Effect of dopants on ferroelectric and piezoelectric properties of lead zirconate titanate thin films on Si substrates

Duc Minh Nguyen, Thong Q. Trinh, Jan M. Dekkers, Evert Pieter Houwman, Hung Ngoc Vu, Augustinus J.H.M. Rijnders

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Abstract

Lead zirconate titanate Pb(Zr0.52Ti0.48)O3 (undoped PZT) and doped PZT thin films with thickness of about 500 nm were grown on Pt/Ti/SiO2/Si substrates by pulsed laser deposition (PLD). In this study, 1.0 mol% Nb-doping (at Zr/Ti site) as donor, 1.0 mol% Fe-doping (at Zr/Ti) as acceptor and 10 mol% Ba-doping (at Pb site) as isovalence were used. The effects of the introduction of these dopants on the ferroelectric and piezoelectric properties were investigated and compared to the undoped PZT film. A noticeable improvement of the dielectric constant (ε) and effective piezoelectric coefficient (d33,f) are obtained. The maximum values of these parameters vary from 1280 and 126 pm/V for undoped PZT film to 1520 and 164 pm/V for Nb-doped PZT film. The largest remnant polarization (Pr) and coercive field (Ec) are obtained for Fe-doped PZT film, equal to 22.6 µC/cm2 and 35.3 kV/cm, as compared to 17.3 µC/cm2 and 31.2 kV/cm respectively for undoped PZT film. The Ba-doping decreases the dielectric constant but enhances the breakdown field of the film, reaching 800 kV/cm while it was only 660 kV/cm for undoped PZT film. The crystalline structure of Ba-doped film has a dominating (110) orientation instead of (100) in case of undoped, Nb-, and Fe-doped PZT films. The obtained results are important for the applications of doped PZT films in piezoMEMS devices.
Original languageEnglish
Pages (from-to)1013-1018
Number of pages6
JournalCeramics international
Volume40
Issue number1, pt. A
DOIs
Publication statusPublished - 2014

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Ferroelectric materials
Doping (additives)
Thin films
Substrates
Permittivity
Pulsed laser deposition
Polarization
Crystalline materials

Keywords

  • IR-90636
  • METIS-299938

Cite this

@article{76dee06c257943cf80202b410e3ed88c,
title = "Effect of dopants on ferroelectric and piezoelectric properties of lead zirconate titanate thin films on Si substrates",
abstract = "Lead zirconate titanate Pb(Zr0.52Ti0.48)O3 (undoped PZT) and doped PZT thin films with thickness of about 500 nm were grown on Pt/Ti/SiO2/Si substrates by pulsed laser deposition (PLD). In this study, 1.0 mol{\%} Nb-doping (at Zr/Ti site) as donor, 1.0 mol{\%} Fe-doping (at Zr/Ti) as acceptor and 10 mol{\%} Ba-doping (at Pb site) as isovalence were used. The effects of the introduction of these dopants on the ferroelectric and piezoelectric properties were investigated and compared to the undoped PZT film. A noticeable improvement of the dielectric constant (ε) and effective piezoelectric coefficient (d33,f) are obtained. The maximum values of these parameters vary from 1280 and 126 pm/V for undoped PZT film to 1520 and 164 pm/V for Nb-doped PZT film. The largest remnant polarization (Pr) and coercive field (Ec) are obtained for Fe-doped PZT film, equal to 22.6 µC/cm2 and 35.3 kV/cm, as compared to 17.3 µC/cm2 and 31.2 kV/cm respectively for undoped PZT film. The Ba-doping decreases the dielectric constant but enhances the breakdown field of the film, reaching 800 kV/cm while it was only 660 kV/cm for undoped PZT film. The crystalline structure of Ba-doped film has a dominating (110) orientation instead of (100) in case of undoped, Nb-, and Fe-doped PZT films. The obtained results are important for the applications of doped PZT films in piezoMEMS devices.",
keywords = "IR-90636, METIS-299938",
author = "Nguyen, {Duc Minh} and Trinh, {Thong Q.} and Dekkers, {Jan M.} and Houwman, {Evert Pieter} and Vu, {Hung Ngoc} and Rijnders, {Augustinus J.H.M.}",
year = "2014",
doi = "10.1016/j.ceramint.2013.06.098",
language = "English",
volume = "40",
pages = "1013--1018",
journal = "Ceramics international",
issn = "0272-8842",
publisher = "Elsevier",
number = "1, pt. A",

}

Effect of dopants on ferroelectric and piezoelectric properties of lead zirconate titanate thin films on Si substrates. / Nguyen, Duc Minh; Trinh, Thong Q.; Dekkers, Jan M.; Houwman, Evert Pieter; Vu, Hung Ngoc; Rijnders, Augustinus J.H.M.

In: Ceramics international, Vol. 40, No. 1, pt. A, 2014, p. 1013-1018.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Effect of dopants on ferroelectric and piezoelectric properties of lead zirconate titanate thin films on Si substrates

AU - Nguyen, Duc Minh

AU - Trinh, Thong Q.

AU - Dekkers, Jan M.

AU - Houwman, Evert Pieter

AU - Vu, Hung Ngoc

AU - Rijnders, Augustinus J.H.M.

PY - 2014

Y1 - 2014

N2 - Lead zirconate titanate Pb(Zr0.52Ti0.48)O3 (undoped PZT) and doped PZT thin films with thickness of about 500 nm were grown on Pt/Ti/SiO2/Si substrates by pulsed laser deposition (PLD). In this study, 1.0 mol% Nb-doping (at Zr/Ti site) as donor, 1.0 mol% Fe-doping (at Zr/Ti) as acceptor and 10 mol% Ba-doping (at Pb site) as isovalence were used. The effects of the introduction of these dopants on the ferroelectric and piezoelectric properties were investigated and compared to the undoped PZT film. A noticeable improvement of the dielectric constant (ε) and effective piezoelectric coefficient (d33,f) are obtained. The maximum values of these parameters vary from 1280 and 126 pm/V for undoped PZT film to 1520 and 164 pm/V for Nb-doped PZT film. The largest remnant polarization (Pr) and coercive field (Ec) are obtained for Fe-doped PZT film, equal to 22.6 µC/cm2 and 35.3 kV/cm, as compared to 17.3 µC/cm2 and 31.2 kV/cm respectively for undoped PZT film. The Ba-doping decreases the dielectric constant but enhances the breakdown field of the film, reaching 800 kV/cm while it was only 660 kV/cm for undoped PZT film. The crystalline structure of Ba-doped film has a dominating (110) orientation instead of (100) in case of undoped, Nb-, and Fe-doped PZT films. The obtained results are important for the applications of doped PZT films in piezoMEMS devices.

AB - Lead zirconate titanate Pb(Zr0.52Ti0.48)O3 (undoped PZT) and doped PZT thin films with thickness of about 500 nm were grown on Pt/Ti/SiO2/Si substrates by pulsed laser deposition (PLD). In this study, 1.0 mol% Nb-doping (at Zr/Ti site) as donor, 1.0 mol% Fe-doping (at Zr/Ti) as acceptor and 10 mol% Ba-doping (at Pb site) as isovalence were used. The effects of the introduction of these dopants on the ferroelectric and piezoelectric properties were investigated and compared to the undoped PZT film. A noticeable improvement of the dielectric constant (ε) and effective piezoelectric coefficient (d33,f) are obtained. The maximum values of these parameters vary from 1280 and 126 pm/V for undoped PZT film to 1520 and 164 pm/V for Nb-doped PZT film. The largest remnant polarization (Pr) and coercive field (Ec) are obtained for Fe-doped PZT film, equal to 22.6 µC/cm2 and 35.3 kV/cm, as compared to 17.3 µC/cm2 and 31.2 kV/cm respectively for undoped PZT film. The Ba-doping decreases the dielectric constant but enhances the breakdown field of the film, reaching 800 kV/cm while it was only 660 kV/cm for undoped PZT film. The crystalline structure of Ba-doped film has a dominating (110) orientation instead of (100) in case of undoped, Nb-, and Fe-doped PZT films. The obtained results are important for the applications of doped PZT films in piezoMEMS devices.

KW - IR-90636

KW - METIS-299938

U2 - 10.1016/j.ceramint.2013.06.098

DO - 10.1016/j.ceramint.2013.06.098

M3 - Article

VL - 40

SP - 1013

EP - 1018

JO - Ceramics international

JF - Ceramics international

SN - 0272-8842

IS - 1, pt. A

ER -