Effects of packaging and process spread on a mobility-based frequency reference in 0.16-μm CMOS

Fabio Sebastiano; Lucien Breems; Kofi A.A. Makinwa; S. Drago; Domine Leenaerts; Bram Nauta

doi:10.1109/ESSCIRC.2011.6044934

Effects of packaging and process spread on a mobility-based frequency reference in 0.16-μm CMOS

Fabio Sebastiano, Lucien Breems, Kofi A.A. Makinwa, S. Drago, Domine Leenaerts, Bram Nauta

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

5 Citations (Scopus)

245 Downloads (Pure)

Abstract

In this paper, we explore the robustness of frequency references based on the electron mobility in a MOS transistor by implementing them with both thin-oxide and thick-oxide MOS transistors in a 0.16-μm CMOS process, and by testing samples packaged in both ceramic and plastic packages. The proposed low-voltage low-power circuit requires no off-chip components, making it suitable for applications requiring fully integrated solutions, such as Wireless Sensor Networks. Over the temperature range from -55°C to 125°C, its frequency spread is less than ±1% (3σ) after a one-point trim. Fabricated in a baseline 0.16-μm CMOS process, the 50 kHz frequency reference occupies 0.06 mm2 and, at room temperature, its consumption with a 1.2-V supply is less than 17 μW.

Original language	Undefined
Title of host publication	Proceedings of the 37th European Solid-State Circuits Conference, ESSCIRC 2011
Place of Publication	Piscataway
Publisher	IEEE
Pages	511-514
Number of pages	4
ISBN (Print)	978-1-4577-0703-2
DOIs	https://doi.org/10.1109/ESSCIRC.2011.6044934
Publication status	Published - 12 Sept 2011
Event	37th European Solid-State Circuits Conference, ESSCIRC 2011 - Helsinki, Finland Duration: 12 Sept 2011 → 16 Sept 2011 Conference number: 37

Publication series

Name
Publisher	IEEE Press
ISSN (Print)	1930-8833

Conference

Conference	37th European Solid-State Circuits Conference, ESSCIRC 2011
Abbreviated title	ESSCIRC
Country/Territory	Finland
City	Helsinki
Period	12/09/11 → 16/09/11

Keywords

METIS-285020
EWI-21314
IR-79388

Access to Document

10.1109/ESSCIRC.2011.6044934

ESSCIRC2011_submittedAccepted author version, 268 KB

Cite this

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title = "Effects of packaging and process spread on a mobility-based frequency reference in 0.16-μm CMOS",

abstract = "In this paper, we explore the robustness of frequency references based on the electron mobility in a MOS transistor by implementing them with both thin-oxide and thick-oxide MOS transistors in a 0.16-μm CMOS process, and by testing samples packaged in both ceramic and plastic packages. The proposed low-voltage low-power circuit requires no off-chip components, making it suitable for applications requiring fully integrated solutions, such as Wireless Sensor Networks. Over the temperature range from -55°C to 125°C, its frequency spread is less than ±1% (3σ) after a one-point trim. Fabricated in a baseline 0.16-μm CMOS process, the 50 kHz frequency reference occupies 0.06 mm2 and, at room temperature, its consumption with a 1.2-V supply is less than 17 μW.",

keywords = "METIS-285020, EWI-21314, IR-79388",

author = "Fabio Sebastiano and Lucien Breems and Makinwa, {Kofi A.A.} and S. Drago and Domine Leenaerts and Bram Nauta",

note = "10.1109/ESSCIRC.2011.6044934 ; 37th European Solid-State Circuits Conference, ESSCIRC 2011 ; Conference date: 12-09-2011 Through 16-09-2011",

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Sebastiano, F, Breems, L, Makinwa, KAA, Drago, S, Leenaerts, D & Nauta, B 2011, Effects of packaging and process spread on a mobility-based frequency reference in 0.16-μm CMOS. in Proceedings of the 37th European Solid-State Circuits Conference, ESSCIRC 2011. IEEE, Piscataway, pp. 511-514, 37th European Solid-State Circuits Conference, ESSCIRC 2011, Helsinki, Finland, 12/09/11. https://doi.org/10.1109/ESSCIRC.2011.6044934

Effects of packaging and process spread on a mobility-based frequency reference in 0.16-μm CMOS. / Sebastiano, Fabio; Breems, Lucien; Makinwa, Kofi A.A. et al.
Proceedings of the 37th European Solid-State Circuits Conference, ESSCIRC 2011. Piscataway: IEEE, 2011. p. 511-514.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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AU - Leenaerts, Domine

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AB - In this paper, we explore the robustness of frequency references based on the electron mobility in a MOS transistor by implementing them with both thin-oxide and thick-oxide MOS transistors in a 0.16-μm CMOS process, and by testing samples packaged in both ceramic and plastic packages. The proposed low-voltage low-power circuit requires no off-chip components, making it suitable for applications requiring fully integrated solutions, such as Wireless Sensor Networks. Over the temperature range from -55°C to 125°C, its frequency spread is less than ±1% (3σ) after a one-point trim. Fabricated in a baseline 0.16-μm CMOS process, the 50 kHz frequency reference occupies 0.06 mm2 and, at room temperature, its consumption with a 1.2-V supply is less than 17 μW.

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