Effects of gate depletion and boron penetration on matching of deep submicron CMOS transistors

H.P. Tuinhout, A.H. Montree, J. Schmitz, P.A. Stolk

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

68 Citations (Scopus)
37 Downloads (Pure)

Abstract

This paper presents new insights into the mechanisms of gate depletion and boron penetration in deep submicron CMOS technologies. MOSFET matching measurements show that these effects are stochastic in nature, and are associated with the gate poly-Si grain size distribution. Moreover, this work demonstrates that these effects can strongly degrade transistor matching performance of future CMOS generations.

Original languageEnglish
Title of host publicationInternational Electron Devices Meeting, 1997, Washington, DC, December 7-10, 1997
Subtitle of host publicationIEDM technical digest
Place of PublicationPiscataway, NJ
PublisherIEEE
Pages631-634
Number of pages4
ISBN (Print)0-7803-4100-7, 0-7803-4101-5
Publication statusPublished - 1 Dec 1997
Externally publishedYes
Event1997 International Electron Devices Meeting, IEDM 1997 - Washington, United States
Duration: 7 Dec 199710 Dec 1997

Publication series

NameInternational Electron Devices Meeting, IEDM Technical Digest
PublisherIEEE
Volume1997
ISSN (Print)0163-1918

Conference

Conference1997 International Electron Devices Meeting, IEDM 1997
Abbreviated titleIEDM
CountryUnited States
CityWashington
Period7/12/9710/12/97

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