Carrier confinement in a high quality silicon volume has been proven to be a requirement for efficient silicon LEDs. Carrier injectors that are able to supply electron-hole pairs to the emitting volume without participating any further to non-radiative recombination play a fundamental role in achieving such a confinement. In previous works this approach has been followed reducing the dimensions of the injectors to few nanometers, thus combining geometrical and potential energy barrier confinement effects for carriers. We investigated the geometrical effect separately simulating p+–p-–n+ diodes, varying the injector size from 10 nm to 1 μm.
|Title of host publication||Proceedings of the 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors|
|Place of Publication||Utrecht, The Netherlands|
|Number of pages||3|
|Publication status||Published - 26 Nov 2009|
|Event||12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2009 - Veldhoven, Netherlands|
Duration: 26 Nov 2009 → 27 Nov 2009
Conference number: 12
|Publisher||Technology Foundation STW|
|Conference||12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2009|
|Period||26/11/09 → 27/11/09|
- Carrier confinement
- SC-SBLE: Silicon-based Light Emitters
- Silicon LED
Piccolo, G., Kovalgin, A. Y., & Schmitz, J. (2009). Effect of carrier injector size on silicon LED performance. In Proceedings of the 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (pp. 167-169). Utrecht, The Netherlands: STW.