Electric-field effect devices made of YBa2Cu3O7-x/SrTiO3 epitaxial multilayers

K. Joosse; Yu.M. Boguslavskij; G.J. Gerritsma; H. Rogalla; J.G. Wen; A.G. Sivakov

doi:10.1016/0921-4534(94)90620-3

Electric-field effect devices made of YBa₂Cu₃O_7-x/SrTiO₃ epitaxial multilayers

K. Joosse, Yu.M. Boguslavskij, G.J. Gerritsma, H. Rogalla, J.G. Wen, A.G. Sivakov

Faculty of Science and Technology

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

Three terminal superconducting electric-field effect devices, consisting of a bufferlayer of PrBa₂Cu₃O_7-x, an ultrathin layer of YBa₂Cu₃O_7-x and a SrTiO₃ gate isolation layer were fabricated and successfully operated. Transmission electron microscopy and laser scanning microscopy showed that all layers are highly epitaxial and uniform over the device area. This is essentially important in the analysis of the mechanism of the electric field effect and for the reproducible fabrication of devices. With a 5 nm thick YBa₂Cu₃O_7-x layer and an applied electric field of 0.85 MV/cm the critical current was decreased by 5% at low temperatures and up to 36% close to T_c. Also enhancement was obtained.

Original language	English
Pages (from-to)	179-184
Number of pages	6
Journal	Physica C
Volume	224
Issue number	1-2
DOIs	https://doi.org/10.1016/0921-4534(94)90620-3
Publication status	Published - 1994

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title = "Electric-field effect devices made of YBa2Cu3O7-x/SrTiO3 epitaxial multilayers",

abstract = "Three terminal superconducting electric-field effect devices, consisting of a bufferlayer of PrBa2Cu3O7-x, an ultrathin layer of YBa2Cu3O7-x and a SrTiO3 gate isolation layer were fabricated and successfully operated. Transmission electron microscopy and laser scanning microscopy showed that all layers are highly epitaxial and uniform over the device area. This is essentially important in the analysis of the mechanism of the electric field effect and for the reproducible fabrication of devices. With a 5 nm thick YBa2Cu3O7-x layer and an applied electric field of 0.85 MV/cm the critical current was decreased by 5% at low temperatures and up to 36% close to Tc. Also enhancement was obtained.",

author = "K. Joosse and Yu.M. Boguslavskij and G.J. Gerritsma and H. Rogalla and J.G. Wen and A.G. Sivakov",

year = "1994",

doi = "10.1016/0921-4534(94)90620-3",

language = "English",

volume = "224",

pages = "179--184",

journal = "Physica C",

issn = "0921-4534",

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T1 - Electric-field effect devices made of YBa2Cu3O7-x/SrTiO3 epitaxial multilayers

AU - Joosse, K.

AU - Boguslavskij, Yu.M.

AU - Gerritsma, G.J.

AU - Rogalla, H.

AU - Wen, J.G.

AU - Sivakov, A.G.

PY - 1994

Y1 - 1994

N2 - Three terminal superconducting electric-field effect devices, consisting of a bufferlayer of PrBa2Cu3O7-x, an ultrathin layer of YBa2Cu3O7-x and a SrTiO3 gate isolation layer were fabricated and successfully operated. Transmission electron microscopy and laser scanning microscopy showed that all layers are highly epitaxial and uniform over the device area. This is essentially important in the analysis of the mechanism of the electric field effect and for the reproducible fabrication of devices. With a 5 nm thick YBa2Cu3O7-x layer and an applied electric field of 0.85 MV/cm the critical current was decreased by 5% at low temperatures and up to 36% close to Tc. Also enhancement was obtained.

AB - Three terminal superconducting electric-field effect devices, consisting of a bufferlayer of PrBa2Cu3O7-x, an ultrathin layer of YBa2Cu3O7-x and a SrTiO3 gate isolation layer were fabricated and successfully operated. Transmission electron microscopy and laser scanning microscopy showed that all layers are highly epitaxial and uniform over the device area. This is essentially important in the analysis of the mechanism of the electric field effect and for the reproducible fabrication of devices. With a 5 nm thick YBa2Cu3O7-x layer and an applied electric field of 0.85 MV/cm the critical current was decreased by 5% at low temperatures and up to 36% close to Tc. Also enhancement was obtained.

U2 - 10.1016/0921-4534(94)90620-3

DO - 10.1016/0921-4534(94)90620-3

M3 - Article

SN - 0921-4534

VL - 224

SP - 179

EP - 184

JO - Physica C

JF - Physica C

IS - 1-2

ER -

Electric-field effect devices made of YBa2Cu3O7-x/SrTiO3 epitaxial multilayers

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Electric-field effect devices made of YBa₂Cu₃O_7-x/SrTiO₃ epitaxial multilayers