Electrical and magnetic properties of semiconducting ternary U compounds: UTSn and UTSb

T. T.M. Palstra*, G. J. Nieuwenhuys, R. F.M. Vlastuin, J. A. Mydosh, K. H.J. Buschow

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

28 Citations (Scopus)
11 Downloads (Pure)

Abstract

We have measured the electrical-transport and magnetic properties of several intermetallic compounds UTSn and UTSb, where T is a transition metal. The electrical resistivity is up to three orders of magnitude larger than usually found for U-based compounds. This is ascribed to the occurrence of a spin polarized energy gap related to the MgAgAs-type crystal structure. For UNiSn at least one spin band closes at low temperature, resulting in half-metallic behavior. Interestingly, the magnetic properties exhibit Kondo-lattice character and weak-moment ordering.

Original languageEnglish
Pages (from-to)4279-4281
Number of pages3
JournalJournal of Applied Physics
Volume63
Issue number8
DOIs
Publication statusPublished - 1 Dec 1988
Externally publishedYes

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