Effect of a niobium-doped PZT interfacial layer thickness on the properties of epitaxial PMN-PT thin films

M. Boota, E.P. Houwman*, G. Lanzara, G. Rijnders

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

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Abstract

We are reporting on high quality epitaxial thin films of [Pb(Mg1/3Nb2/3)O3]0.67-(PbTiO3)0.33 [PMN-PT (67/33)]. These films were deposited on (001) oriented, vicinal SrTiO3 single crystal substrates, using 1 mol. % niobium-doped Pb(Zr0.52,Ti0.48)O3 (Nb-PZT) as an interfacial layer. The functional properties of the epitaxial PMN-PT (67/33) thin films were investigated as a function of the layer thickness of the Nb-PZT layer. The deposited hetero-structures are perovskite phase pure and fully (001)-oriented. The variation in Nb-PZT interfacial layer thickness results in an increasing trend change of the in-plane lattice parameter of that layer, which in turn causes a decrease in the c/a ratio of the PMN-PT film on top. The most noticeable effect related to this is a decrease in built-in-bias (imprint) voltage. Thus, the built-in bias can be tuned by changing the interfacial layer thickness. The ferroelectric capacitor properties are found to be most stable for the thinnest interfacial layers under a high number (108) of switching cycles.
Original languageEnglish
Article number145302
Number of pages7
JournalJournal of Applied Physics
Volume133
Issue number14
Early online date10 Apr 2023
DOIs
Publication statusPublished - 14 Apr 2023

Keywords

  • UT-Hybrid-D

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