Effect of interfacial scattering on the magnetoresistance of magnetic tunnel junctions

A. Vedyayev; N. Ryzhanova; R. Vlutters; B. Dieny

doi:10.1209/epl/i1999-00336-3

Effect of interfacial scattering on the magnetoresistance of magnetic tunnel junctions

A. Vedyayev, N. Ryzhanova, R. Vlutters, B. Dieny

Research output: Contribution to journal › Article › Academic › peer-review

10 Citations (Scopus)

1 Downloads (Pure)

Abstract

In theories of electron tunneling between metallic layers, one fundamental question remains: which is the relevant density of states which determines the tunnel current through the barrier? In this letter, the influence of electron scattering at the metal/oxide interface in magnetic tunnel junctions on the tunnel current is addressed from a theoretical point of view. Two contributions to the tunnel current and to the magnetoresistance of these junctions are obtained: one from specular transmission through the barrier which is related to the one-dimensional density of states next to the metal/oxide interface, the other from tunneling assisted by interfacial scattering which depends both on the one-dimensional and three-dimensional density of states. The effect of spin-flip scattering on the impurities is discussed as well.

Original language	Undefined
Pages (from-to)	808-814
Number of pages	7
Journal	Europhysics letters
Volume	46
Issue number	6
DOIs	https://doi.org/10.1209/epl/i1999-00336-3
Publication status	Published - 1999

Keywords

METIS-111923
IR-61307
EWI-5654
SMI-SPINTRONICS
SMI-NE: From 2006 in EWI-NE

Access to Document

10.1209/epl/i1999-00336-3

http://eprints.eemcs.utwente.nl/secure2/5654/01/VEDYAYEV1999.PDF

Cite this

@article{e1075e8d0634464f86a52c4dd380559e,

title = "Effect of interfacial scattering on the magnetoresistance of magnetic tunnel junctions",

abstract = "In theories of electron tunneling between metallic layers, one fundamental question remains: which is the relevant density of states which determines the tunnel current through the barrier? In this letter, the influence of electron scattering at the metal/oxide interface in magnetic tunnel junctions on the tunnel current is addressed from a theoretical point of view. Two contributions to the tunnel current and to the magnetoresistance of these junctions are obtained: one from specular transmission through the barrier which is related to the one-dimensional density of states next to the metal/oxide interface, the other from tunneling assisted by interfacial scattering which depends both on the one-dimensional and three-dimensional density of states. The effect of spin-flip scattering on the impurities is discussed as well.",

keywords = "METIS-111923, IR-61307, EWI-5654, SMI-SPINTRONICS, SMI-NE: From 2006 in EWI-NE",

author = "A. Vedyayev and N. Ryzhanova and R. Vlutters and B. Dieny",

note = "Imported from SMI Reference manager",

year = "1999",

doi = "10.1209/epl/i1999-00336-3",

language = "Undefined",

volume = "46",

pages = "808--814",

journal = "Europhysics letters",

issn = "0295-5075",

publisher = "Institute of Physics (IOP)",

number = "6",

}

TY - JOUR

T1 - Effect of interfacial scattering on the magnetoresistance of magnetic tunnel junctions

AU - Vedyayev, A.

AU - Ryzhanova, N.

AU - Vlutters, R.

AU - Dieny, B.

N1 - Imported from SMI Reference manager

PY - 1999

Y1 - 1999

N2 - In theories of electron tunneling between metallic layers, one fundamental question remains: which is the relevant density of states which determines the tunnel current through the barrier? In this letter, the influence of electron scattering at the metal/oxide interface in magnetic tunnel junctions on the tunnel current is addressed from a theoretical point of view. Two contributions to the tunnel current and to the magnetoresistance of these junctions are obtained: one from specular transmission through the barrier which is related to the one-dimensional density of states next to the metal/oxide interface, the other from tunneling assisted by interfacial scattering which depends both on the one-dimensional and three-dimensional density of states. The effect of spin-flip scattering on the impurities is discussed as well.

AB - In theories of electron tunneling between metallic layers, one fundamental question remains: which is the relevant density of states which determines the tunnel current through the barrier? In this letter, the influence of electron scattering at the metal/oxide interface in magnetic tunnel junctions on the tunnel current is addressed from a theoretical point of view. Two contributions to the tunnel current and to the magnetoresistance of these junctions are obtained: one from specular transmission through the barrier which is related to the one-dimensional density of states next to the metal/oxide interface, the other from tunneling assisted by interfacial scattering which depends both on the one-dimensional and three-dimensional density of states. The effect of spin-flip scattering on the impurities is discussed as well.

KW - METIS-111923

KW - IR-61307

KW - EWI-5654

KW - SMI-SPINTRONICS

KW - SMI-NE: From 2006 in EWI-NE

U2 - 10.1209/epl/i1999-00336-3

DO - 10.1209/epl/i1999-00336-3

M3 - Article

SN - 0295-5075

VL - 46

SP - 808

EP - 814

JO - Europhysics letters

JF - Europhysics letters

IS - 6

ER -