Effects of packaging and process spread on a mobility-based frequency reference in 0.16-μm CMOS

Fabio Sebastiano, Lucien Breems, Kofi A.A. Makinwa, S. Drago, Domine Leenaerts, Bram Nauta

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    In this paper, we explore the robustness of frequency references based on the electron mobility in a MOS transistor by implementing them with both thin-oxide and thick-oxide MOS transistors in a 0.16-μm CMOS process, and by testing samples packaged in both ceramic and plastic packages. The proposed low-voltage low-power circuit requires no off-chip components, making it suitable for applications requiring fully integrated solutions, such as Wireless Sensor Networks. Over the temperature range from -55°C to 125°C, its frequency spread is less than ±1% (3σ) after a one-point trim. Fabricated in a baseline 0.16-μm CMOS process, the 50 kHz frequency reference occupies 0.06 mm2 and, at room temperature, its consumption with a 1.2-V supply is less than 17 μW.
    Original languageUndefined
    Title of host publicationProceedings of the 37th European Solid-State Circuits Conference, ESSCIRC 2011
    Place of PublicationPiscataway
    Number of pages4
    ISBN (Print)978-1-4577-0703-2
    Publication statusPublished - 12 Sep 2011
    Event37th European Solid-State Circuits Conference, ESSCIRC 2011 - Helsinki, Finland
    Duration: 12 Sep 201116 Sep 2011
    Conference number: 37

    Publication series

    PublisherIEEE Press
    ISSN (Print)1930-8833


    Conference37th European Solid-State Circuits Conference, ESSCIRC 2011
    Abbreviated titleESSCIRC


    • METIS-285020
    • EWI-21314
    • IR-79388

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