Effect of Switched biasing on 1/f noise and random telegraph signals in deep-submicron MOSFETs

A.P. van der Wel, Eric A.M. Klumperink, Bram Nauta

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    Abstract

    Switched bias noise measurements on relatively large (>0.8 μm) n-channel MOSFETs have been reported in the literature. Measurements are presented on 0.2/0.18 μm n-channel MOSFETs, the noise performance of which seems to be dominated by the effect of a small number of interface states. Switched biasing is seen to influence the dynamic behaviour of these states, and reduce the noise of the devices
    Original languageEnglish
    Pages (from-to)55-56
    Number of pages2
    JournalElectronics letters
    Volume37
    Issue number1
    DOIs
    Publication statusPublished - 2001

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