Early resistance change and stress/electromigrationmodeling in aluminium interconnects

V. Petrescu, A.J. Mouthaan, W. Schoenmaker

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    A complete description for early resistance change and two dimensional simulation of mechanical stress evolution in confined Al interconnects, related to the electromigration, is given in this paper. The model, combines the stress/ vacancy concentration evolution with the early resistance change of the Al line, that could be [1] a fast technique for prediction of the MTF of a line compared to the conventional (accelerated) tests.
    Original languageUndefined
    Pages (from-to)1491-1494
    Number of pages4
    JournalMicroelectronics reliability
    Issue number37
    Publication statusPublished - 1997


    • METIS-112007
    • IR-15135

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