Effect of heating ramp rates on transient enhanced diffusion in ion-implemented silicon

G. Mannino; P.A. Stolk; N.E.B. Cowern; W. de Boer; A.G. Dirks; F. Roozeboom; J.G.M. van Berkum; P.H. Woerlee; N.N. Toan

doi:10.1063/1.1347397

Effect of heating ramp rates on transient enhanced diffusion in ion-implemented silicon

G. Mannino, P.A. Stolk, N.E.B. Cowern, W. de Boer, A.G. Dirks, F. Roozeboom, J.G.M. van Berkum, P.H. Woerlee, N.N. Toan

Research output: Contribution to journal › Article › Academic › peer-review

26 Citations (Scopus)

Abstract

Boron marker-layer structures have been used to analyze the heating ramp-rate dependence of transient enhanced dopant diffusion (TED) during rapid thermal annealing of Si implantation damage. The study uses short anneals with heating ramp rates in the range 0.1–350 °C/s, and peak temperatures in the range 900–1100 °C. Increasing the ramp rate is found to reduce the amount of profile broadening caused by TED, as well as reducing the smaller amount of normal "thermal-equilibrium" diffusion which is related to thermal budget. The results show why high ramp rates lead to improved B-implant activation and junction-depth control in Si devices. An Ostwald ripening model of interstitial-cluster evolution describes the detailed trends in the data and predicts further improvements in the case of ultrarapid annealing.

Original language	Undefined
Article number	10.1063/1.1347397
Pages (from-to)	889-891
Number of pages	3
Journal	Applied physics letters
Volume	7
Issue number	78
DOIs	https://doi.org/10.1063/1.1347397
Publication status	Published - 12 Feb 2001

Keywords

METIS-201440
rapid thermal annealing
doping profiles
EWI-15621
impurity-defect interactions
boron
interstitials
Elemental semiconductors
Silicon
Diffusion
Ion implantation
IR-67776

Access to Document

10.1063/1.1347397

http://eprints.eemcs.utwente.nl/secure2/15621/01/mannino_apl.pdf

Cite this

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title = "Effect of heating ramp rates on transient enhanced diffusion in ion-implemented silicon",

abstract = "Boron marker-layer structures have been used to analyze the heating ramp-rate dependence of transient enhanced dopant diffusion (TED) during rapid thermal annealing of Si implantation damage. The study uses short anneals with heating ramp rates in the range 0.1–350 °C/s, and peak temperatures in the range 900–1100 °C. Increasing the ramp rate is found to reduce the amount of profile broadening caused by TED, as well as reducing the smaller amount of normal {"}thermal-equilibrium{"} diffusion which is related to thermal budget. The results show why high ramp rates lead to improved B-implant activation and junction-depth control in Si devices. An Ostwald ripening model of interstitial-cluster evolution describes the detailed trends in the data and predicts further improvements in the case of ultrarapid annealing.",

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Effect of heating ramp rates on transient enhanced diffusion in ion-implemented silicon. / Mannino, G.; Stolk, P.A.; Cowern, N.E.B.; de Boer, W.; Dirks, A.G.; Roozeboom, F.; van Berkum, J.G.M.; Woerlee, P.H.; Toan, N.N.

In: Applied physics letters, Vol. 7, No. 78, 10.1063/1.1347397, 12.02.2001, p. 889-891.

Research output: Contribution to journal › Article › Academic › peer-review

TY - JOUR

T1 - Effect of heating ramp rates on transient enhanced diffusion in ion-implemented silicon

AU - Mannino, G.

AU - Stolk, P.A.

AU - Cowern, N.E.B.

AU - de Boer, W.

AU - Dirks, A.G.

AU - Roozeboom, F.

AU - van Berkum, J.G.M.

AU - Woerlee, P.H.

AU - Toan, N.N.

N1 - eemcs-eprint-15621

PY - 2001/2/12

Y1 - 2001/2/12

N2 - Boron marker-layer structures have been used to analyze the heating ramp-rate dependence of transient enhanced dopant diffusion (TED) during rapid thermal annealing of Si implantation damage. The study uses short anneals with heating ramp rates in the range 0.1–350 °C/s, and peak temperatures in the range 900–1100 °C. Increasing the ramp rate is found to reduce the amount of profile broadening caused by TED, as well as reducing the smaller amount of normal "thermal-equilibrium" diffusion which is related to thermal budget. The results show why high ramp rates lead to improved B-implant activation and junction-depth control in Si devices. An Ostwald ripening model of interstitial-cluster evolution describes the detailed trends in the data and predicts further improvements in the case of ultrarapid annealing.

AB - Boron marker-layer structures have been used to analyze the heating ramp-rate dependence of transient enhanced dopant diffusion (TED) during rapid thermal annealing of Si implantation damage. The study uses short anneals with heating ramp rates in the range 0.1–350 °C/s, and peak temperatures in the range 900–1100 °C. Increasing the ramp rate is found to reduce the amount of profile broadening caused by TED, as well as reducing the smaller amount of normal "thermal-equilibrium" diffusion which is related to thermal budget. The results show why high ramp rates lead to improved B-implant activation and junction-depth control in Si devices. An Ostwald ripening model of interstitial-cluster evolution describes the detailed trends in the data and predicts further improvements in the case of ultrarapid annealing.

KW - METIS-201440

KW - rapid thermal annealing

KW - doping profiles

KW - EWI-15621

KW - impurity-defect interactions

KW - boron

KW - interstitials

KW - Elemental semiconductors

KW - Silicon

KW - Diffusion

KW - Ion implantation

KW - IR-67776

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