Effect of heating ramp rates on transient enhanced diffusion in ion-implemented silicon

G. Mannino, P.A. Stolk, N.E.B. Cowern, W. de Boer, A.G. Dirks, F. Roozeboom, J.G.M. van Berkum, P.H. Woerlee, N.N. Toan

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    Abstract

    Boron marker-layer structures have been used to analyze the heating ramp-rate dependence of transient enhanced dopant diffusion (TED) during rapid thermal annealing of Si implantation damage. The study uses short anneals with heating ramp rates in the range 0.1–350 °C/s, and peak temperatures in the range 900–1100 °C. Increasing the ramp rate is found to reduce the amount of profile broadening caused by TED, as well as reducing the smaller amount of normal "thermal-equilibrium" diffusion which is related to thermal budget. The results show why high ramp rates lead to improved B-implant activation and junction-depth control in Si devices. An Ostwald ripening model of interstitial-cluster evolution describes the detailed trends in the data and predicts further improvements in the case of ultrarapid annealing.
    Original languageUndefined
    Article number10.1063/1.1347397
    Pages (from-to)889-891
    Number of pages3
    JournalApplied physics letters
    Volume7
    Issue number78
    DOIs
    Publication statusPublished - 12 Feb 2001

    Keywords

    • METIS-201440
    • rapid thermal annealing
    • doping profiles
    • EWI-15621
    • impurity-defect interactions
    • boron
    • interstitials
    • Elemental semiconductors
    • Silicon
    • Diffusion
    • Ion implantation
    • IR-67776

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