Effects of gate depletion and boron penetration on matching of deep submicron CMOS transistors

H.P. Tuinhout; A.H. Montree; J. Schmitz; P.A. Stolk

Effects of gate depletion and boron penetration on matching of deep submicron CMOS transistors

H.P. Tuinhout, A.H. Montree, J. Schmitz, P.A. Stolk

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

73 Citations (Scopus)

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Abstract

This paper presents new insights into the mechanisms of gate depletion and boron penetration in deep submicron CMOS technologies. MOSFET matching measurements show that these effects are stochastic in nature, and are associated with the gate poly-Si grain size distribution. Moreover, this work demonstrates that these effects can strongly degrade transistor matching performance of future CMOS generations.

Original language	English
Title of host publication	International Electron Devices Meeting, 1997, Washington, DC, December 7-10, 1997
Subtitle of host publication	IEDM technical digest
Place of Publication	Piscataway, NJ
Publisher	IEEE
Pages	631-634
Number of pages	4
ISBN (Print)	0-7803-4100-7, 0-7803-4101-5
Publication status	Published - 1 Dec 1997
Externally published	Yes
Event	1997 International Electron Devices Meeting, IEDM 1997 - Washington, United States Duration: 7 Dec 1997 → 10 Dec 1997

Publication series

Name	International Electron Devices Meeting, IEDM Technical Digest
Publisher	IEEE
Volume	1997
ISSN (Print)	0163-1918

Conference

Conference	1997 International Electron Devices Meeting, IEDM 1997
Abbreviated title	IEDM
Country/Territory	United States
City	Washington
Period	7/12/97 → 10/12/97

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Cite this

Tuinhout, H. P., Montree, A. H., Schmitz, J., & Stolk, P. A. (1997). Effects of gate depletion and boron penetration on matching of deep submicron CMOS transistors. In International Electron Devices Meeting, 1997, Washington, DC, December 7-10, 1997: IEDM technical digest (pp. 631-634). (International Electron Devices Meeting, IEDM Technical Digest; Vol. 1997). IEEE.

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title = "Effects of gate depletion and boron penetration on matching of deep submicron CMOS transistors",

abstract = "This paper presents new insights into the mechanisms of gate depletion and boron penetration in deep submicron CMOS technologies. MOSFET matching measurements show that these effects are stochastic in nature, and are associated with the gate poly-Si grain size distribution. Moreover, this work demonstrates that these effects can strongly degrade transistor matching performance of future CMOS generations.",

author = "H.P. Tuinhout and A.H. Montree and J. Schmitz and P.A. Stolk",

year = "1997",

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booktitle = "International Electron Devices Meeting, 1997, Washington, DC, December 7-10, 1997",

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note = "1997 International Electron Devices Meeting, IEDM 1997, IEDM ; Conference date: 07-12-1997 Through 10-12-1997",

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Tuinhout, HP, Montree, AH, Schmitz, J & Stolk, PA 1997, Effects of gate depletion and boron penetration on matching of deep submicron CMOS transistors. in International Electron Devices Meeting, 1997, Washington, DC, December 7-10, 1997: IEDM technical digest. International Electron Devices Meeting, IEDM Technical Digest, vol. 1997, IEEE, Piscataway, NJ, pp. 631-634, 1997 International Electron Devices Meeting, IEDM 1997, Washington, District of Columbia, United States, 7/12/97.

Effects of gate depletion and boron penetration on matching of deep submicron CMOS transistors. / Tuinhout, H.P.; Montree, A.H.; Schmitz, J. et al.
International Electron Devices Meeting, 1997, Washington, DC, December 7-10, 1997: IEDM technical digest. Piscataway, NJ: IEEE, 1997. p. 631-634 (International Electron Devices Meeting, IEDM Technical Digest; Vol. 1997).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Effects of gate depletion and boron penetration on matching of deep submicron CMOS transistors

AU - Tuinhout, H.P.

AU - Montree, A.H.

AU - Schmitz, J.

AU - Stolk, P.A.

PY - 1997/12/1

Y1 - 1997/12/1

N2 - This paper presents new insights into the mechanisms of gate depletion and boron penetration in deep submicron CMOS technologies. MOSFET matching measurements show that these effects are stochastic in nature, and are associated with the gate poly-Si grain size distribution. Moreover, this work demonstrates that these effects can strongly degrade transistor matching performance of future CMOS generations.

AB - This paper presents new insights into the mechanisms of gate depletion and boron penetration in deep submicron CMOS technologies. MOSFET matching measurements show that these effects are stochastic in nature, and are associated with the gate poly-Si grain size distribution. Moreover, this work demonstrates that these effects can strongly degrade transistor matching performance of future CMOS generations.

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M3 - Conference contribution

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SN - 0-7803-4100-7

SN - 0-7803-4101-5

T3 - International Electron Devices Meeting, IEDM Technical Digest

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EP - 634

BT - International Electron Devices Meeting, 1997, Washington, DC, December 7-10, 1997

PB - IEEE

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T2 - 1997 International Electron Devices Meeting, IEDM 1997

Y2 - 7 December 1997 through 10 December 1997

ER -

Effects of gate depletion and boron penetration on matching of deep submicron CMOS transistors

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