Effect of ion irradiation on the characteristics of magnetic tunnel junctions

T. Banerjee, T. Som, D. Kinjilal, J.S. Moodera

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    The effect of disorder caused by MeV heavy ion irradiation on the tunnel magnetoresistance (TMR) of magnetic tunnel junctions is investigated. Two types of tunnel junctions, viz. Co/Al2O3/Ni80Fe20 and Co/Gd-doped Al2O3/Ni80 Fe20 are studied. Upon 70 MeV Si ion irradiation at a fluence of 5 × 1011 ions/cm2, the undoped junctions show relatively small but irreversible change, while the Gd-doped junctions show a huge reduction, in TMR. In both cases junctions were completely destroyed by 200 MeV Ag ion irradiation at a fluence of 1×1011 ions/cm2. The results are attributed to the modification of the barrier and the neighboring interfaces caused by the high energy density deposited by incident ions.
    Original languageUndefined
    Article number10.1051/epjap:2005080
    Pages (from-to)115-118
    Number of pages4
    JournalEuropean physical journal. Applied physics
    Issue number2
    Publication statusPublished - 2005


    • SMI-NE: From 2006 in EWI-NE
    • EWI-5378
    • IR-62937
    • METIS-226854

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