Effect of nonmagnetic spacer on hot-electron transport in the spin-valve transistor

H. Gökcan, J.C. Lodder, R. Jansen

    Research output: Contribution to journalArticleAcademicpeer-review

    2 Citations (Scopus)

    Abstract

    The effect of the nonmagnetic (NM) spacer on hot-electron transport in the spin-valve transistor (SVT) is reported. Au, Cu and Ta have been used in the nonmagnetic spacer of the Ni80Fe20/NM/Co spin-valve base. Devices with Cu show 1.5 times higher output current than those with Au at comparable magnetic sensitivity. Structures with Ta spacer show a reduction in the magnetocurrent (MC) from 300% to 9% while the transfer ratio is reduced by three orders of magnitude compared to devices with Au and Cu. The collector current of the spin-valve transistor with Cu spacer increases linearly with emitter current, and a collector current of 64 Click to view the MathML source A is achieved.
    Original languageUndefined
    Pages (from-to)129-132
    Number of pages4
    JournalMaterials science & engineering B
    Volume126
    Issue number2-3
    DOIs
    Publication statusPublished - 2006

    Keywords

    • IR-53699
    • METIS-226855
    • EWI-1746

    Cite this

    Gökcan, H. ; Lodder, J.C. ; Jansen, R. / Effect of nonmagnetic spacer on hot-electron transport in the spin-valve transistor. In: Materials science & engineering B. 2006 ; Vol. 126, No. 2-3. pp. 129-132.
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    abstract = "The effect of the nonmagnetic (NM) spacer on hot-electron transport in the spin-valve transistor (SVT) is reported. Au, Cu and Ta have been used in the nonmagnetic spacer of the Ni80Fe20/NM/Co spin-valve base. Devices with Cu show 1.5 times higher output current than those with Au at comparable magnetic sensitivity. Structures with Ta spacer show a reduction in the magnetocurrent (MC) from 300{\%} to 9{\%} while the transfer ratio is reduced by three orders of magnitude compared to devices with Au and Cu. The collector current of the spin-valve transistor with Cu spacer increases linearly with emitter current, and a collector current of 64 Click to view the MathML source A is achieved.",
    keywords = "IR-53699, METIS-226855, EWI-1746",
    author = "H. G{\"o}kcan and J.C. Lodder and R. Jansen",
    note = "Appeared online 17-10-2005 with DOI:10.1016/j.mseb.2005.09.034",
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    Effect of nonmagnetic spacer on hot-electron transport in the spin-valve transistor. / Gökcan, H.; Lodder, J.C.; Jansen, R.

    In: Materials science & engineering B, Vol. 126, No. 2-3, 2006, p. 129-132.

    Research output: Contribution to journalArticleAcademicpeer-review

    TY - JOUR

    T1 - Effect of nonmagnetic spacer on hot-electron transport in the spin-valve transistor

    AU - Gökcan, H.

    AU - Lodder, J.C.

    AU - Jansen, R.

    N1 - Appeared online 17-10-2005 with DOI:10.1016/j.mseb.2005.09.034

    PY - 2006

    Y1 - 2006

    N2 - The effect of the nonmagnetic (NM) spacer on hot-electron transport in the spin-valve transistor (SVT) is reported. Au, Cu and Ta have been used in the nonmagnetic spacer of the Ni80Fe20/NM/Co spin-valve base. Devices with Cu show 1.5 times higher output current than those with Au at comparable magnetic sensitivity. Structures with Ta spacer show a reduction in the magnetocurrent (MC) from 300% to 9% while the transfer ratio is reduced by three orders of magnitude compared to devices with Au and Cu. The collector current of the spin-valve transistor with Cu spacer increases linearly with emitter current, and a collector current of 64 Click to view the MathML source A is achieved.

    AB - The effect of the nonmagnetic (NM) spacer on hot-electron transport in the spin-valve transistor (SVT) is reported. Au, Cu and Ta have been used in the nonmagnetic spacer of the Ni80Fe20/NM/Co spin-valve base. Devices with Cu show 1.5 times higher output current than those with Au at comparable magnetic sensitivity. Structures with Ta spacer show a reduction in the magnetocurrent (MC) from 300% to 9% while the transfer ratio is reduced by three orders of magnitude compared to devices with Au and Cu. The collector current of the spin-valve transistor with Cu spacer increases linearly with emitter current, and a collector current of 64 Click to view the MathML source A is achieved.

    KW - IR-53699

    KW - METIS-226855

    KW - EWI-1746

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    DO - 10.1016/j.mseb.2005.09.034

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    EP - 132

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    JF - Materials science & engineering B

    SN - 0921-5107

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