Effect of Gamma Irradiation on Dynamics of Charge Exchange Processes between Single Trap and Nanowire Channel

Ihor Zadorozhnyi; Jing Li; Sergii Pud; Hanna Hlukhova; Volodymyr Handziuk; Yurii Kutovyi; Mykhailo Petrychuk; Svetlana Vitusevich

doi:10.1002/smll.201702516

Effect of Gamma Irradiation on Dynamics of Charge Exchange Processes between Single Trap and Nanowire Channel

Ihor Zadorozhnyi, Jing Li, Sergii Pud, Hanna Hlukhova, Volodymyr Handziuk, Yurii Kutovyi, Mykhailo Petrychuk, Svetlana Vitusevich^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › Academic › peer-review

16 Citations (Scopus)

Abstract

In the present study, transport properties and single trap phenomena in silicon nanowire (NW) field-effect transistors (FETs) are reported. The dynamic behavior of drain current in NW FETs studied before and after gamma radiation treatment deviates from the predictions of the Shockley–Read–Hall model and is explained by the concept taking into account an additional energy barrier in the accumulation regime. It is revealed that dynamics of charge exchange processes between single trap and nanowire channel strongly depend on gamma radiation treatment. The results represent potential for utilizing single trap phenomena in a number of advanced devices.

Original language	English
Article number	1702516
Journal	Small
Volume	14
Issue number	2
DOIs	https://doi.org/10.1002/smll.201702516
Publication status	Published - 11 Jan 2018
Externally published	Yes

Keywords

dynamic processes
gamma irradiation
nanowires
single trap

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10.1002/smll.201702516

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abstract = "In the present study, transport properties and single trap phenomena in silicon nanowire (NW) field-effect transistors (FETs) are reported. The dynamic behavior of drain current in NW FETs studied before and after gamma radiation treatment deviates from the predictions of the Shockley–Read–Hall model and is explained by the concept taking into account an additional energy barrier in the accumulation regime. It is revealed that dynamics of charge exchange processes between single trap and nanowire channel strongly depend on gamma radiation treatment. The results represent potential for utilizing single trap phenomena in a number of advanced devices.",

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AU - Zadorozhnyi, Ihor

AU - Li, Jing

AU - Pud, Sergii

AU - Hlukhova, Hanna

AU - Handziuk, Volodymyr

AU - Kutovyi, Yurii

AU - Petrychuk, Mykhailo

AU - Vitusevich, Svetlana

PY - 2018/1/11

Y1 - 2018/1/11

N2 - In the present study, transport properties and single trap phenomena in silicon nanowire (NW) field-effect transistors (FETs) are reported. The dynamic behavior of drain current in NW FETs studied before and after gamma radiation treatment deviates from the predictions of the Shockley–Read–Hall model and is explained by the concept taking into account an additional energy barrier in the accumulation regime. It is revealed that dynamics of charge exchange processes between single trap and nanowire channel strongly depend on gamma radiation treatment. The results represent potential for utilizing single trap phenomena in a number of advanced devices.

AB - In the present study, transport properties and single trap phenomena in silicon nanowire (NW) field-effect transistors (FETs) are reported. The dynamic behavior of drain current in NW FETs studied before and after gamma radiation treatment deviates from the predictions of the Shockley–Read–Hall model and is explained by the concept taking into account an additional energy barrier in the accumulation regime. It is revealed that dynamics of charge exchange processes between single trap and nanowire channel strongly depend on gamma radiation treatment. The results represent potential for utilizing single trap phenomena in a number of advanced devices.

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Effect of Gamma Irradiation on Dynamics of Charge Exchange Processes between Single Trap and Nanowire Channel

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Keywords

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