Effect of high oxygen pressure annealing on superconducting Nd 1.85Ce0.15CuO4 thin films by pulsed laser deposition from Cu-enriched targets

M. Hoek*, F. Coneri, D. P. Leusink, P. D. Eerkes, X. Renshaw Wang, H. Hilgenkamp

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

3 Citations (Scopus)
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Abstract

We show that the quality of Nd1.85Ce0.15CuO 4 films grown by pulsed laser deposition can be enhanced by using a non-stoichiometric target with extra copper added to suppress the formation of a parasitic (Nd, Ce)2O3phase. The properties of these films are less dependent on the exact annealing procedure after deposition as compared to films grown from a stoichiometric target. Film growth can be followed by a 1 bar oxygen annealing, after an initial vacuum annealing, while retaining the superconducting properties and quality. This enables the integration of electron-doped cuprates with their hole-doped counterparts on a single chip, to create, for example, superconducting pn-junctions.

Original languageEnglish
Article number044017
JournalSuperconductor science and technology
Volume27
Issue number4
DOIs
Publication statusPublished - 1 Jan 2014

Keywords

  • cuprate superconductors
  • electron doped
  • material synthesis
  • thin films
  • transport properties

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