Abstract
A methodology for extracting the lateral electric field (Ex) in the drain extension of thin silicon-on-insulator high-voltage field-plate assisted reduced surface field (RESURF) devices is detailed including its limits and its accuracy. Analytical calculations and technology computer-aided design device modeling corresponding to experimental data are used. It is shown how to obtain trapped interface charge distributions (e.g., due to hot-carrier injection) from the extracted fields. Thus, a new method for determining the position and quantity of injected charges in the drain extension of RESURF power transistors is introduced.
Original language | Undefined |
---|---|
Pages (from-to) | 622-629 |
Number of pages | 8 |
Journal | IEEE transactions on electron devices |
Volume | 62 |
Issue number | 2 |
DOIs | |
Publication status | Published - 1 Feb 2015 |
Keywords
- reduced surface field (RESURF)
- EWI-25712
- Double-diffused metal–oxide–semiconductor
- Extraction
- High-voltage
- Silicon-on-insulator (SOI)
- IR-94199
- power transistor
- field-plate (FP)
- interface charge
- hot-carrier injection (HCI)
- METIS-312496
- electric field (Ex)