Effect of ion irradiation on the characteristics of magnetic tunnel junctions

T. Banerjee, T. Som, D. Kinjilal, J.S. Moodera

    Research output: Contribution to journalArticleAcademicpeer-review

    7 Citations (Scopus)

    Abstract

    The effect of disorder caused by MeV heavy ion irradiation on the tunnel magnetoresistance (TMR) of magnetic tunnel junctions is investigated. Two types of tunnel junctions, viz. Co/Al2O3/Ni80Fe20 and Co/Gd-doped Al2O3/Ni80 Fe20 are studied. Upon 70 MeV Si ion irradiation at a fluence of 5 × 1011 ions/cm2, the undoped junctions show relatively small but irreversible change, while the Gd-doped junctions show a huge reduction, in TMR. In both cases junctions were completely destroyed by 200 MeV Ag ion irradiation at a fluence of 1×1011 ions/cm2. The results are attributed to the modification of the barrier and the neighboring interfaces caused by the high energy density deposited by incident ions.
    Original languageUndefined
    Article number10.1051/epjap:2005080
    Pages (from-to)115-118
    Number of pages4
    JournalEuropean physical journal. Applied physics
    Volume32
    Issue number2
    DOIs
    Publication statusPublished - 2005

    Keywords

    • SMI-NE: From 2006 in EWI-NE
    • EWI-5378
    • IR-62937
    • METIS-226854

    Cite this