Effect of interfacial scattering on the magnetoresistance of magnetic tunnel junctions

A. Vedyayev, N. Ryzhanova, R. Vlutters, B. Dieny

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    10 Citations (Scopus)

    Abstract

    In theories of electron tunneling between metallic layers, one fundamental question remains: which is the relevant density of states which determines the tunnel current through the barrier? In this letter, the influence of electron scattering at the metal/oxide interface in magnetic tunnel junctions on the tunnel current is addressed from a theoretical point of view. Two contributions to the tunnel current and to the magnetoresistance of these junctions are obtained: one from specular transmission through the barrier which is related to the one-dimensional density of states next to the metal/oxide interface, the other from tunneling assisted by interfacial scattering which depends both on the one-dimensional and three-dimensional density of states. The effect of spin-flip scattering on the impurities is discussed as well.
    Original languageUndefined
    Pages (from-to)808-814
    Number of pages7
    JournalEurophysics letters
    Volume46
    Issue number6
    DOIs
    Publication statusPublished - 1999

    Keywords

    • METIS-111923
    • IR-61307
    • EWI-5654
    • SMI-SPINTRONICS
    • SMI-NE: From 2006 in EWI-NE

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