Effect of Switched biasing on 1/f noise and random telegraph signals in deep-submicron MOSFETs

A.P. van der Wel, Eric A.M. Klumperink, Bram Nauta

    Research output: Contribution to journalArticleAcademicpeer-review

    17 Citations (Scopus)
    61 Downloads (Pure)

    Abstract

    Switched bias noise measurements on relatively large (>0.8 μm) n-channel MOSFETs have been reported in the literature. Measurements are presented on 0.2/0.18 μm n-channel MOSFETs, the noise performance of which seems to be dominated by the effect of a small number of interface states. Switched biasing is seen to influence the dynamic behaviour of these states, and reduce the noise of the devices
    Original languageUndefined
    Pages (from-to)55-56
    Number of pages2
    JournalElectronics letters
    Volume37
    Issue number1
    DOIs
    Publication statusPublished - Jan 2001

    Keywords

    • METIS-111657
    • IR-41735
    • EWI-14339

    Cite this

    @article{3eef59a55c4c41d5915dbba8f0386619,
    title = "Effect of Switched biasing on 1/f noise and random telegraph signals in deep-submicron MOSFETs",
    abstract = "Switched bias noise measurements on relatively large (>0.8 μm) n-channel MOSFETs have been reported in the literature. Measurements are presented on 0.2/0.18 μm n-channel MOSFETs, the noise performance of which seems to be dominated by the effect of a small number of interface states. Switched biasing is seen to influence the dynamic behaviour of these states, and reduce the noise of the devices",
    keywords = "METIS-111657, IR-41735, EWI-14339",
    author = "{van der Wel}, A.P. and Klumperink, {Eric A.M.} and Bram Nauta",
    year = "2001",
    month = "1",
    doi = "10.1049/el:20010008",
    language = "Undefined",
    volume = "37",
    pages = "55--56",
    journal = "Electronics letters",
    issn = "0013-5194",
    publisher = "Institution of Engineering and Technology",
    number = "1",

    }

    Effect of Switched biasing on 1/f noise and random telegraph signals in deep-submicron MOSFETs. / van der Wel, A.P.; Klumperink, Eric A.M.; Nauta, Bram.

    In: Electronics letters, Vol. 37, No. 1, 01.2001, p. 55-56.

    Research output: Contribution to journalArticleAcademicpeer-review

    TY - JOUR

    T1 - Effect of Switched biasing on 1/f noise and random telegraph signals in deep-submicron MOSFETs

    AU - van der Wel, A.P.

    AU - Klumperink, Eric A.M.

    AU - Nauta, Bram

    PY - 2001/1

    Y1 - 2001/1

    N2 - Switched bias noise measurements on relatively large (>0.8 μm) n-channel MOSFETs have been reported in the literature. Measurements are presented on 0.2/0.18 μm n-channel MOSFETs, the noise performance of which seems to be dominated by the effect of a small number of interface states. Switched biasing is seen to influence the dynamic behaviour of these states, and reduce the noise of the devices

    AB - Switched bias noise measurements on relatively large (>0.8 μm) n-channel MOSFETs have been reported in the literature. Measurements are presented on 0.2/0.18 μm n-channel MOSFETs, the noise performance of which seems to be dominated by the effect of a small number of interface states. Switched biasing is seen to influence the dynamic behaviour of these states, and reduce the noise of the devices

    KW - METIS-111657

    KW - IR-41735

    KW - EWI-14339

    U2 - 10.1049/el:20010008

    DO - 10.1049/el:20010008

    M3 - Article

    VL - 37

    SP - 55

    EP - 56

    JO - Electronics letters

    JF - Electronics letters

    SN - 0013-5194

    IS - 1

    ER -