Abstract
By varying the thulium concentration in the range of 1.5 – 8.0 at.% in thulium- gadolinium-lutetium-yttrium-co-doped monoclinic double tungstate channel waveguides, a maximum laser slope efficiency of 70% with respect to the absorbed pump power was obtained. Further integration of these channel waveguides with on- chip mirrors will combine high slope efficiencies and output powers with narrow-line spectral laser characteristics. A silicon nitride layer was deposited onto a planar thulium-co-doped monoclinic double tungstate layer, and subsequently covered by a metal mask. Strip-loaded, corrugated channel waveguides defined by electron-beam lithography were etched into the silicon nitride layer by means of reactive ion etching.
| Original language | Undefined |
|---|---|
| Title of host publication | 17th Annual Symposium of the IEEE Photonics Benelux Chapter |
| Place of Publication | Mons, Belgium |
| Publisher | University of Mons |
| Pages | 97-100 |
| Number of pages | 4 |
| ISBN (Print) | 978-2-8052-0184-4 |
| Publication status | Published - 29 Nov 2012 |
| Event | 17th Annual Symposium of the IEEE Photonics Benelux Chapter 2012 - Mons, Belgium Duration: 29 Nov 2012 → 30 Nov 2012 Conference number: 17 http://www.telecom.fpms.ac.be/IPS_symposium2012/ |
Publication series
| Name | |
|---|---|
| Publisher | Faculty of Engineering, University of Mons |
Conference
| Conference | 17th Annual Symposium of the IEEE Photonics Benelux Chapter 2012 |
|---|---|
| Country/Territory | Belgium |
| City | Mons |
| Period | 29/11/12 → 30/11/12 |
| Internet address |
Keywords
- IOMS-APD: Active Photonic Devices
- IR-83532
- METIS-293249
- EWI-22692
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