FePt thin films ~70 nm thick! have been prepared by dc sputtering under a variable Ar pressure (4x10-3-4x10-2 mb) and have been annealed at temperatures ranging from 300 to 400 °C. With increasing Ar pressure, the ordering process requires a lower annealing temperature. However, further increase of Ar pressure deteriorates the crystallinity of the film which hinders the transformation from fcc to fct structure. The structural analyses show a strong correlation between the ordering process and the microstructure.
- SMI-TST: From 2006 in EWI-TST
- SMI-MAT: MATERIALS