Early resistance change and stress/electromigration evolution in near bamboo interconnects

V. Petrescu, A.J. Mouthaan, G. Dima, B. Govoreanu, O. Mitrea, M. Profirescu

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    Abstract

    A complete description for early resistance change and mechanical stress evolution in near-bamboo interconnects, related to the electromigration, is given in this paper. The proposed model, for the first time, combines the stress/vacancy concentration evolution with the early resistance change of the Al line with a near-bamboo microstructure, which has been proven to be a fast technique for prediction of the MTF of a line compared to the conventional (accelerated) stress
    Original languageUndefined
    Title of host publicationProceedings of 1997 International Semiconductor Conference
    Place of PublicationSinaia Romania
    PublisherIEEE
    Pages311-314
    Number of pages4
    ISBN (Print)9780780338043
    DOIs
    Publication statusPublished - 1 Jan 1997
    Event20th International Semiconductor Conference, CAS'97 - Sinaia, Romania
    Duration: 7 Oct 199711 Oct 1997
    Conference number: 20

    Publication series

    Name
    PublisherIEEE
    Volume2

    Conference

    Conference20th International Semiconductor Conference, CAS'97
    Abbreviated titleCAS 1997
    CountryRomania
    CitySinaia
    Period7/10/9711/10/97

    Keywords

    • METIS-113870
    • IR-16985

    Cite this

    Petrescu, V., Mouthaan, A. J., Dima, G., Govoreanu, B., Mitrea, O., & Profirescu, M. (1997). Early resistance change and stress/electromigration evolution in near bamboo interconnects. In Proceedings of 1997 International Semiconductor Conference (pp. 311-314). Sinaia Romania: IEEE. https://doi.org/10.1109/SMICND.1997.651013