200-325°C. In order to obtain different morphologies of the interlayers, we pre-annealed some of the samples at 350°C, before determining the diffusion properties in the quantified temperature range. This pre-treatment caused a crystallization of the Mo-Si interlayer, visible from XRD measurements. We observed that the determined activation energy for interdiffusion of an interlayer in the crystalline state is considerably higher than for an interlayer in an amorphous state. Furthermore, the diffusion rate at fixed temperatures decreases gradually as a function of time caused by an increase of the activation energy. We also observe that the activation energy appears to be a limiting factor for interdiffusion at temperatures below 300°C. Above this temperature the
proportionality constant for diffusion starts to become the dominant factor, probably related to the diffusion along grain boundaries of the nano-sized crystallites which
form in the course of the pre-annealing.
proportionality constant for diffusion starts to become the dominant factor, probably related to the diffusion along grain boundaries of the nano-sized crystallites which
form in the course of the pre-annealing.
| Original language | English |
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| Number of pages | 1 |
| Publication status | Published - 14 Feb 2010 |
| Event | 10th International Conference on the Physics of X-Ray Multilayer Structures (PXRMS) - Montana, USA Duration: 14 Feb 2010 → 18 Feb 2010 |
Conference
| Conference | 10th International Conference on the Physics of X-Ray Multilayer Structures (PXRMS) |
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| City | Montana, USA |
| Period | 14/02/10 → 18/02/10 |