Effect of orbital hybridization on spin-polarized tunneling across Co/C60 interfaces

Research output: Contribution to journalArticleAcademicpeer-review

7 Citations (Scopus)

Abstract

The interaction between ferromagnetic surfaces and organic semiconductors leads to the formation of hybrid interfacial states. As a consequence, the local magnetic moment is altered, a hybrid interfacial density of states (DOS) is formed, and spin-dependent shifts of energy levels occur. Here, we show that this hybridization affects spin transport across the interface significantly. We report spin-dependent electronic transport measurements for tunnel junctions comprising C60 molecular thin films grown on top of face-centered-cubic (fcc) epitaxial Co electrodes, an lOx tunnel barrier, and an Al counter electrode. Since only one ferromagnetic electrode (Co) is present, spin-polarized transport is due to tunneling anisotropic magnetoresistance(TAMR). An in-plane TAMR ratio of approximately 0.7% has been measured at 5 K under application of a magnetic field of 800 mT. The magnetic switching behavior shows some remarkable features, which are attributed to the rotation of interfacial magnetic moments. This behavior can be ascribed to the magnetic coupling between the Co thin films and the newly formed Co/C60 hybridized interfacial states. Using the Tedrow-Meservey technique, the tunnel spin polarization of the Co/C60 interface was found to be 43%.
Original languageUndefined
Pages (from-to)28349-28356
Number of pages8
JournalACS applied materials & interfaces
Volume8
Issue number42
DOIs
Publication statusPublished - 26 Sep 2016

Keywords

  • interfacial magnetic moments
  • tunneling anisotropic magnetoresistance (TAMR)
  • hybrid interfacial density of states
  • spin-dependent density of states
  • spinterfaces
  • IR-103280
  • organic spintronics
  • C60
  • Co/C60 hybrid interfacial states
  • METIS-321674
  • EWI-27604

Cite this

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title = "Effect of orbital hybridization on spin-polarized tunneling across Co/C60 interfaces",
abstract = "The interaction between ferromagnetic surfaces and organic semiconductors leads to the formation of hybrid interfacial states. As a consequence, the local magnetic moment is altered, a hybrid interfacial density of states (DOS) is formed, and spin-dependent shifts of energy levels occur. Here, we show that this hybridization affects spin transport across the interface significantly. We report spin-dependent electronic transport measurements for tunnel junctions comprising C60 molecular thin films grown on top of face-centered-cubic (fcc) epitaxial Co electrodes, an lOx tunnel barrier, and an Al counter electrode. Since only one ferromagnetic electrode (Co) is present, spin-polarized transport is due to tunneling anisotropic magnetoresistance(TAMR). An in-plane TAMR ratio of approximately 0.7{\%} has been measured at 5 K under application of a magnetic field of 800 mT. The magnetic switching behavior shows some remarkable features, which are attributed to the rotation of interfacial magnetic moments. This behavior can be ascribed to the magnetic coupling between the Co thin films and the newly formed Co/C60 hybridized interfacial states. Using the Tedrow-Meservey technique, the tunnel spin polarization of the Co/C60 interface was found to be 43{\%}.",
keywords = "interfacial magnetic moments, tunneling anisotropic magnetoresistance (TAMR), hybrid interfacial density of states, spin-dependent density of states, spinterfaces, IR-103280, organic spintronics, C60, Co/C60 hybrid interfacial states, METIS-321674, EWI-27604",
author = "Kai Wang and Elia Strambini and Sanderink, {Johannes G.M.} and Thijs Bolhuis and {van der Wiel}, {Wilfred Gerard} and {de Jong}, {Machiel Pieter}",
note = "10.1021/acsami.6b08313",
year = "2016",
month = "9",
day = "26",
doi = "10.1021/acsami.6b08313",
language = "Undefined",
volume = "8",
pages = "28349--28356",
journal = "ACS applied materials & interfaces",
issn = "1944-8244",
publisher = "American Chemical Society",
number = "42",

}

Effect of orbital hybridization on spin-polarized tunneling across Co/C60 interfaces. / Wang, Kai; Strambini, Elia; Sanderink, Johannes G.M.; Bolhuis, Thijs; van der Wiel, Wilfred Gerard; de Jong, Machiel Pieter.

In: ACS applied materials & interfaces, Vol. 8, No. 42, 26.09.2016, p. 28349-28356.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Effect of orbital hybridization on spin-polarized tunneling across Co/C60 interfaces

AU - Wang, Kai

AU - Strambini, Elia

AU - Sanderink, Johannes G.M.

AU - Bolhuis, Thijs

AU - van der Wiel, Wilfred Gerard

AU - de Jong, Machiel Pieter

N1 - 10.1021/acsami.6b08313

PY - 2016/9/26

Y1 - 2016/9/26

N2 - The interaction between ferromagnetic surfaces and organic semiconductors leads to the formation of hybrid interfacial states. As a consequence, the local magnetic moment is altered, a hybrid interfacial density of states (DOS) is formed, and spin-dependent shifts of energy levels occur. Here, we show that this hybridization affects spin transport across the interface significantly. We report spin-dependent electronic transport measurements for tunnel junctions comprising C60 molecular thin films grown on top of face-centered-cubic (fcc) epitaxial Co electrodes, an lOx tunnel barrier, and an Al counter electrode. Since only one ferromagnetic electrode (Co) is present, spin-polarized transport is due to tunneling anisotropic magnetoresistance(TAMR). An in-plane TAMR ratio of approximately 0.7% has been measured at 5 K under application of a magnetic field of 800 mT. The magnetic switching behavior shows some remarkable features, which are attributed to the rotation of interfacial magnetic moments. This behavior can be ascribed to the magnetic coupling between the Co thin films and the newly formed Co/C60 hybridized interfacial states. Using the Tedrow-Meservey technique, the tunnel spin polarization of the Co/C60 interface was found to be 43%.

AB - The interaction between ferromagnetic surfaces and organic semiconductors leads to the formation of hybrid interfacial states. As a consequence, the local magnetic moment is altered, a hybrid interfacial density of states (DOS) is formed, and spin-dependent shifts of energy levels occur. Here, we show that this hybridization affects spin transport across the interface significantly. We report spin-dependent electronic transport measurements for tunnel junctions comprising C60 molecular thin films grown on top of face-centered-cubic (fcc) epitaxial Co electrodes, an lOx tunnel barrier, and an Al counter electrode. Since only one ferromagnetic electrode (Co) is present, spin-polarized transport is due to tunneling anisotropic magnetoresistance(TAMR). An in-plane TAMR ratio of approximately 0.7% has been measured at 5 K under application of a magnetic field of 800 mT. The magnetic switching behavior shows some remarkable features, which are attributed to the rotation of interfacial magnetic moments. This behavior can be ascribed to the magnetic coupling between the Co thin films and the newly formed Co/C60 hybridized interfacial states. Using the Tedrow-Meservey technique, the tunnel spin polarization of the Co/C60 interface was found to be 43%.

KW - interfacial magnetic moments

KW - tunneling anisotropic magnetoresistance (TAMR)

KW - hybrid interfacial density of states

KW - spin-dependent density of states

KW - spinterfaces

KW - IR-103280

KW - organic spintronics

KW - C60

KW - Co/C60 hybrid interfacial states

KW - METIS-321674

KW - EWI-27604

U2 - 10.1021/acsami.6b08313

DO - 10.1021/acsami.6b08313

M3 - Article

VL - 8

SP - 28349

EP - 28356

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

SN - 1944-8244

IS - 42

ER -