Effect of nonmagnetic spacer on hot-electron transport in the spin-valve transistor

H. Gökcan, J.C. Lodder, R. Jansen

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    2 Citations (Scopus)

    Abstract

    The effect of the nonmagnetic (NM) spacer on hot-electron transport in the spin-valve transistor (SVT) is reported. Au, Cu and Ta have been used in the nonmagnetic spacer of the Ni80Fe20/NM/Co spin-valve base. Devices with Cu show 1.5 times higher output current than those with Au at comparable magnetic sensitivity. Structures with Ta spacer show a reduction in the magnetocurrent (MC) from 300% to 9% while the transfer ratio is reduced by three orders of magnitude compared to devices with Au and Cu. The collector current of the spin-valve transistor with Cu spacer increases linearly with emitter current, and a collector current of 64 Click to view the MathML source A is achieved.
    Original languageUndefined
    Pages (from-to)129-132
    Number of pages4
    JournalMaterials science & engineering B
    Volume126
    Issue number2-3
    DOIs
    Publication statusPublished - 2006

    Keywords

    • IR-53699
    • METIS-226855
    • EWI-1746

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