Abstract
Recently different and contradicting results regarding the influence of dislocation loops on light emitting efficiency of Si-based LEDs at room temperature were published [1-4]. We report our results on light emission of devices called DILED and DiFLED which are with and without dislocation loops, respectively. The p-n junction in the DiFLED device was realized by dopant diffusion while using ion implantation with various ion energies for DILED. Electroluminescence (EL) has been used to investigate room-temperature light-emission and the contribution of dislocation loops by comparison of the characteristics between the DiFLED and DILED devices. In this paper, the device fabrication, working principle and properties will be discussed. The electrical and optical characteristics of the different devices were measured and discussed. Some simulation results using the Sivalco code give more insight on the effects of dislocation loops.
| Original language | Undefined |
|---|---|
| Pages | 697-699 |
| Publication status | Published - 2004 |
| Event | Annual Workshop on Semiconductor Advances for Future Electronics, SAFE 2004 - Veldhoven, Netherlands Duration: 25 Nov 2004 → 26 Nov 2004 |
Workshop
| Workshop | Annual Workshop on Semiconductor Advances for Future Electronics, SAFE 2004 |
|---|---|
| Abbreviated title | SAFE |
| Country/Territory | Netherlands |
| City | Veldhoven |
| Period | 25/11/04 → 26/11/04 |
Keywords
- IR-59561