Effects on ellipsometric parameters caused by heat treatment of silicon (111) surface

S. Kono, L.J. Hanekamp, Arend van Silfhout

    Research output: Contribution to journalArticleAcademic

    19 Citations (Scopus)
    37 Downloads (Pure)

    Abstract

    Heating of a silicon single crystal introduces a surface roughness. Crystals are heated for periods of 45 sec in the temperature range from 560 to 1150°C. Using ellipsometry, Auger electron spectroscopy, mass spectroscopy and micrography it has been shown that the changes in the ellipsometric parameters are caused by surface roughness which in turn is strongly related to the sublimation of silicon during heating. The relation between surface roughness and temperature of the crystal during the heating is not linear.
    Original languageUndefined
    Pages (from-to)633-640
    JournalSurface science
    Volume65
    Issue number2
    DOIs
    Publication statusPublished - 1977

    Keywords

    • IR-68361

    Cite this

    Kono, S. ; Hanekamp, L.J. ; van Silfhout, Arend. / Effects on ellipsometric parameters caused by heat treatment of silicon (111) surface. In: Surface science. 1977 ; Vol. 65, No. 2. pp. 633-640.
    @article{61ab3045930b4f56b9e51019a65db1dd,
    title = "Effects on ellipsometric parameters caused by heat treatment of silicon (111) surface",
    abstract = "Heating of a silicon single crystal introduces a surface roughness. Crystals are heated for periods of 45 sec in the temperature range from 560 to 1150°C. Using ellipsometry, Auger electron spectroscopy, mass spectroscopy and micrography it has been shown that the changes in the ellipsometric parameters are caused by surface roughness which in turn is strongly related to the sublimation of silicon during heating. The relation between surface roughness and temperature of the crystal during the heating is not linear.",
    keywords = "IR-68361",
    author = "S. Kono and L.J. Hanekamp and {van Silfhout}, Arend",
    year = "1977",
    doi = "10.1016/0039-6028(77)90471-X",
    language = "Undefined",
    volume = "65",
    pages = "633--640",
    journal = "Surface science",
    issn = "0039-6028",
    publisher = "Elsevier",
    number = "2",

    }

    Effects on ellipsometric parameters caused by heat treatment of silicon (111) surface. / Kono, S.; Hanekamp, L.J.; van Silfhout, Arend.

    In: Surface science, Vol. 65, No. 2, 1977, p. 633-640.

    Research output: Contribution to journalArticleAcademic

    TY - JOUR

    T1 - Effects on ellipsometric parameters caused by heat treatment of silicon (111) surface

    AU - Kono, S.

    AU - Hanekamp, L.J.

    AU - van Silfhout, Arend

    PY - 1977

    Y1 - 1977

    N2 - Heating of a silicon single crystal introduces a surface roughness. Crystals are heated for periods of 45 sec in the temperature range from 560 to 1150°C. Using ellipsometry, Auger electron spectroscopy, mass spectroscopy and micrography it has been shown that the changes in the ellipsometric parameters are caused by surface roughness which in turn is strongly related to the sublimation of silicon during heating. The relation between surface roughness and temperature of the crystal during the heating is not linear.

    AB - Heating of a silicon single crystal introduces a surface roughness. Crystals are heated for periods of 45 sec in the temperature range from 560 to 1150°C. Using ellipsometry, Auger electron spectroscopy, mass spectroscopy and micrography it has been shown that the changes in the ellipsometric parameters are caused by surface roughness which in turn is strongly related to the sublimation of silicon during heating. The relation between surface roughness and temperature of the crystal during the heating is not linear.

    KW - IR-68361

    U2 - 10.1016/0039-6028(77)90471-X

    DO - 10.1016/0039-6028(77)90471-X

    M3 - Article

    VL - 65

    SP - 633

    EP - 640

    JO - Surface science

    JF - Surface science

    SN - 0039-6028

    IS - 2

    ER -