Effect of a thin (doped) PZT interfacial layer on the properties of epitaxial PMN-PT films

Muhammad Boota; Evert P. Houwman; Giulia Lanzara; Guus Rijnders

doi:10.1063/5.0004479

Effect of a thin (doped) PZT interfacial layer on the properties of epitaxial PMN-PT films

Muhammad Boota, Evert P. Houwman^*, Giulia Lanzara, Guus Rijnders

^*Corresponding author for this work

Inorganic Materials Science

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

Pure perovskite phase, (001)-oriented, epitaxial thin films of (Pb(Mg1/3Nb2/3)O3)0.67-(PbTiO3)0.33 (PMN-PT) were fabricated on single crystal, (001)-oriented SrTiO3 substrates using a hard (Fe-doped) and soft doped (Nb-doped) PZT(52/48) interfacial layer. The effect of different interface layers on the structural and ferroelectric properties of the PMN-PT films was investigated in detail. A significant self-bias voltage in the PMN-PT films can be introduced by using an appropriate interfacial layer. There are significant differences in polarization for different types of doped and undoped interface layers and a doubling of the relative dielectric constant was observed for the Nb-doped interfacial layer. Device properties remain stable up to at least 108 cycles.

Original language	English
Article number	055302
Journal	Journal of Applied Physics
Volume	128
Issue number	5
DOIs	https://doi.org/10.1063/5.0004479
Publication status	Published - 7 Aug 2020

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title = "Effect of a thin (doped) PZT interfacial layer on the properties of epitaxial PMN-PT films",

abstract = "Pure perovskite phase, (001)-oriented, epitaxial thin films of (Pb(Mg1/3Nb2/3)O3)0.67-(PbTiO3)0.33 (PMN-PT) were fabricated on single crystal, (001)-oriented SrTiO3 substrates using a hard (Fe-doped) and soft doped (Nb-doped) PZT(52/48) interfacial layer. The effect of different interface layers on the structural and ferroelectric properties of the PMN-PT films was investigated in detail. A significant self-bias voltage in the PMN-PT films can be introduced by using an appropriate interfacial layer. There are significant differences in polarization for different types of doped and undoped interface layers and a doubling of the relative dielectric constant was observed for the Nb-doped interfacial layer. Device properties remain stable up to at least 108 cycles. ",

author = "Muhammad Boota and Houwman, {Evert P.} and Giulia Lanzara and Guus Rijnders",

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AU - Boota, Muhammad

AU - Houwman, Evert P.

AU - Lanzara, Giulia

AU - Rijnders, Guus

PY - 2020/8/7

Y1 - 2020/8/7

N2 - Pure perovskite phase, (001)-oriented, epitaxial thin films of (Pb(Mg1/3Nb2/3)O3)0.67-(PbTiO3)0.33 (PMN-PT) were fabricated on single crystal, (001)-oriented SrTiO3 substrates using a hard (Fe-doped) and soft doped (Nb-doped) PZT(52/48) interfacial layer. The effect of different interface layers on the structural and ferroelectric properties of the PMN-PT films was investigated in detail. A significant self-bias voltage in the PMN-PT films can be introduced by using an appropriate interfacial layer. There are significant differences in polarization for different types of doped and undoped interface layers and a doubling of the relative dielectric constant was observed for the Nb-doped interfacial layer. Device properties remain stable up to at least 108 cycles.

AB - Pure perovskite phase, (001)-oriented, epitaxial thin films of (Pb(Mg1/3Nb2/3)O3)0.67-(PbTiO3)0.33 (PMN-PT) were fabricated on single crystal, (001)-oriented SrTiO3 substrates using a hard (Fe-doped) and soft doped (Nb-doped) PZT(52/48) interfacial layer. The effect of different interface layers on the structural and ferroelectric properties of the PMN-PT films was investigated in detail. A significant self-bias voltage in the PMN-PT films can be introduced by using an appropriate interfacial layer. There are significant differences in polarization for different types of doped and undoped interface layers and a doubling of the relative dielectric constant was observed for the Nb-doped interfacial layer. Device properties remain stable up to at least 108 cycles.

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Effect of a thin (doped) PZT interfacial layer on the properties of epitaxial PMN-PT films

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