Effect of high oxygen pressure annealing on superconducting Nd 1.85Ce0.15CuO4 thin films by pulsed laser deposition from Cu-enriched targets

M. Hoek; F. Coneri; D.P. Leusink; P.D. Eerkes; X. Renshaw Wang; H. Hilgenkamp

doi:10.1088/0953-2048/27/4/044017

Effect of high oxygen pressure annealing on superconducting Nd _1.85Ce_0.15CuO₄ thin films by pulsed laser deposition from Cu-enriched targets

M. Hoek^*, F. Coneri, D.P. Leusink, P.D. Eerkes, X. Renshaw Wang, H. Hilgenkamp

^*Corresponding author for this work

Interfaces and Correlated Electron Systems

Research output: Contribution to journal › Article › Academic › peer-review

6 Citations (Scopus)

89 Downloads (Pure)

Abstract

We show that the quality of Nd_1.85Ce_0.15CuO ₄ films grown by pulsed laser deposition can be enhanced by using a non-stoichiometric target with extra copper added to suppress the formation of a parasitic (Nd, Ce)₂O₃phase. The properties of these films are less dependent on the exact annealing procedure after deposition as compared to films grown from a stoichiometric target. Film growth can be followed by a 1 bar oxygen annealing, after an initial vacuum annealing, while retaining the superconducting properties and quality. This enables the integration of electron-doped cuprates with their hole-doped counterparts on a single chip, to create, for example, superconducting pn-junctions.

Original language	English
Article number	044017
Journal	Superconductor science and technology
Volume	27
Issue number	4
DOIs	https://doi.org/10.1088/0953-2048/27/4/044017
Publication status	Published - 1 Jan 2014

Keywords

cuprate superconductors
electron doped
material synthesis
thin films
transport properties

Access to Document

10.1088/0953-2048/27/4/044017

ArticleAccepted author version, 918 KBLicence: CC BY-NC-ND

Cite this

@article{c85bc1533ade486b8eadbf6110c23545,

title = "Effect of high oxygen pressure annealing on superconducting Nd 1.85Ce0.15CuO4 thin films by pulsed laser deposition from Cu-enriched targets",

abstract = "We show that the quality of Nd1.85Ce0.15CuO 4 films grown by pulsed laser deposition can be enhanced by using a non-stoichiometric target with extra copper added to suppress the formation of a parasitic (Nd, Ce)2O3phase. The properties of these films are less dependent on the exact annealing procedure after deposition as compared to films grown from a stoichiometric target. Film growth can be followed by a 1 bar oxygen annealing, after an initial vacuum annealing, while retaining the superconducting properties and quality. This enables the integration of electron-doped cuprates with their hole-doped counterparts on a single chip, to create, for example, superconducting pn-junctions.",

keywords = "cuprate superconductors, electron doped, material synthesis, thin films, transport properties",

author = "M. Hoek and F. Coneri and D.P. Leusink and P.D. Eerkes and {Renshaw Wang}, X. and H. Hilgenkamp",

year = "2014",

month = jan,

day = "1",

doi = "10.1088/0953-2048/27/4/044017",

language = "English",

volume = "27",

journal = "Superconductor science and technology",

issn = "0953-2048",

publisher = "Institute of Physics (IOP)",

number = "4",

}

TY - JOUR

T1 - Effect of high oxygen pressure annealing on superconducting Nd 1.85Ce0.15CuO4 thin films by pulsed laser deposition from Cu-enriched targets

AU - Hoek, M.

AU - Coneri, F.

AU - Leusink, D.P.

AU - Eerkes, P.D.

AU - Renshaw Wang, X.

AU - Hilgenkamp, H.

PY - 2014/1/1

Y1 - 2014/1/1

N2 - We show that the quality of Nd1.85Ce0.15CuO 4 films grown by pulsed laser deposition can be enhanced by using a non-stoichiometric target with extra copper added to suppress the formation of a parasitic (Nd, Ce)2O3phase. The properties of these films are less dependent on the exact annealing procedure after deposition as compared to films grown from a stoichiometric target. Film growth can be followed by a 1 bar oxygen annealing, after an initial vacuum annealing, while retaining the superconducting properties and quality. This enables the integration of electron-doped cuprates with their hole-doped counterparts on a single chip, to create, for example, superconducting pn-junctions.

AB - We show that the quality of Nd1.85Ce0.15CuO 4 films grown by pulsed laser deposition can be enhanced by using a non-stoichiometric target with extra copper added to suppress the formation of a parasitic (Nd, Ce)2O3phase. The properties of these films are less dependent on the exact annealing procedure after deposition as compared to films grown from a stoichiometric target. Film growth can be followed by a 1 bar oxygen annealing, after an initial vacuum annealing, while retaining the superconducting properties and quality. This enables the integration of electron-doped cuprates with their hole-doped counterparts on a single chip, to create, for example, superconducting pn-junctions.

KW - cuprate superconductors

KW - electron doped

KW - material synthesis

KW - thin films

KW - transport properties

UR - http://www.scopus.com/inward/record.url?scp=84896981422&partnerID=8YFLogxK

U2 - 10.1088/0953-2048/27/4/044017

DO - 10.1088/0953-2048/27/4/044017

M3 - Article

AN - SCOPUS:84896981422

SN - 0953-2048

VL - 27

JO - Superconductor science and technology

JF - Superconductor science and technology

IS - 4

M1 - 044017

ER -

Effect of high oxygen pressure annealing on superconducting Nd _1.85Ce_0.15CuO₄ thin films by pulsed laser deposition from Cu-enriched targets

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this