Effects on ellipsometric parameters caused by heat treatment of silicon (111) surface

S. Kono; L.J. Hanekamp; Arend van Silfhout

doi:10.1016/0039-6028(77)90471-X

Effects on ellipsometric parameters caused by heat treatment of silicon (111) surface

S. Kono, L.J. Hanekamp, Arend van Silfhout

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Abstract

Heating of a silicon single crystal introduces a surface roughness. Crystals are heated for periods of 45 sec in the temperature range from 560 to 1150°C. Using ellipsometry, Auger electron spectroscopy, mass spectroscopy and micrography it has been shown that the changes in the ellipsometric parameters are caused by surface roughness which in turn is strongly related to the sublimation of silicon during heating. The relation between surface roughness and temperature of the crystal during the heating is not linear.

Original language	Undefined
Pages (from-to)	633-640
Journal	Surface science
Volume	65
Issue number	2
DOIs	https://doi.org/10.1016/0039-6028(77)90471-X
Publication status	Published - 1977

Keywords

IR-68361

Access to Document

10.1016/0039-6028(77)90471-X

Kono77effects

Cite this

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title = "Effects on ellipsometric parameters caused by heat treatment of silicon (111) surface",

abstract = "Heating of a silicon single crystal introduces a surface roughness. Crystals are heated for periods of 45 sec in the temperature range from 560 to 1150°C. Using ellipsometry, Auger electron spectroscopy, mass spectroscopy and micrography it has been shown that the changes in the ellipsometric parameters are caused by surface roughness which in turn is strongly related to the sublimation of silicon during heating. The relation between surface roughness and temperature of the crystal during the heating is not linear.",

keywords = "IR-68361",

author = "S. Kono and L.J. Hanekamp and {van Silfhout}, Arend",

year = "1977",

doi = "10.1016/0039-6028(77)90471-X",

language = "Undefined",

volume = "65",

pages = "633--640",

journal = "Surface science",

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T1 - Effects on ellipsometric parameters caused by heat treatment of silicon (111) surface

AU - Kono, S.

AU - Hanekamp, L.J.

AU - van Silfhout, Arend

PY - 1977

Y1 - 1977

N2 - Heating of a silicon single crystal introduces a surface roughness. Crystals are heated for periods of 45 sec in the temperature range from 560 to 1150°C. Using ellipsometry, Auger electron spectroscopy, mass spectroscopy and micrography it has been shown that the changes in the ellipsometric parameters are caused by surface roughness which in turn is strongly related to the sublimation of silicon during heating. The relation between surface roughness and temperature of the crystal during the heating is not linear.

AB - Heating of a silicon single crystal introduces a surface roughness. Crystals are heated for periods of 45 sec in the temperature range from 560 to 1150°C. Using ellipsometry, Auger electron spectroscopy, mass spectroscopy and micrography it has been shown that the changes in the ellipsometric parameters are caused by surface roughness which in turn is strongly related to the sublimation of silicon during heating. The relation between surface roughness and temperature of the crystal during the heating is not linear.

KW - IR-68361

U2 - 10.1016/0039-6028(77)90471-X

DO - 10.1016/0039-6028(77)90471-X

M3 - Article

SN - 0039-6028

VL - 65

SP - 633

EP - 640

JO - Surface science

JF - Surface science

IS - 2

ER -