Effect of carrier injector size on silicon LED performance

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

    Abstract

    Carrier confinement in a high quality silicon volume has been proven to be a requirement for efficient silicon LEDs. Carrier injectors that are able to supply electron-hole pairs to the emitting volume without participating any further to non-radiative recombination play a fundamental role in achieving such a confinement. In previous works this approach has been followed reducing the dimensions of the injectors to few nanometers, thus combining geometrical and potential energy barrier confinement effects for carriers. We investigated the geometrical effect separately simulating p+–p-–n+ diodes, varying the injector size from 10 nm to 1 μm.
    Original languageUndefined
    Title of host publicationProceedings of the 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors
    Place of PublicationUtrecht, The Netherlands
    PublisherSTW
    Pages167-169
    Number of pages3
    ISBN (Print)978-90-73461-62-8
    Publication statusPublished - 26 Nov 2009
    Event12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2009 - Veldhoven, Netherlands
    Duration: 26 Nov 200927 Nov 2009
    Conference number: 12

    Publication series

    Name
    PublisherTechnology Foundation STW

    Conference

    Conference12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2009
    Abbreviated titleSAFE
    CountryNetherlands
    CityVeldhoven
    Period26/11/0927/11/09

    Keywords

    • METIS-264271
    • Carrier confinement
    • SC-SBLE: Silicon-based Light Emitters
    • Silicon LED
    • EWI-17065
    • IR-69056

    Cite this

    Piccolo, G., Kovalgin, A. Y., & Schmitz, J. (2009). Effect of carrier injector size on silicon LED performance. In Proceedings of the 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (pp. 167-169). Utrecht, The Netherlands: STW.
    Piccolo, G. ; Kovalgin, Alexeij Y. ; Schmitz, Jurriaan. / Effect of carrier injector size on silicon LED performance. Proceedings of the 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors. Utrecht, The Netherlands : STW, 2009. pp. 167-169
    @inproceedings{efc89570e1b24e2dadaf1613766b2985,
    title = "Effect of carrier injector size on silicon LED performance",
    abstract = "Carrier confinement in a high quality silicon volume has been proven to be a requirement for efficient silicon LEDs. Carrier injectors that are able to supply electron-hole pairs to the emitting volume without participating any further to non-radiative recombination play a fundamental role in achieving such a confinement. In previous works this approach has been followed reducing the dimensions of the injectors to few nanometers, thus combining geometrical and potential energy barrier confinement effects for carriers. We investigated the geometrical effect separately simulating p+–p-–n+ diodes, varying the injector size from 10 nm to 1 μm.",
    keywords = "METIS-264271, Carrier confinement, SC-SBLE: Silicon-based Light Emitters, Silicon LED, EWI-17065, IR-69056",
    author = "G. Piccolo and Kovalgin, {Alexeij Y.} and Jurriaan Schmitz",
    year = "2009",
    month = "11",
    day = "26",
    language = "Undefined",
    isbn = "978-90-73461-62-8",
    publisher = "STW",
    pages = "167--169",
    booktitle = "Proceedings of the 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors",

    }

    Piccolo, G, Kovalgin, AY & Schmitz, J 2009, Effect of carrier injector size on silicon LED performance. in Proceedings of the 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors. STW, Utrecht, The Netherlands, pp. 167-169, 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2009, Veldhoven, Netherlands, 26/11/09.

    Effect of carrier injector size on silicon LED performance. / Piccolo, G.; Kovalgin, Alexeij Y.; Schmitz, Jurriaan.

    Proceedings of the 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors. Utrecht, The Netherlands : STW, 2009. p. 167-169.

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

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    T1 - Effect of carrier injector size on silicon LED performance

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    AU - Kovalgin, Alexeij Y.

    AU - Schmitz, Jurriaan

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    Y1 - 2009/11/26

    N2 - Carrier confinement in a high quality silicon volume has been proven to be a requirement for efficient silicon LEDs. Carrier injectors that are able to supply electron-hole pairs to the emitting volume without participating any further to non-radiative recombination play a fundamental role in achieving such a confinement. In previous works this approach has been followed reducing the dimensions of the injectors to few nanometers, thus combining geometrical and potential energy barrier confinement effects for carriers. We investigated the geometrical effect separately simulating p+–p-–n+ diodes, varying the injector size from 10 nm to 1 μm.

    AB - Carrier confinement in a high quality silicon volume has been proven to be a requirement for efficient silicon LEDs. Carrier injectors that are able to supply electron-hole pairs to the emitting volume without participating any further to non-radiative recombination play a fundamental role in achieving such a confinement. In previous works this approach has been followed reducing the dimensions of the injectors to few nanometers, thus combining geometrical and potential energy barrier confinement effects for carriers. We investigated the geometrical effect separately simulating p+–p-–n+ diodes, varying the injector size from 10 nm to 1 μm.

    KW - METIS-264271

    KW - Carrier confinement

    KW - SC-SBLE: Silicon-based Light Emitters

    KW - Silicon LED

    KW - EWI-17065

    KW - IR-69056

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    Piccolo G, Kovalgin AY, Schmitz J. Effect of carrier injector size on silicon LED performance. In Proceedings of the 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors. Utrecht, The Netherlands: STW. 2009. p. 167-169