Abstract
A discrete dipole model has been developed to describe Surface Second Harmonic Generation by centrosymmetric semiconductors. The double cell method, which enables the linear reflection problem to be solved numerically for semi-infinite systems, has been extended for the nonlinear case. It is shown that a single layer of nonlinear electric dipoles at the surface and nonlocal effects allows to describe the angle of incidence dependent anisotropic SHG obtained from oxidised Si(001) wafers. The influence of the linear response, turns out to be essential to understand the anisotropic SHG-process.
Original language | English |
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Pages (from-to) | 17-20 |
Number of pages | 4 |
Journal | Solid state communications |
Volume | 93 |
Issue number | 1 |
DOIs | |
Publication status | Published - 1994 |