Electric field and interface charge extraction in field-plate assisted RESURF devices

Boni K. Boksteen, Anco Heringa, Alessandro Ferrara, Peter G. Steeneken, Jurriaan Schmitz, Raymond J.E. Hueting

    Research output: Contribution to journalArticleAcademicpeer-review

    7 Citations (Scopus)
    7 Downloads (Pure)


    A methodology for extracting the lateral electric field (Ex) in the drain extension of thin silicon-on-insulator high-voltage field-plate assisted reduced surface field (RESURF) devices is detailed including its limits and its accuracy. Analytical calculations and technology computer-aided design device modeling corresponding to experimental data are used. It is shown how to obtain trapped interface charge distributions (e.g., due to hot-carrier injection) from the extracted fields. Thus, a new method for determining the position and quantity of injected charges in the drain extension of RESURF power transistors is introduced.
    Original languageEnglish
    Pages (from-to)622-629
    Number of pages8
    JournalIEEE Transactions on Electron Devices
    Issue number2
    Early online date7 Jan 2015
    Publication statusPublished - 1 Feb 2015


    • reduced surface field (RESURF)
    • Double-diffused metal–oxide–semiconductor
    • Extraction
    • High-voltage
    • Silicon-on-insulator (SOI)
    • power transistor
    • field-plate (FP)
    • interface charge
    • hot-carrier injection (HCI)
    • electric field (Ex)
    • 2023 OA procedure


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