Early resistance change and stress/electromigration evolution in near bamboo interconnects

V. Petrescu; A.J. Mouthaan; G. Dima; B. Govoreanu; O. Mitrea; M. Profirescu

doi:10.1109/SMICND.1997.651013

Early resistance change and stress/electromigration evolution in near bamboo interconnects

V. Petrescu, A.J. Mouthaan, G. Dima, B. Govoreanu, O. Mitrea, M. Profirescu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

A complete description for early resistance change and mechanical stress evolution in near-bamboo interconnects, related to the electromigration, is given in this paper. The proposed model, for the first time, combines the stress/vacancy concentration evolution with the early resistance change of the Al line with a near-bamboo microstructure, which has been proven to be a fast technique for prediction of the MTF of a line compared to the conventional (accelerated) stress

Original language	Undefined
Title of host publication	Proceedings of 1997 International Semiconductor Conference
Place of Publication	Sinaia Romania
Publisher	IEEE
Pages	311-314
Number of pages	4
ISBN (Print)	9780780338043
DOIs	https://doi.org/10.1109/SMICND.1997.651013
Publication status	Published - 1 Jan 1997
Event	20th International Semiconductor Conference, CAS'97 - Sinaia, Romania Duration: 7 Oct 1997 → 11 Oct 1997 Conference number: 20

Publication series

Name
Publisher	IEEE
Volume	2

Conference

Conference	20th International Semiconductor Conference, CAS'97
Abbreviated title	CAS 1997
Country/Territory	Romania
City	Sinaia
Period	7/10/97 → 11/10/97

Keywords

METIS-113870
IR-16985

Access to Document

10.1109/SMICND.1997.651013

00651013

Cite this

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title = "Early resistance change and stress/electromigration evolution in near bamboo interconnects",

abstract = "A complete description for early resistance change and mechanical stress evolution in near-bamboo interconnects, related to the electromigration, is given in this paper. The proposed model, for the first time, combines the stress/vacancy concentration evolution with the early resistance change of the Al line with a near-bamboo microstructure, which has been proven to be a fast technique for prediction of the MTF of a line compared to the conventional (accelerated) stress",

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author = "V. Petrescu and A.J. Mouthaan and G. Dima and B. Govoreanu and O. Mitrea and M. Profirescu",

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month = jan,

day = "1",

doi = "10.1109/SMICND.1997.651013",

language = "Undefined",

isbn = "9780780338043",

publisher = "IEEE",

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Petrescu, V, Mouthaan, AJ, Dima, G, Govoreanu, B, Mitrea, O & Profirescu, M 1997, Early resistance change and stress/electromigration evolution in near bamboo interconnects. in Proceedings of 1997 International Semiconductor Conference. IEEE, Sinaia Romania, pp. 311-314, 20th International Semiconductor Conference, CAS'97, Sinaia, Romania, 7/10/97. https://doi.org/10.1109/SMICND.1997.651013

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T1 - Early resistance change and stress/electromigration evolution in near bamboo interconnects

AU - Petrescu, V.

AU - Mouthaan, A.J.

AU - Dima, G.

AU - Govoreanu, B.

AU - Mitrea, O.

AU - Profirescu, M.

N1 - Conference code: 20

PY - 1997/1/1

Y1 - 1997/1/1

N2 - A complete description for early resistance change and mechanical stress evolution in near-bamboo interconnects, related to the electromigration, is given in this paper. The proposed model, for the first time, combines the stress/vacancy concentration evolution with the early resistance change of the Al line with a near-bamboo microstructure, which has been proven to be a fast technique for prediction of the MTF of a line compared to the conventional (accelerated) stress

AB - A complete description for early resistance change and mechanical stress evolution in near-bamboo interconnects, related to the electromigration, is given in this paper. The proposed model, for the first time, combines the stress/vacancy concentration evolution with the early resistance change of the Al line with a near-bamboo microstructure, which has been proven to be a fast technique for prediction of the MTF of a line compared to the conventional (accelerated) stress

KW - METIS-113870

KW - IR-16985

U2 - 10.1109/SMICND.1997.651013

DO - 10.1109/SMICND.1997.651013

M3 - Conference contribution

SN - 9780780338043

SP - 311

EP - 314

BT - Proceedings of 1997 International Semiconductor Conference

PB - IEEE

CY - Sinaia Romania

T2 - 20th International Semiconductor Conference, CAS'97

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