Effects of Dislocation Loops into Electroluminescence of Si-based Light Emitting Diodes

T. Hoang

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

    Original languageUndefined
    Title of host publicationProceedings of Semiconductor Advances for Future Electronics
    Place of PublicationVeldhoven, The Netherlands
    PublisherSTW
    Pages-
    Publication statusPublished - 25 Nov 2004
    EventAnnual Workshop on Semiconductor Advances for Future Electronics, SAFE 2004 - Veldhoven, Netherlands
    Duration: 25 Nov 200426 Nov 2004

    Workshop

    WorkshopAnnual Workshop on Semiconductor Advances for Future Electronics, SAFE 2004
    Abbreviated titleSAFE
    CountryNetherlands
    CityVeldhoven
    Period25/11/0426/11/04

    Keywords

    • METIS-218920

    Cite this

    Hoang, T. (2004). Effects of Dislocation Loops into Electroluminescence of Si-based Light Emitting Diodes. In Proceedings of Semiconductor Advances for Future Electronics (pp. -). Veldhoven, The Netherlands: STW.
    Hoang, T. / Effects of Dislocation Loops into Electroluminescence of Si-based Light Emitting Diodes. Proceedings of Semiconductor Advances for Future Electronics. Veldhoven, The Netherlands : STW, 2004. pp. -
    @inproceedings{9035942ee51f4bdc8d9df84c1c5dcd11,
    title = "Effects of Dislocation Loops into Electroluminescence of Si-based Light Emitting Diodes",
    keywords = "METIS-218920",
    author = "T. Hoang",
    year = "2004",
    month = "11",
    day = "25",
    language = "Undefined",
    pages = "--",
    booktitle = "Proceedings of Semiconductor Advances for Future Electronics",
    publisher = "STW",

    }

    Hoang, T 2004, Effects of Dislocation Loops into Electroluminescence of Si-based Light Emitting Diodes. in Proceedings of Semiconductor Advances for Future Electronics. STW, Veldhoven, The Netherlands, pp. -, Annual Workshop on Semiconductor Advances for Future Electronics, SAFE 2004, Veldhoven, Netherlands, 25/11/04.

    Effects of Dislocation Loops into Electroluminescence of Si-based Light Emitting Diodes. / Hoang, T.

    Proceedings of Semiconductor Advances for Future Electronics. Veldhoven, The Netherlands : STW, 2004. p. -.

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

    TY - GEN

    T1 - Effects of Dislocation Loops into Electroluminescence of Si-based Light Emitting Diodes

    AU - Hoang, T.

    PY - 2004/11/25

    Y1 - 2004/11/25

    KW - METIS-218920

    M3 - Conference contribution

    SP - -

    BT - Proceedings of Semiconductor Advances for Future Electronics

    PB - STW

    CY - Veldhoven, The Netherlands

    ER -

    Hoang T. Effects of Dislocation Loops into Electroluminescence of Si-based Light Emitting Diodes. In Proceedings of Semiconductor Advances for Future Electronics. Veldhoven, The Netherlands: STW. 2004. p. -