The effect of the nonmagnetic (NM) spacer on hot-electron transport in the spin-valve transistor (SVT) is reported. Au, Cu and Ta have been used in the nonmagnetic spacer of the Ni80Fe20/NM/Co spin-valve base. Devices with Cu show 1.5 times higher output current than those with Au at comparable magnetic sensitivity. Structures with Ta spacer show a reduction in the magnetocurrent (MC) from 300% to 9% while the transfer ratio is reduced by three orders of magnitude compared to devices with Au and Cu. The collector current of the spin-valve transistor with Cu spacer increases linearly with emitter current, and a collector current of 64 Click to view the MathML source A is achieved.
Gökcan, H., Lodder, J. C., & Jansen, R. (2006). Effect of nonmagnetic spacer on hot-electron transport in the spin-valve transistor. Materials science & engineering B, 126(2-3), 129-132. https://doi.org/10.1016/j.mseb.2005.09.034