Dynamic ferromagnetic proximity effect in photoexcited semiconductors

Gerrit E.W. Bauer; Arne Brataas; Yaroslav Tserkovnyak; Betrand I. Halperin; M. Zwierzycki; Paul J. Kelly

doi:10.1103/PhysRevLett.92.126601

Dynamic ferromagnetic proximity effect in photoexcited semiconductors

Gerrit E.W. Bauer, Arne Brataas, Yaroslav Tserkovnyak, Betrand I. Halperin, M. Zwierzycki, Paul J. Kelly

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Abstract

The spin dynamics of photoexcited carriers in semiconductors in contact with a ferromagnet is treated theoretically and compared with time-dependent Faraday rotation experiments. The long-time response of the system is found to be governed by the first tens of picoseconds in which the excited plasma interacts strongly with the intrinsic interface between the semiconductor and the ferromagnet in spite of the existence of a Schottky barrier in equilibrium.

Original language	Undefined
Pages (from-to)	126601-1-126601-4
Number of pages	4
Journal	Physical review letters
Volume	92
Issue number	12
DOIs	https://doi.org/10.1103/PhysRevLett.92.126601
Publication status	Published - 2004

Keywords

IR-47320
METIS-217649

Access to Document

10.1103/PhysRevLett.92.126601

dynamic_ferromagnetic
open

Cite this

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abstract = "The spin dynamics of photoexcited carriers in semiconductors in contact with a ferromagnet is treated theoretically and compared with time-dependent Faraday rotation experiments. The long-time response of the system is found to be governed by the first tens of picoseconds in which the excited plasma interacts strongly with the intrinsic interface between the semiconductor and the ferromagnet in spite of the existence of a Schottky barrier in equilibrium.",

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T1 - Dynamic ferromagnetic proximity effect in photoexcited semiconductors

AU - Bauer, Gerrit E.W.

AU - Brataas, Arne

AU - Tserkovnyak, Yaroslav

AU - Halperin, Betrand I.

AU - Zwierzycki, M.

AU - Kelly, Paul J.

PY - 2004

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AB - The spin dynamics of photoexcited carriers in semiconductors in contact with a ferromagnet is treated theoretically and compared with time-dependent Faraday rotation experiments. The long-time response of the system is found to be governed by the first tens of picoseconds in which the excited plasma interacts strongly with the intrinsic interface between the semiconductor and the ferromagnet in spite of the existence of a Schottky barrier in equilibrium.

KW - IR-47320

KW - METIS-217649

U2 - 10.1103/PhysRevLett.92.126601

DO - 10.1103/PhysRevLett.92.126601

M3 - Article

VL - 92

SP - 126601-1-126601-4

JO - Physical review letters

JF - Physical review letters

SN - 0031-9007

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