Effect of high oxygen pressure annealing on superconducting Nd 1.85Ce0.15CuO4 thin films by pulsed laser deposition from Cu-enriched targets

M. Hoek*, F. Coneri, D. P. Leusink, P. D. Eerkes, X. Renshaw Wang, H. Hilgenkamp

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

3 Citations (Scopus)
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Abstract

We show that the quality of Nd1.85Ce0.15CuO 4 films grown by pulsed laser deposition can be enhanced by using a non-stoichiometric target with extra copper added to suppress the formation of a parasitic (Nd, Ce)2O3phase. The properties of these films are less dependent on the exact annealing procedure after deposition as compared to films grown from a stoichiometric target. Film growth can be followed by a 1 bar oxygen annealing, after an initial vacuum annealing, while retaining the superconducting properties and quality. This enables the integration of electron-doped cuprates with their hole-doped counterparts on a single chip, to create, for example, superconducting pn-junctions.

Original languageEnglish
Article number044017
JournalSuperconductor science and technology
Volume27
Issue number4
DOIs
Publication statusPublished - 1 Jan 2014

Fingerprint

high pressure oxygen
Pulsed laser deposition
pulsed laser deposition
Annealing
Oxygen
Thin films
annealing
thin films
Film growth
Copper
retaining
Vacuum
cuprates
Electrons
chips
copper
vacuum
oxygen
electrons

Keywords

  • cuprate superconductors
  • electron doped
  • material synthesis
  • thin films
  • transport properties

Cite this

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title = "Effect of high oxygen pressure annealing on superconducting Nd 1.85Ce0.15CuO4 thin films by pulsed laser deposition from Cu-enriched targets",
abstract = "We show that the quality of Nd1.85Ce0.15CuO 4 films grown by pulsed laser deposition can be enhanced by using a non-stoichiometric target with extra copper added to suppress the formation of a parasitic (Nd, Ce)2O3phase. The properties of these films are less dependent on the exact annealing procedure after deposition as compared to films grown from a stoichiometric target. Film growth can be followed by a 1 bar oxygen annealing, after an initial vacuum annealing, while retaining the superconducting properties and quality. This enables the integration of electron-doped cuprates with their hole-doped counterparts on a single chip, to create, for example, superconducting pn-junctions.",
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Effect of high oxygen pressure annealing on superconducting Nd 1.85Ce0.15CuO4 thin films by pulsed laser deposition from Cu-enriched targets. / Hoek, M.; Coneri, F.; Leusink, D. P.; Eerkes, P. D.; Wang, X. Renshaw; Hilgenkamp, H.

In: Superconductor science and technology, Vol. 27, No. 4, 044017, 01.01.2014.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Effect of high oxygen pressure annealing on superconducting Nd 1.85Ce0.15CuO4 thin films by pulsed laser deposition from Cu-enriched targets

AU - Hoek, M.

AU - Coneri, F.

AU - Leusink, D. P.

AU - Eerkes, P. D.

AU - Wang, X. Renshaw

AU - Hilgenkamp, H.

PY - 2014/1/1

Y1 - 2014/1/1

N2 - We show that the quality of Nd1.85Ce0.15CuO 4 films grown by pulsed laser deposition can be enhanced by using a non-stoichiometric target with extra copper added to suppress the formation of a parasitic (Nd, Ce)2O3phase. The properties of these films are less dependent on the exact annealing procedure after deposition as compared to films grown from a stoichiometric target. Film growth can be followed by a 1 bar oxygen annealing, after an initial vacuum annealing, while retaining the superconducting properties and quality. This enables the integration of electron-doped cuprates with their hole-doped counterparts on a single chip, to create, for example, superconducting pn-junctions.

AB - We show that the quality of Nd1.85Ce0.15CuO 4 films grown by pulsed laser deposition can be enhanced by using a non-stoichiometric target with extra copper added to suppress the formation of a parasitic (Nd, Ce)2O3phase. The properties of these films are less dependent on the exact annealing procedure after deposition as compared to films grown from a stoichiometric target. Film growth can be followed by a 1 bar oxygen annealing, after an initial vacuum annealing, while retaining the superconducting properties and quality. This enables the integration of electron-doped cuprates with their hole-doped counterparts on a single chip, to create, for example, superconducting pn-junctions.

KW - cuprate superconductors

KW - electron doped

KW - material synthesis

KW - thin films

KW - transport properties

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DO - 10.1088/0953-2048/27/4/044017

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