Electrical and magnetic properties of semiconducting ternary U compounds: UTSn and UTSb

T. T.M. Palstra; G. J. Nieuwenhuys; R. F.M. Vlastuin; J. A. Mydosh; K. H.J. Buschow

doi:10.1063/1.340202

Electrical and magnetic properties of semiconducting ternary U compounds: UTSn and UTSb

T. T.M. Palstra^*, G. J. Nieuwenhuys, R. F.M. Vlastuin, J. A. Mydosh, K. H.J. Buschow

^*Corresponding author for this work

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Abstract

We have measured the electrical-transport and magnetic properties of several intermetallic compounds UTSn and UTSb, where T is a transition metal. The electrical resistivity is up to three orders of magnitude larger than usually found for U-based compounds. This is ascribed to the occurrence of a spin polarized energy gap related to the MgAgAs-type crystal structure. For UNiSn at least one spin band closes at low temperature, resulting in half-metallic behavior. Interestingly, the magnetic properties exhibit Kondo-lattice character and weak-moment ordering.

Original language	English
Pages (from-to)	4279-4281
Number of pages	3
Journal	Journal of Applied Physics
Volume	63
Issue number	8
DOIs	https://doi.org/10.1063/1.340202
Publication status	Published - 1 Dec 1988
Externally published	Yes

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title = "Electrical and magnetic properties of semiconducting ternary U compounds: UTSn and UTSb",

abstract = "We have measured the electrical-transport and magnetic properties of several intermetallic compounds UTSn and UTSb, where T is a transition metal. The electrical resistivity is up to three orders of magnitude larger than usually found for U-based compounds. This is ascribed to the occurrence of a spin polarized energy gap related to the MgAgAs-type crystal structure. For UNiSn at least one spin band closes at low temperature, resulting in half-metallic behavior. Interestingly, the magnetic properties exhibit Kondo-lattice character and weak-moment ordering.",

author = "Palstra, {T. T.M.} and Nieuwenhuys, {G. J.} and Vlastuin, {R. F.M.} and Mydosh, {J. A.} and Buschow, {K. H.J.}",

year = "1988",

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doi = "10.1063/1.340202",

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T1 - Electrical and magnetic properties of semiconducting ternary U compounds

T2 - UTSn and UTSb

AU - Palstra, T. T.M.

AU - Nieuwenhuys, G. J.

AU - Vlastuin, R. F.M.

AU - Mydosh, J. A.

AU - Buschow, K. H.J.

PY - 1988/12/1

Y1 - 1988/12/1

N2 - We have measured the electrical-transport and magnetic properties of several intermetallic compounds UTSn and UTSb, where T is a transition metal. The electrical resistivity is up to three orders of magnitude larger than usually found for U-based compounds. This is ascribed to the occurrence of a spin polarized energy gap related to the MgAgAs-type crystal structure. For UNiSn at least one spin band closes at low temperature, resulting in half-metallic behavior. Interestingly, the magnetic properties exhibit Kondo-lattice character and weak-moment ordering.

AB - We have measured the electrical-transport and magnetic properties of several intermetallic compounds UTSn and UTSb, where T is a transition metal. The electrical resistivity is up to three orders of magnitude larger than usually found for U-based compounds. This is ascribed to the occurrence of a spin polarized energy gap related to the MgAgAs-type crystal structure. For UNiSn at least one spin band closes at low temperature, resulting in half-metallic behavior. Interestingly, the magnetic properties exhibit Kondo-lattice character and weak-moment ordering.

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DO - 10.1063/1.340202

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SP - 4279

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

ER -

Electrical and magnetic properties of semiconducting ternary U compounds: UTSn and UTSb

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