Effect of heating ramp rates on transient enhanced diffusion in ion-implemented silicon

G. Mannino; P.A. Stolk; N.E.B. Cowern; W. de Boer; A.G. Dirks; F. Roozeboom; J.G.M. van Berkum; P.H. Woerlee; N.N. Toan

doi:10.1063/1.1347397

Effect of heating ramp rates on transient enhanced diffusion in ion-implemented silicon

G. Mannino, P.A. Stolk, N.E.B. Cowern, W. de Boer, A.G. Dirks, F. Roozeboom, J.G.M. van Berkum, P.H. Woerlee, N.N. Toan

Research output: Contribution to journal › Article › Academic › peer-review

25 Citations (Scopus)

Abstract

Boron marker-layer structures have been used to analyze the heating ramp-rate dependence of transient enhanced dopant diffusion (TED) during rapid thermal annealing of Si implantation damage. The study uses short anneals with heating ramp rates in the range 0.1–350 °C/s, and peak temperatures in the range 900–1100 °C. Increasing the ramp rate is found to reduce the amount of profile broadening caused by TED, as well as reducing the smaller amount of normal "thermal-equilibrium" diffusion which is related to thermal budget. The results show why high ramp rates lead to improved B-implant activation and junction-depth control in Si devices. An Ostwald ripening model of interstitial-cluster evolution describes the detailed trends in the data and predicts further improvements in the case of ultrarapid annealing.

Original language	Undefined
Article number	10.1063/1.1347397
Pages (from-to)	889-891
Number of pages	3
Journal	Applied physics letters
Volume	7
Issue number	78
DOIs	https://doi.org/10.1063/1.1347397
Publication status	Published - 12 Feb 2001

Keywords

METIS-201440
rapid thermal annealing
doping profiles
EWI-15621
impurity-defect interactions
boron
interstitials
Elemental semiconductors
Silicon
Diffusion
Ion implantation
IR-67776

Access to Document

10.1063/1.1347397

http://eprints.eemcs.utwente.nl/secure2/15621/01/mannino_apl.pdf

Cite this

Mannino, G., Stolk, P. A., Cowern, N. E. B., de Boer, W., Dirks, A. G., Roozeboom, F., ... Toan, N. N. (2001). Effect of heating ramp rates on transient enhanced diffusion in ion-implemented silicon. Applied physics letters, 7(78), 889-891. [10.1063/1.1347397]. https://doi.org/10.1063/1.1347397

@article{7398ab79860b41968f960566f421d558,

title = "Effect of heating ramp rates on transient enhanced diffusion in ion-implemented silicon",

abstract = "Boron marker-layer structures have been used to analyze the heating ramp-rate dependence of transient enhanced dopant diffusion (TED) during rapid thermal annealing of Si implantation damage. The study uses short anneals with heating ramp rates in the range 0.1–350 °C/s, and peak temperatures in the range 900–1100 °C. Increasing the ramp rate is found to reduce the amount of profile broadening caused by TED, as well as reducing the smaller amount of normal {"}thermal-equilibrium{"} diffusion which is related to thermal budget. The results show why high ramp rates lead to improved B-implant activation and junction-depth control in Si devices. An Ostwald ripening model of interstitial-cluster evolution describes the detailed trends in the data and predicts further improvements in the case of ultrarapid annealing.",

keywords = "METIS-201440, rapid thermal annealing, doping profiles, EWI-15621, impurity-defect interactions, boron, interstitials, Elemental semiconductors, Silicon, Diffusion, Ion implantation, IR-67776",

author = "G. Mannino and P.A. Stolk and N.E.B. Cowern and {de Boer}, W. and A.G. Dirks and F. Roozeboom and {van Berkum}, J.G.M. and P.H. Woerlee and N.N. Toan",

note = "eemcs-eprint-15621",

year = "2001",

month = "2",

day = "12",

doi = "10.1063/1.1347397",

language = "Undefined",

volume = "7",

pages = "889--891",

journal = "Applied physics letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "78",

}

Effect of heating ramp rates on transient enhanced diffusion in ion-implemented silicon. / Mannino, G.; Stolk, P.A.; Cowern, N.E.B.; de Boer, W.; Dirks, A.G.; Roozeboom, F.; van Berkum, J.G.M.; Woerlee, P.H.; Toan, N.N.

In: Applied physics letters, Vol. 7, No. 78, 10.1063/1.1347397, 12.02.2001, p. 889-891.

Research output: Contribution to journal › Article › Academic › peer-review

TY - JOUR

T1 - Effect of heating ramp rates on transient enhanced diffusion in ion-implemented silicon

AU - Mannino, G.

AU - Stolk, P.A.

AU - Cowern, N.E.B.

AU - de Boer, W.

AU - Dirks, A.G.

AU - Roozeboom, F.

AU - van Berkum, J.G.M.

AU - Woerlee, P.H.

AU - Toan, N.N.

N1 - eemcs-eprint-15621

PY - 2001/2/12

Y1 - 2001/2/12

N2 - Boron marker-layer structures have been used to analyze the heating ramp-rate dependence of transient enhanced dopant diffusion (TED) during rapid thermal annealing of Si implantation damage. The study uses short anneals with heating ramp rates in the range 0.1–350 °C/s, and peak temperatures in the range 900–1100 °C. Increasing the ramp rate is found to reduce the amount of profile broadening caused by TED, as well as reducing the smaller amount of normal "thermal-equilibrium" diffusion which is related to thermal budget. The results show why high ramp rates lead to improved B-implant activation and junction-depth control in Si devices. An Ostwald ripening model of interstitial-cluster evolution describes the detailed trends in the data and predicts further improvements in the case of ultrarapid annealing.

AB - Boron marker-layer structures have been used to analyze the heating ramp-rate dependence of transient enhanced dopant diffusion (TED) during rapid thermal annealing of Si implantation damage. The study uses short anneals with heating ramp rates in the range 0.1–350 °C/s, and peak temperatures in the range 900–1100 °C. Increasing the ramp rate is found to reduce the amount of profile broadening caused by TED, as well as reducing the smaller amount of normal "thermal-equilibrium" diffusion which is related to thermal budget. The results show why high ramp rates lead to improved B-implant activation and junction-depth control in Si devices. An Ostwald ripening model of interstitial-cluster evolution describes the detailed trends in the data and predicts further improvements in the case of ultrarapid annealing.

KW - METIS-201440

KW - rapid thermal annealing

KW - doping profiles

KW - EWI-15621

KW - impurity-defect interactions

KW - boron

KW - interstitials

KW - Elemental semiconductors

KW - Silicon

KW - Diffusion

KW - Ion implantation

KW - IR-67776

U2 - 10.1063/1.1347397

DO - 10.1063/1.1347397

M3 - Article

VL - 7

SP - 889

EP - 891

JO - Applied physics letters

JF - Applied physics letters

SN - 0003-6951

IS - 78

M1 - 10.1063/1.1347397

ER -