Abstract
Boron marker-layer structures have been used to analyze the heating ramp-rate dependence of transient enhanced dopant diffusion (TED) during rapid thermal annealing of Si implantation damage. The study uses short anneals with heating ramp rates in the range 0.1–350 °C/s, and peak temperatures in the range 900–1100 °C. Increasing the ramp rate is found to reduce the amount of profile broadening caused by TED, as well as reducing the smaller amount of normal "thermal-equilibrium" diffusion which is related to thermal budget. The results show why high ramp rates lead to improved B-implant activation and junction-depth control in Si devices. An Ostwald ripening model of interstitial-cluster evolution describes the detailed trends in the data and predicts further improvements in the case of ultrarapid annealing.
Original language | Undefined |
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Article number | 10.1063/1.1347397 |
Pages (from-to) | 889-891 |
Number of pages | 3 |
Journal | Applied physics letters |
Volume | 7 |
Issue number | 78 |
DOIs | |
Publication status | Published - 12 Feb 2001 |
Keywords
- METIS-201440
- rapid thermal annealing
- doping profiles
- EWI-15621
- impurity-defect interactions
- boron
- interstitials
- Elemental semiconductors
- Silicon
- Diffusion
- Ion implantation
- IR-67776