Effect of orbital hybridization on spin-polarized tunneling across Co/C60 interfaces

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    Abstract

    The interaction between ferromagnetic surfaces and organic semiconductors leads to the formation of hybrid interfacial states. As a consequence, the local magnetic moment is altered, a hybrid interfacial density of states (DOS) is formed, and spin-dependent shifts of energy levels occur. Here, we show that this hybridization affects spin transport across the interface significantly. We report spin-dependent electronic transport measurements for tunnel junctions comprising C60 molecular thin films grown on top of face-centered-cubic (fcc) epitaxial Co electrodes, an lOx tunnel barrier, and an Al counter electrode. Since only one ferromagnetic electrode (Co) is present, spin-polarized transport is due to tunneling anisotropic magnetoresistance(TAMR). An in-plane TAMR ratio of approximately 0.7% has been measured at 5 K under application of a magnetic field of 800 mT. The magnetic switching behavior shows some remarkable features, which are attributed to the rotation of interfacial magnetic moments. This behavior can be ascribed to the magnetic coupling between the Co thin films and the newly formed Co/C60 hybridized interfacial states. Using the Tedrow-Meservey technique, the tunnel spin polarization of the Co/C60 interface was found to be 43%.
    Original languageUndefined
    Pages (from-to)28349-28356
    Number of pages8
    JournalACS applied materials & interfaces
    Volume8
    Issue number42
    DOIs
    Publication statusPublished - 26 Sep 2016

    Keywords

    • interfacial magnetic moments
    • tunneling anisotropic magnetoresistance (TAMR)
    • hybrid interfacial density of states
    • spin-dependent density of states
    • spinterfaces
    • IR-103280
    • organic spintronics
    • C60
    • Co/C60 hybrid interfacial states
    • METIS-321674
    • EWI-27604

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