TY - JOUR
T1 - Effect of Coulomb correlation on charge transport in disordered organic semiconductors
AU - Liu, Feilong
AU - van Eersel, Harm
AU - Xu, Bojian
AU - Wilbers, Janine G.E.
AU - de Jong, Michel P.
AU - van der Wiel, Wilfred G.
AU - Bobbert, Peter A.
AU - Coehoorn, Reinder
PY - 2017/11/20
Y1 - 2017/11/20
N2 - Charge transport in disordered organic semiconductors, which is governed by incoherent hopping between localized molecular states, is frequently studied using a mean-field approach. However, such an approach only considers the time-averaged occupation of sites and neglects the correlation effect resulting from the Coulomb interaction between charge carriers. Here, we study the charge transport in unipolar organic devices using kinetic Monte Carlo simulations and show that the effect of Coulomb correlation is already important when the charge-carrier concentration is above 10-3 per molecular site and the electric field is smaller than 10 8 V/m. The mean-field approach is then no longer valid, and neglecting the effect can result in significant errors in device modeling. This finding is supported by experimental current density-voltage characteristics of ultrathin sandwich-type unipolar poly(3-hexylthiophene) (P3HT) devices, where high carrier concentrations are reached.
AB - Charge transport in disordered organic semiconductors, which is governed by incoherent hopping between localized molecular states, is frequently studied using a mean-field approach. However, such an approach only considers the time-averaged occupation of sites and neglects the correlation effect resulting from the Coulomb interaction between charge carriers. Here, we study the charge transport in unipolar organic devices using kinetic Monte Carlo simulations and show that the effect of Coulomb correlation is already important when the charge-carrier concentration is above 10-3 per molecular site and the electric field is smaller than 10 8 V/m. The mean-field approach is then no longer valid, and neglecting the effect can result in significant errors in device modeling. This finding is supported by experimental current density-voltage characteristics of ultrathin sandwich-type unipolar poly(3-hexylthiophene) (P3HT) devices, where high carrier concentrations are reached.
U2 - 10.1103/PhysRevB.96.205203
DO - 10.1103/PhysRevB.96.205203
M3 - Article
SN - 2469-9950
VL - 96
JO - Physical review B: Covering condensed matter and materials physics
JF - Physical review B: Covering condensed matter and materials physics
IS - 20
M1 - 205203
ER -