Effect of Gamma Irradiation on Dynamics of Charge Exchange Processes between Single Trap and Nanowire Channel

Ihor Zadorozhnyi, Jing Li, Sergii Pud, Hanna Hlukhova, Volodymyr Handziuk, Yurii Kutovyi, Mykhailo Petrychuk, Svetlana Vitusevich*

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

12 Citations (Scopus)

Abstract

In the present study, transport properties and single trap phenomena in silicon nanowire (NW) field-effect transistors (FETs) are reported. The dynamic behavior of drain current in NW FETs studied before and after gamma radiation treatment deviates from the predictions of the Shockley–Read–Hall model and is explained by the concept taking into account an additional energy barrier in the accumulation regime. It is revealed that dynamics of charge exchange processes between single trap and nanowire channel strongly depend on gamma radiation treatment. The results represent potential for utilizing single trap phenomena in a number of advanced devices.

Original languageEnglish
Article number1702516
JournalSmall
Volume14
Issue number2
DOIs
Publication statusPublished - 11 Jan 2018
Externally publishedYes

Keywords

  • dynamic processes
  • gamma irradiation
  • nanowires
  • single trap

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