Electric field and interface charge extraction in field-plate assisted RESURF devices

B.K. Boksteen; Anco Heringa; A. Ferrara; Peter G. Steeneken; Jurriaan Schmitz; Raymond Josephus Engelbart Hueting

doi:10.1109/TED.2014.2383360

Electric field and interface charge extraction in field-plate assisted RESURF devices

B.K. Boksteen, Anco Heringa, A. Ferrara, Peter G. Steeneken, Jurriaan Schmitz, Raymond Josephus Engelbart Hueting

Research output: Contribution to journal › Article › Academic › peer-review

4 Citations (Scopus)

Abstract

A methodology for extracting the lateral electric field (Ex) in the drain extension of thin silicon-on-insulator high-voltage field-plate assisted reduced surface field (RESURF) devices is detailed including its limits and its accuracy. Analytical calculations and technology computer-aided design device modeling corresponding to experimental data are used. It is shown how to obtain trapped interface charge distributions (e.g., due to hot-carrier injection) from the extracted fields. Thus, a new method for determining the position and quantity of injected charges in the drain extension of RESURF power transistors is introduced.

Original language	Undefined
Pages (from-to)	622-629
Number of pages	8
Journal	IEEE transactions on electron devices
Volume	62
Issue number	2
DOIs	https://doi.org/10.1109/TED.2014.2383360
Publication status	Published - 1 Feb 2015

Keywords

reduced surface field (RESURF)
EWI-25712
Double-diffused metal–oxide–semiconductor
Extraction
High-voltage
Silicon-on-insulator (SOI)
IR-94199
power transistor
field-plate (FP)
interface charge
hot-carrier injection (HCI)
METIS-312496
electric field (Ex)

Access to Document

10.1109/TED.2014.2383360

http://eprints.eemcs.utwente.nl/secure2/25712/01/ted-boksteen.pdf

Cite this

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title = "Electric field and interface charge extraction in field-plate assisted RESURF devices",

abstract = "A methodology for extracting the lateral electric field (Ex) in the drain extension of thin silicon-on-insulator high-voltage field-plate assisted reduced surface field (RESURF) devices is detailed including its limits and its accuracy. Analytical calculations and technology computer-aided design device modeling corresponding to experimental data are used. It is shown how to obtain trapped interface charge distributions (e.g., due to hot-carrier injection) from the extracted fields. Thus, a new method for determining the position and quantity of injected charges in the drain extension of RESURF power transistors is introduced.",

keywords = "reduced surface field (RESURF), EWI-25712, Double-diffused metal–oxide–semiconductor, Extraction, High-voltage, Silicon-on-insulator (SOI), IR-94199, power transistor, field-plate (FP), interface charge, hot-carrier injection (HCI), METIS-312496, electric field (Ex)",

author = "B.K. Boksteen and Anco Heringa and A. Ferrara and Steeneken, {Peter G.} and Jurriaan Schmitz and Hueting, {Raymond Josephus Engelbart}",

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doi = "10.1109/TED.2014.2383360",

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Electric field and interface charge extraction in field-plate assisted RESURF devices. / Boksteen, B.K.; Heringa, Anco; Ferrara, A.; Steeneken, Peter G.; Schmitz, Jurriaan ; Hueting, Raymond Josephus Engelbart.

In: IEEE transactions on electron devices, Vol. 62, No. 2, 01.02.2015, p. 622-629.

Research output: Contribution to journal › Article › Academic › peer-review

TY - JOUR

T1 - Electric field and interface charge extraction in field-plate assisted RESURF devices

AU - Boksteen, B.K.

AU - Heringa, Anco

AU - Ferrara, A.

AU - Steeneken, Peter G.

AU - Schmitz, Jurriaan

AU - Hueting, Raymond Josephus Engelbart

N1 - eemcs-eprint-25712

PY - 2015/2/1

Y1 - 2015/2/1

N2 - A methodology for extracting the lateral electric field (Ex) in the drain extension of thin silicon-on-insulator high-voltage field-plate assisted reduced surface field (RESURF) devices is detailed including its limits and its accuracy. Analytical calculations and technology computer-aided design device modeling corresponding to experimental data are used. It is shown how to obtain trapped interface charge distributions (e.g., due to hot-carrier injection) from the extracted fields. Thus, a new method for determining the position and quantity of injected charges in the drain extension of RESURF power transistors is introduced.

AB - A methodology for extracting the lateral electric field (Ex) in the drain extension of thin silicon-on-insulator high-voltage field-plate assisted reduced surface field (RESURF) devices is detailed including its limits and its accuracy. Analytical calculations and technology computer-aided design device modeling corresponding to experimental data are used. It is shown how to obtain trapped interface charge distributions (e.g., due to hot-carrier injection) from the extracted fields. Thus, a new method for determining the position and quantity of injected charges in the drain extension of RESURF power transistors is introduced.

KW - reduced surface field (RESURF)

KW - EWI-25712

KW - Double-diffused metal–oxide–semiconductor

KW - Extraction

KW - High-voltage

KW - Silicon-on-insulator (SOI)

KW - IR-94199

KW - power transistor

KW - field-plate (FP)

KW - interface charge

KW - hot-carrier injection (HCI)

KW - METIS-312496

KW - electric field (Ex)

U2 - 10.1109/TED.2014.2383360

DO - 10.1109/TED.2014.2383360

M3 - Article

VL - 62

SP - 622

EP - 629

JO - IEEE transactions on electron devices

JF - IEEE transactions on electron devices

SN - 0018-9383

IS - 2

ER -