Electric field and interface charge extraction in field-plate assisted RESURF devices

Boni K. Boksteen; Anco Heringa; Alessandro Ferrara; Peter G. Steeneken; Jurriaan Schmitz; Raymond J.E. Hueting

doi:10.1109/TED.2014.2383360

Electric field and interface charge extraction in field-plate assisted RESURF devices

Boni K. Boksteen
, Anco Heringa
, Alessandro Ferrara
, Peter G. Steeneken
, Jurriaan Schmitz
, Raymond J.E. Hueting

Research output: Contribution to journal › Article › Academic › peer-review

7 Citations (Scopus)

60 Downloads (Pure)

Abstract

A methodology for extracting the lateral electric field (Ex) in the drain extension of thin silicon-on-insulator high-voltage field-plate assisted reduced surface field (RESURF) devices is detailed including its limits and its accuracy. Analytical calculations and technology computer-aided design device modeling corresponding to experimental data are used. It is shown how to obtain trapped interface charge distributions (e.g., due to hot-carrier injection) from the extracted fields. Thus, a new method for determining the position and quantity of injected charges in the drain extension of RESURF power transistors is introduced.

Original language	English
Pages (from-to)	622-629
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	62
Issue number	2
Early online date	7 Jan 2015
DOIs	https://doi.org/10.1109/TED.2014.2383360
Publication status	Published - 1 Feb 2015

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

reduced surface field (RESURF)
Double-diffused metal–oxide–semiconductor
Extraction
High-voltage
Silicon-on-insulator (SOI)
power transistor
field-plate (FP)
interface charge
hot-carrier injection (HCI)
electric field (Ex)
2023 OA procedure

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10.1109/TED.2014.2383360

ArticleFinal published version, 3.1 MBLicence: Taverne

Cite this

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title = "Electric field and interface charge extraction in field-plate assisted RESURF devices",

abstract = "A methodology for extracting the lateral electric field (Ex) in the drain extension of thin silicon-on-insulator high-voltage field-plate assisted reduced surface field (RESURF) devices is detailed including its limits and its accuracy. Analytical calculations and technology computer-aided design device modeling corresponding to experimental data are used. It is shown how to obtain trapped interface charge distributions (e.g., due to hot-carrier injection) from the extracted fields. Thus, a new method for determining the position and quantity of injected charges in the drain extension of RESURF power transistors is introduced.",

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T1 - Electric field and interface charge extraction in field-plate assisted RESURF devices

AU - Boksteen, Boni K.

AU - Heringa, Anco

AU - Ferrara, Alessandro

AU - Steeneken, Peter G.

AU - Schmitz, Jurriaan

AU - Hueting, Raymond J.E.

PY - 2015/2/1

Y1 - 2015/2/1

N2 - A methodology for extracting the lateral electric field (Ex) in the drain extension of thin silicon-on-insulator high-voltage field-plate assisted reduced surface field (RESURF) devices is detailed including its limits and its accuracy. Analytical calculations and technology computer-aided design device modeling corresponding to experimental data are used. It is shown how to obtain trapped interface charge distributions (e.g., due to hot-carrier injection) from the extracted fields. Thus, a new method for determining the position and quantity of injected charges in the drain extension of RESURF power transistors is introduced.

AB - A methodology for extracting the lateral electric field (Ex) in the drain extension of thin silicon-on-insulator high-voltage field-plate assisted reduced surface field (RESURF) devices is detailed including its limits and its accuracy. Analytical calculations and technology computer-aided design device modeling corresponding to experimental data are used. It is shown how to obtain trapped interface charge distributions (e.g., due to hot-carrier injection) from the extracted fields. Thus, a new method for determining the position and quantity of injected charges in the drain extension of RESURF power transistors is introduced.

KW - reduced surface field (RESURF)

KW - Double-diffused metal–oxide–semiconductor

KW - Extraction

KW - High-voltage

KW - Silicon-on-insulator (SOI)

KW - power transistor

KW - field-plate (FP)

KW - interface charge

KW - hot-carrier injection (HCI)

KW - electric field (Ex)

KW - 2023 OA procedure

U2 - 10.1109/TED.2014.2383360

DO - 10.1109/TED.2014.2383360

M3 - Article

SN - 0018-9383

VL - 62

SP - 622

EP - 629

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 2

ER -

Electric field and interface charge extraction in field-plate assisted RESURF devices

Abstract

UN SDGs

Keywords

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