Electrical behavior of ALD-molybdenum films in the thin-film limit

Kees Van Der Zouw; Simone D. Dulfer; Antonius A.I. Aarnink; Alexey Y. Kovalgin

doi:10.1109/ICMTS59902.2024.10520676

Electrical behavior of ALD-molybdenum films in the thin-film limit

Kees Van Der Zouw^*, Simone D. Dulfer, Antonius A.I. Aarnink, Alexey Y. Kovalgin

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

Test structures were designed and fabricated to investigate the electrical properties of ultra-thin molybdenum films obtained by atomic layer deposition. The films were incorporated in conventional Van der Pauw and circular transmission line method test structures to explore the effect of film thickness on the resistivity, temperature coefficient of resistance, contact resistivity, and external electric field applied. The resistivity was shown to depend strongly on film thickness, while the temperature coefficient of resistance changed from positive to negative, indicating a change in the dominant conduction mechanism. A modest field effect was observed for the films in their thickness limit.

Original language	English
Title of host publication	2024 IEEE 36th International Conference on Microelectronic Test Structures, ICMTS 2024 - Proceedings
Publisher	IEEE
ISBN (Electronic)	9798350329896
DOIs	https://doi.org/10.1109/ICMTS59902.2024.10520676
Publication status	Published - 10 May 2024
Event	36th IEEE International Conference on Microelectronic Test Structures, ICMTS 2024 - Edinburgh, United Kingdom Duration: 15 Apr 2024 → 18 Apr 2024 Conference number: 36

Publication series

Name	IEEE International Conference on Microelectronic Test Structures
ISSN (Print)	1071-9032
ISSN (Electronic)	2158-1029

Conference

Conference	36th IEEE International Conference on Microelectronic Test Structures, ICMTS 2024
Abbreviated title	ICMTS 2024
Country/Territory	United Kingdom
City	Edinburgh
Period	15/04/24 → 18/04/24

Keywords

2024 OA procedure

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10.1109/ICMTS59902.2024.10520676

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Van Der Zouw, K., Dulfer, S. D., Aarnink, A. A. I., & Kovalgin, A. Y. (2024). Electrical behavior of ALD-molybdenum films in the thin-film limit. In 2024 IEEE 36th International Conference on Microelectronic Test Structures, ICMTS 2024 - Proceedings (IEEE International Conference on Microelectronic Test Structures). IEEE. https://doi.org/10.1109/ICMTS59902.2024.10520676

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title = "Electrical behavior of ALD-molybdenum films in the thin-film limit",

abstract = "Test structures were designed and fabricated to investigate the electrical properties of ultra-thin molybdenum films obtained by atomic layer deposition. The films were incorporated in conventional Van der Pauw and circular transmission line method test structures to explore the effect of film thickness on the resistivity, temperature coefficient of resistance, contact resistivity, and external electric field applied. The resistivity was shown to depend strongly on film thickness, while the temperature coefficient of resistance changed from positive to negative, indicating a change in the dominant conduction mechanism. A modest field effect was observed for the films in their thickness limit.",

keywords = "2024 OA procedure",

author = "{Van Der Zouw}, Kees and Dulfer, {Simone D.} and Aarnink, {Antonius A.I.} and Kovalgin, {Alexey Y.}",

note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; 36th IEEE International Conference on Microelectronic Test Structures, ICMTS 2024, ICMTS 2024 ; Conference date: 15-04-2024 Through 18-04-2024",

year = "2024",

month = may,

day = "10",

doi = "10.1109/ICMTS59902.2024.10520676",

language = "English",

series = "IEEE International Conference on Microelectronic Test Structures",

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booktitle = "2024 IEEE 36th International Conference on Microelectronic Test Structures, ICMTS 2024 - Proceedings",

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}

Van Der Zouw, K, Dulfer, SD, Aarnink, AAI & Kovalgin, AY 2024, Electrical behavior of ALD-molybdenum films in the thin-film limit. in 2024 IEEE 36th International Conference on Microelectronic Test Structures, ICMTS 2024 - Proceedings. IEEE International Conference on Microelectronic Test Structures, IEEE, 36th IEEE International Conference on Microelectronic Test Structures, ICMTS 2024, Edinburgh, United Kingdom, 15/04/24. https://doi.org/10.1109/ICMTS59902.2024.10520676

Electrical behavior of ALD-molybdenum films in the thin-film limit. / Van Der Zouw, Kees; Dulfer, Simone D.; Aarnink, Antonius A.I. et al.
2024 IEEE 36th International Conference on Microelectronic Test Structures, ICMTS 2024 - Proceedings. IEEE, 2024. (IEEE International Conference on Microelectronic Test Structures).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Electrical behavior of ALD-molybdenum films in the thin-film limit

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AU - Aarnink, Antonius A.I.

AU - Kovalgin, Alexey Y.

N1 - Conference code: 36

PY - 2024/5/10

Y1 - 2024/5/10

N2 - Test structures were designed and fabricated to investigate the electrical properties of ultra-thin molybdenum films obtained by atomic layer deposition. The films were incorporated in conventional Van der Pauw and circular transmission line method test structures to explore the effect of film thickness on the resistivity, temperature coefficient of resistance, contact resistivity, and external electric field applied. The resistivity was shown to depend strongly on film thickness, while the temperature coefficient of resistance changed from positive to negative, indicating a change in the dominant conduction mechanism. A modest field effect was observed for the films in their thickness limit.

AB - Test structures were designed and fabricated to investigate the electrical properties of ultra-thin molybdenum films obtained by atomic layer deposition. The films were incorporated in conventional Van der Pauw and circular transmission line method test structures to explore the effect of film thickness on the resistivity, temperature coefficient of resistance, contact resistivity, and external electric field applied. The resistivity was shown to depend strongly on film thickness, while the temperature coefficient of resistance changed from positive to negative, indicating a change in the dominant conduction mechanism. A modest field effect was observed for the films in their thickness limit.

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DO - 10.1109/ICMTS59902.2024.10520676

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T3 - IEEE International Conference on Microelectronic Test Structures

BT - 2024 IEEE 36th International Conference on Microelectronic Test Structures, ICMTS 2024 - Proceedings

PB - IEEE

T2 - 36th IEEE International Conference on Microelectronic Test Structures, ICMTS 2024

Y2 - 15 April 2024 through 18 April 2024

ER -

Electrical behavior of ALD-molybdenum films in the thin-film limit

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