Effects of Dislocation Loops into Electroluminescence of Si-based Light Emitting Diodes

T. Hoang, P. Le Minh, J. Holleman, Jurriaan Schmitz

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    Abstract

    Recently different and contradicting results regarding the influence of dislocation loops on light emitting efficiency of Si-based LEDs at room temperature were published [1-4]. We report our results on light emission of devices called DILED and DiFLED which are with and without dislocation loops, respectively. The p-n junction in the DiFLED device was realized by dopant diffusion while using ion implantation with various ion energies for DILED. Electroluminescence (EL) has been used to investigate room-temperature light-emission and the contribution of dislocation loops by comparison of the characteristics between the DiFLED and DILED devices. In this paper, the device fabrication, working principle and properties will be discussed. The electrical and optical characteristics of the different devices were measured and discussed. Some simulation results using the Sivalco code give more insight on the effects of dislocation loops.
    Original languageUndefined
    Pages697-699
    Publication statusPublished - 2004
    EventAnnual Workshop on Semiconductor Advances for Future Electronics, SAFE 2004 - Veldhoven, Netherlands
    Duration: 25 Nov 200426 Nov 2004

    Workshop

    WorkshopAnnual Workshop on Semiconductor Advances for Future Electronics, SAFE 2004
    Abbreviated titleSAFE
    CountryNetherlands
    CityVeldhoven
    Period25/11/0426/11/04

    Keywords

    • IR-59561

    Cite this

    Hoang, T., Le Minh, P., Holleman, J., & Schmitz, J. (2004). Effects of Dislocation Loops into Electroluminescence of Si-based Light Emitting Diodes. 697-699. Paper presented at Annual Workshop on Semiconductor Advances for Future Electronics, SAFE 2004, Veldhoven, Netherlands.