Abstract
In theories of electron tunneling between metallic layers, one fundamental question remains: which is the relevant density of states which determines the tunnel current through the barrier? In this letter, the influence of electron scattering at the metal/oxide interface in magnetic tunnel junctions on the tunnel current is addressed from a theoretical point of view. Two contributions to the tunnel current and to the magnetoresistance of these junctions are obtained: one from specular transmission through the barrier which is related to the one-dimensional density of states next to the metal/oxide interface, the other from tunneling assisted by interfacial scattering which depends both on the one-dimensional and three-dimensional density of states. The effect of spin-flip scattering on the impurities is discussed as well.
| Original language | English |
|---|---|
| Pages (from-to) | 808-814 |
| Number of pages | 7 |
| Journal | Europhysics letters |
| Volume | 46 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 1999 |
Keywords
- SMI-SPINTRONICS
- SMI-NE: From 2006 in EWI-NE
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