Effect of heating ramp rates on transient enhanced diffusion in ion-implemented silicon

G. Mannino; P.A. Stolk; N.E.B. Cowern; W.B. de Boer; A.G. Dirks; F. Roozeboom; J.G.M. van Berkum; P.H. Woerlee; N.N. Toan

doi:10.1063/1.1347397

Effect of heating ramp rates on transient enhanced diffusion in ion-implemented silicon

G. Mannino, P.A. Stolk, N.E.B. Cowern, W.B. de Boer, A.G. Dirks, F. Roozeboom, J.G.M. van Berkum, P.H. Woerlee, N.N. Toan

Research output: Contribution to journal › Article › Academic › peer-review

26 Citations (Scopus)

Abstract

Boron marker-layer structures have been used to analyze the heating ramp-rate dependence of transient enhanced dopant diffusion (TED) during rapid thermal annealing of Si implantation damage. The study uses short anneals with heating ramp rates in the range 0.1–350 °C/s, and peak temperatures in the range 900–1100 °C. Increasing the ramp rate is found to reduce the amount of profile broadening caused by TED, as well as reducing the smaller amount of normal "thermal-equilibrium" diffusion which is related to thermal budget. The results show why high ramp rates lead to improved B-implant activation and junction-depth control in Si devices. An Ostwald ripening model of interstitial-cluster evolution describes the detailed trends in the data and predicts further improvements in the case of ultrarapid annealing.

Original language	English
Pages (from-to)	889-891
Number of pages	3
Journal	Applied physics letters
Volume	7
Issue number	78
DOIs	https://doi.org/10.1063/1.1347397
Publication status	Published - 12 Feb 2001

Keywords

Rapid thermal annealing
Doping profiles
Impurity-defect interactions
Boron (B)
Interstitials
Elemental semiconductors
Silicon
Diffusion
Ion implantation

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10.1063/1.1347397

Cite this

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title = "Effect of heating ramp rates on transient enhanced diffusion in ion-implemented silicon",

abstract = "Boron marker-layer structures have been used to analyze the heating ramp-rate dependence of transient enhanced dopant diffusion (TED) during rapid thermal annealing of Si implantation damage. The study uses short anneals with heating ramp rates in the range 0.1–350 °C/s, and peak temperatures in the range 900–1100 °C. Increasing the ramp rate is found to reduce the amount of profile broadening caused by TED, as well as reducing the smaller amount of normal {"}thermal-equilibrium{"} diffusion which is related to thermal budget. The results show why high ramp rates lead to improved B-implant activation and junction-depth control in Si devices. An Ostwald ripening model of interstitial-cluster evolution describes the detailed trends in the data and predicts further improvements in the case of ultrarapid annealing.",

keywords = "Rapid thermal annealing, Doping profiles, Impurity-defect interactions, Boron (B), Interstitials, Elemental semiconductors, Silicon, Diffusion, Ion implantation",

author = "G. Mannino and P.A. Stolk and N.E.B. Cowern and {de Boer}, W.B. and A.G. Dirks and F. Roozeboom and {van Berkum}, J.G.M. and P.H. Woerlee and N.N. Toan",

year = "2001",

month = feb,

day = "12",

doi = "10.1063/1.1347397",

language = "English",

volume = "7",

pages = "889--891",

journal = "Applied physics letters",

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publisher = "American Institute of Physics",

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TY - JOUR

T1 - Effect of heating ramp rates on transient enhanced diffusion in ion-implemented silicon

AU - Mannino, G.

AU - Stolk, P.A.

AU - Cowern, N.E.B.

AU - de Boer, W.B.

AU - Dirks, A.G.

AU - Roozeboom, F.

AU - van Berkum, J.G.M.

AU - Woerlee, P.H.

AU - Toan, N.N.

PY - 2001/2/12

Y1 - 2001/2/12

N2 - Boron marker-layer structures have been used to analyze the heating ramp-rate dependence of transient enhanced dopant diffusion (TED) during rapid thermal annealing of Si implantation damage. The study uses short anneals with heating ramp rates in the range 0.1–350 °C/s, and peak temperatures in the range 900–1100 °C. Increasing the ramp rate is found to reduce the amount of profile broadening caused by TED, as well as reducing the smaller amount of normal "thermal-equilibrium" diffusion which is related to thermal budget. The results show why high ramp rates lead to improved B-implant activation and junction-depth control in Si devices. An Ostwald ripening model of interstitial-cluster evolution describes the detailed trends in the data and predicts further improvements in the case of ultrarapid annealing.

AB - Boron marker-layer structures have been used to analyze the heating ramp-rate dependence of transient enhanced dopant diffusion (TED) during rapid thermal annealing of Si implantation damage. The study uses short anneals with heating ramp rates in the range 0.1–350 °C/s, and peak temperatures in the range 900–1100 °C. Increasing the ramp rate is found to reduce the amount of profile broadening caused by TED, as well as reducing the smaller amount of normal "thermal-equilibrium" diffusion which is related to thermal budget. The results show why high ramp rates lead to improved B-implant activation and junction-depth control in Si devices. An Ostwald ripening model of interstitial-cluster evolution describes the detailed trends in the data and predicts further improvements in the case of ultrarapid annealing.

KW - Rapid thermal annealing

KW - Doping profiles

KW - Impurity-defect interactions

KW - Boron (B)

KW - Interstitials

KW - Elemental semiconductors

KW - Silicon

KW - Diffusion

KW - Ion implantation

U2 - 10.1063/1.1347397

DO - 10.1063/1.1347397

M3 - Article

SN - 0003-6951

VL - 7

SP - 889

EP - 891

JO - Applied physics letters

JF - Applied physics letters

IS - 78

ER -

Effect of heating ramp rates on transient enhanced diffusion in ion-implemented silicon

Abstract

Keywords

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