Abstract
Switched bias noise measurements on relatively large (>0.8 μm) n-channel MOSFETs have been reported in the literature. Measurements are presented on 0.2/0.18 μm n-channel MOSFETs, the noise performance of which seems to be dominated by the effect of a small number of interface states. Switched biasing is seen to influence the dynamic behaviour of these states, and reduce the noise of the devices
Original language | English |
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Pages (from-to) | 55-56 |
Number of pages | 2 |
Journal | Electronics letters |
Volume | 37 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2001 |