Effect of Switched biasing on 1/f noise and random telegraph signals in deep-submicron MOSFETs

A.P. van der Wel; Eric A.M. Klumperink; Bram Nauta

doi:10.1049/el:20010008

Effect of Switched biasing on 1/f noise and random telegraph signals in deep-submicron MOSFETs

A.P. van der Wel, Eric A.M. Klumperink, Bram Nauta

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Abstract

Switched bias noise measurements on relatively large (>0.8 μm) n-channel MOSFETs have been reported in the literature. Measurements are presented on 0.2/0.18 μm n-channel MOSFETs, the noise performance of which seems to be dominated by the effect of a small number of interface states. Switched biasing is seen to influence the dynamic behaviour of these states, and reduce the noise of the devices

Original language	English
Pages (from-to)	55-56
Number of pages	2
Journal	Electronics letters
Volume	37
Issue number	1
DOIs	https://doi.org/10.1049/el:20010008
Publication status	Published - 2001

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@article{3eef59a55c4c41d5915dbba8f0386619,

title = "Effect of Switched biasing on 1/f noise and random telegraph signals in deep-submicron MOSFETs",

abstract = "Switched bias noise measurements on relatively large (>0.8 μm) n-channel MOSFETs have been reported in the literature. Measurements are presented on 0.2/0.18 μm n-channel MOSFETs, the noise performance of which seems to be dominated by the effect of a small number of interface states. Switched biasing is seen to influence the dynamic behaviour of these states, and reduce the noise of the devices",

author = "{van der Wel}, A.P. and Klumperink, {Eric A.M.} and Bram Nauta",

year = "2001",

doi = "10.1049/el:20010008",

language = "English",

volume = "37",

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journal = "Electronics letters",

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T1 - Effect of Switched biasing on 1/f noise and random telegraph signals in deep-submicron MOSFETs

AU - van der Wel, A.P.

AU - Klumperink, Eric A.M.

AU - Nauta, Bram

PY - 2001

Y1 - 2001

N2 - Switched bias noise measurements on relatively large (>0.8 μm) n-channel MOSFETs have been reported in the literature. Measurements are presented on 0.2/0.18 μm n-channel MOSFETs, the noise performance of which seems to be dominated by the effect of a small number of interface states. Switched biasing is seen to influence the dynamic behaviour of these states, and reduce the noise of the devices

AB - Switched bias noise measurements on relatively large (>0.8 μm) n-channel MOSFETs have been reported in the literature. Measurements are presented on 0.2/0.18 μm n-channel MOSFETs, the noise performance of which seems to be dominated by the effect of a small number of interface states. Switched biasing is seen to influence the dynamic behaviour of these states, and reduce the noise of the devices

U2 - 10.1049/el:20010008

DO - 10.1049/el:20010008

M3 - Article

SN - 0013-5194

VL - 37

SP - 55

EP - 56

JO - Electronics letters

JF - Electronics letters

IS - 1

ER -

Effect of Switched biasing on 1/f noise and random telegraph signals in deep-submicron MOSFETs

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