Early resistance change and stress/electromigrationmodeling in aluminium interconnects

V. Petrescu; A.J. Mouthaan; W. Schoenmaker

doi:10.1016/S0026-2714(97)00093-0

Early resistance change and stress/electromigrationmodeling in aluminium interconnects

V. Petrescu, A.J. Mouthaan, W. Schoenmaker

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

A complete description for early resistance change and two dimensional simulation of mechanical stress evolution in confined Al interconnects, related to the electromigration, is given in this paper. The model, combines the stress/ vacancy concentration evolution with the early resistance change of the Al line, that could be [1] a fast technique for prediction of the MTF of a line compared to the conventional (accelerated) tests.

Original language	Undefined
Pages (from-to)	1491-1494
Number of pages	4
Journal	Microelectronics reliability
Volume	37
Issue number	37
DOIs	https://doi.org/10.1016/S0026-2714(97)00093-0
Publication status	Published - 1997

Keywords

METIS-112007
IR-15135

Access to Document

10.1016/S0026-2714(97)00093-0

Petrescu97early

Cite this

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title = "Early resistance change and stress/electromigrationmodeling in aluminium interconnects",

abstract = "A complete description for early resistance change and two dimensional simulation of mechanical stress evolution in confined Al interconnects, related to the electromigration, is given in this paper. The model, combines the stress/ vacancy concentration evolution with the early resistance change of the Al line, that could be [1] a fast technique for prediction of the MTF of a line compared to the conventional (accelerated) tests.",

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year = "1997",

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journal = "Microelectronics reliability",

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AU - Petrescu, V.

AU - Mouthaan, A.J.

AU - Schoenmaker, W.

PY - 1997

Y1 - 1997

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AB - A complete description for early resistance change and two dimensional simulation of mechanical stress evolution in confined Al interconnects, related to the electromigration, is given in this paper. The model, combines the stress/ vacancy concentration evolution with the early resistance change of the Al line, that could be [1] a fast technique for prediction of the MTF of a line compared to the conventional (accelerated) tests.

KW - METIS-112007

KW - IR-15135

U2 - 10.1016/S0026-2714(97)00093-0

DO - 10.1016/S0026-2714(97)00093-0

M3 - Article

SN - 0026-2714

VL - 37

SP - 1491

EP - 1494

JO - Microelectronics reliability

JF - Microelectronics reliability

IS - 37

ER -