Effect of heating ramp rates on transient enhanced diffusion in ion-implemented silicon

G. Mannino, P.A. Stolk, N.E.B. Cowern, W. de Boer, A.G. Dirks, F. Roozeboom, J.G.M. van Berkum, P.H. Woerlee, N.N. Toan

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    Abstract

    Boron marker-layer structures have been used to analyze the heating ramp-rate dependence of transient enhanced dopant diffusion (TED) during rapid thermal annealing of Si implantation damage. The study uses short anneals with heating ramp rates in the range 0.1–350 °C/s, and peak temperatures in the range 900–1100 °C. Increasing the ramp rate is found to reduce the amount of profile broadening caused by TED, as well as reducing the smaller amount of normal "thermal-equilibrium" diffusion which is related to thermal budget. The results show why high ramp rates lead to improved B-implant activation and junction-depth control in Si devices. An Ostwald ripening model of interstitial-cluster evolution describes the detailed trends in the data and predicts further improvements in the case of ultrarapid annealing.
    Original languageUndefined
    Article number10.1063/1.1347397
    Pages (from-to)889-891
    Number of pages3
    JournalApplied physics letters
    Volume7
    Issue number78
    DOIs
    Publication statusPublished - 12 Feb 2001

    Keywords

    • METIS-201440
    • rapid thermal annealing
    • doping profiles
    • EWI-15621
    • impurity-defect interactions
    • boron
    • interstitials
    • Elemental semiconductors
    • Silicon
    • Diffusion
    • Ion implantation
    • IR-67776

    Cite this

    Mannino, G., Stolk, P. A., Cowern, N. E. B., de Boer, W., Dirks, A. G., Roozeboom, F., ... Toan, N. N. (2001). Effect of heating ramp rates on transient enhanced diffusion in ion-implemented silicon. Applied physics letters, 7(78), 889-891. [10.1063/1.1347397]. https://doi.org/10.1063/1.1347397