Electric-field effect devices made of YBa2Cu3O7-x/SrTiO3 epitaxial multilayers

K. Joosse, Yu.M. Boguslavskij, G.J. Gerritsma, H. Rogalla, J.G. Wen, A.G. Sivakov

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Abstract

Three terminal superconducting electric-field effect devices, consisting of a bufferlayer of PrBa2Cu3O7-x, an ultrathin layer of YBa2Cu3O7-x and a SrTiO3 gate isolation layer were fabricated and successfully operated. Transmission electron microscopy and laser scanning microscopy showed that all layers are highly epitaxial and uniform over the device area. This is essentially important in the analysis of the mechanism of the electric field effect and for the reproducible fabrication of devices. With a 5 nm thick YBa2Cu3O7-x layer and an applied electric field of 0.85 MV/cm the critical current was decreased by 5% at low temperatures and up to 36% close to Tc. Also enhancement was obtained.
Original languageEnglish
Pages (from-to)179-184
Number of pages6
JournalPhysica C
Volume224
Issue number1-2
DOIs
Publication statusPublished - 1994

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Electric field effects
Multilayers
electric fields
Critical currents
Microscopic examination
Electric fields
Transmission electron microscopy
Scanning
Fabrication
Lasers
isolation
critical current
microscopy
Temperature
transmission electron microscopy
fabrication
scanning
strontium titanium oxide
barium copper yttrium oxide
augmentation

Cite this

Joosse, K., Boguslavskij, Y. M., Gerritsma, G. J., Rogalla, H., Wen, J. G., & Sivakov, A. G. (1994). Electric-field effect devices made of YBa2Cu3O7-x/SrTiO3 epitaxial multilayers. Physica C, 224(1-2), 179-184. https://doi.org/10.1016/0921-4534(94)90620-3
Joosse, K. ; Boguslavskij, Yu.M. ; Gerritsma, G.J. ; Rogalla, H. ; Wen, J.G. ; Sivakov, A.G. / Electric-field effect devices made of YBa2Cu3O7-x/SrTiO3 epitaxial multilayers. In: Physica C. 1994 ; Vol. 224, No. 1-2. pp. 179-184.
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abstract = "Three terminal superconducting electric-field effect devices, consisting of a bufferlayer of PrBa2Cu3O7-x, an ultrathin layer of YBa2Cu3O7-x and a SrTiO3 gate isolation layer were fabricated and successfully operated. Transmission electron microscopy and laser scanning microscopy showed that all layers are highly epitaxial and uniform over the device area. This is essentially important in the analysis of the mechanism of the electric field effect and for the reproducible fabrication of devices. With a 5 nm thick YBa2Cu3O7-x layer and an applied electric field of 0.85 MV/cm the critical current was decreased by 5{\%} at low temperatures and up to 36{\%} close to Tc. Also enhancement was obtained.",
author = "K. Joosse and Yu.M. Boguslavskij and G.J. Gerritsma and H. Rogalla and J.G. Wen and A.G. Sivakov",
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Joosse, K, Boguslavskij, YM, Gerritsma, GJ, Rogalla, H, Wen, JG & Sivakov, AG 1994, 'Electric-field effect devices made of YBa2Cu3O7-x/SrTiO3 epitaxial multilayers' Physica C, vol. 224, no. 1-2, pp. 179-184. https://doi.org/10.1016/0921-4534(94)90620-3

Electric-field effect devices made of YBa2Cu3O7-x/SrTiO3 epitaxial multilayers. / Joosse, K.; Boguslavskij, Yu.M.; Gerritsma, G.J.; Rogalla, H.; Wen, J.G.; Sivakov, A.G.

In: Physica C, Vol. 224, No. 1-2, 1994, p. 179-184.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Electric-field effect devices made of YBa2Cu3O7-x/SrTiO3 epitaxial multilayers

AU - Joosse, K.

AU - Boguslavskij, Yu.M.

AU - Gerritsma, G.J.

AU - Rogalla, H.

AU - Wen, J.G.

AU - Sivakov, A.G.

PY - 1994

Y1 - 1994

N2 - Three terminal superconducting electric-field effect devices, consisting of a bufferlayer of PrBa2Cu3O7-x, an ultrathin layer of YBa2Cu3O7-x and a SrTiO3 gate isolation layer were fabricated and successfully operated. Transmission electron microscopy and laser scanning microscopy showed that all layers are highly epitaxial and uniform over the device area. This is essentially important in the analysis of the mechanism of the electric field effect and for the reproducible fabrication of devices. With a 5 nm thick YBa2Cu3O7-x layer and an applied electric field of 0.85 MV/cm the critical current was decreased by 5% at low temperatures and up to 36% close to Tc. Also enhancement was obtained.

AB - Three terminal superconducting electric-field effect devices, consisting of a bufferlayer of PrBa2Cu3O7-x, an ultrathin layer of YBa2Cu3O7-x and a SrTiO3 gate isolation layer were fabricated and successfully operated. Transmission electron microscopy and laser scanning microscopy showed that all layers are highly epitaxial and uniform over the device area. This is essentially important in the analysis of the mechanism of the electric field effect and for the reproducible fabrication of devices. With a 5 nm thick YBa2Cu3O7-x layer and an applied electric field of 0.85 MV/cm the critical current was decreased by 5% at low temperatures and up to 36% close to Tc. Also enhancement was obtained.

U2 - 10.1016/0921-4534(94)90620-3

DO - 10.1016/0921-4534(94)90620-3

M3 - Article

VL - 224

SP - 179

EP - 184

JO - Physica C

JF - Physica C

SN - 0921-4534

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ER -

Joosse K, Boguslavskij YM, Gerritsma GJ, Rogalla H, Wen JG, Sivakov AG. Electric-field effect devices made of YBa2Cu3O7-x/SrTiO3 epitaxial multilayers. Physica C. 1994;224(1-2):179-184. https://doi.org/10.1016/0921-4534(94)90620-3