Effects of free layer materials and thickness on TMR behaviour in magnetic tunnel junctions

Woo Chang Lim; B.G. Park; Ji Young Bae; Taek Dong Lee

doi:10.1002/pssa.200304664

Effects of free layer materials and thickness on TMR behaviour in magnetic tunnel junctions

Woo Chang Lim, B.G. Park, Ji Young Bae, Taek Dong Lee

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Abstract

In order to study the effects of free layer thickness on MR ratio and switching field, we changed the free layer material and its thickness. In the regime of an extremely thin free layer, both MR ratio and switching field decreased with decreasing free layer thickness. There is a critical thickness, at which no MR behavior was found. The MTJs with NiFe and CoFe free layers show no MR ratio below 1.5 nm and 1 nm, respectively. No MR behavior is associated with discontinuous film formation below a certain thickness. The difference of the critical thickness is associated with the different wettability of the free layer material on the aluminum oxide surface.

Original language	Undefined
Pages (from-to)	1696-1699
Journal	Physica Status Solidi A: Applied research
Volume	201
Issue number	8
DOIs	https://doi.org/10.1002/pssa.200304664
Publication status	Published - 2004

Keywords

IR-71947

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10.1002/pssa.200304664

Cite this

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title = "Effects of free layer materials and thickness on TMR behaviour in magnetic tunnel junctions",

abstract = "In order to study the effects of free layer thickness on MR ratio and switching field, we changed the free layer material and its thickness. In the regime of an extremely thin free layer, both MR ratio and switching field decreased with decreasing free layer thickness. There is a critical thickness, at which no MR behavior was found. The MTJs with NiFe and CoFe free layers show no MR ratio below 1.5 nm and 1 nm, respectively. No MR behavior is associated with discontinuous film formation below a certain thickness. The difference of the critical thickness is associated with the different wettability of the free layer material on the aluminum oxide surface.",

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T1 - Effects of free layer materials and thickness on TMR behaviour in magnetic tunnel junctions

AU - Lim, Woo Chang

AU - Park, B.G.

AU - Bae, Ji Young

AU - Lee, Taek Dong

PY - 2004

Y1 - 2004

N2 - In order to study the effects of free layer thickness on MR ratio and switching field, we changed the free layer material and its thickness. In the regime of an extremely thin free layer, both MR ratio and switching field decreased with decreasing free layer thickness. There is a critical thickness, at which no MR behavior was found. The MTJs with NiFe and CoFe free layers show no MR ratio below 1.5 nm and 1 nm, respectively. No MR behavior is associated with discontinuous film formation below a certain thickness. The difference of the critical thickness is associated with the different wettability of the free layer material on the aluminum oxide surface.

AB - In order to study the effects of free layer thickness on MR ratio and switching field, we changed the free layer material and its thickness. In the regime of an extremely thin free layer, both MR ratio and switching field decreased with decreasing free layer thickness. There is a critical thickness, at which no MR behavior was found. The MTJs with NiFe and CoFe free layers show no MR ratio below 1.5 nm and 1 nm, respectively. No MR behavior is associated with discontinuous film formation below a certain thickness. The difference of the critical thickness is associated with the different wettability of the free layer material on the aluminum oxide surface.

KW - IR-71947

U2 - 10.1002/pssa.200304664

DO - 10.1002/pssa.200304664

M3 - Article

SN - 0031-8965

VL - 201

SP - 1696

EP - 1699

JO - Physica Status Solidi A: Applied research

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