Electrical characterisation of gate dielectrics deposited with multipolar electron cyclotron resonance plasma source

I.G. Isai; Alexeij Y. Kovalgin; J. Holleman; Hans Wallinga; P.H. Woerlee; C. Cobianu

doi:10.1109/ESSDERC.2000.194805

Electrical characterisation of gate dielectrics deposited with multipolar electron cyclotron resonance plasma source

I.G. Isai, Alexeij Y. Kovalgin, J. Holleman, Hans Wallinga, P.H. Woerlee, C. Cobianu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

1 Citation (Scopus)

2 Downloads (Pure)

Abstract

Silicon oxide films have been deposited by plasma-enhanced chemical vapour deposition, at glass compatible temperatures. A multipolar electron cyclotron resonance plasma (ECR) source with SiH4/He and N2O was used. The electrical properties of the films were determined by means of C-V and I-V measurements. The dependencies of the electrical properties on gas-flow ratio and pressure were investigated. Critical electric fields as high as 6 MV/cm and net oxide charge densities as low as 1×1011 ions/cm2 have been obtained for the optimal deposition conditions. The oxide integrity versus CVD conditions was investigated by charge to breakdown measurements. MOSFETs have been fabricated in order to test the dielectric quality.

Original language	English
Title of host publication	Proceedings of the 30th European Solid State Device Research Conference
Place of Publication	Piscataway, NJ, USA
Publisher	IEEE
Pages	424-427
ISBN (Print)	2863322486
DOIs	https://doi.org/10.1109/ESSDERC.2000.194805
Publication status	Published - 11 Sept 2000
Event	30th European Solid-State Device Research Conference, ESSDERC 2000 - Cork, Ireland Duration: 11 Sept 2000 → 13 Sept 2000 Conference number: 30

Publication series

Name
Publisher	IEEE

Conference

Conference	30th European Solid-State Device Research Conference, ESSDERC 2000
Abbreviated title	ESSDERC 2000
Country/Territory	Ireland
City	Cork
Period	11/09/00 → 13/09/00

Keywords

METIS-113908
IR-17023

Access to Document

10.1109/ESSDERC.2000.194805

Cite this

@inproceedings{d039ce56da30459698d59e0b51b8cd56,

title = "Electrical characterisation of gate dielectrics deposited with multipolar electron cyclotron resonance plasma source",

abstract = "Silicon oxide films have been deposited by plasma-enhanced chemical vapour deposition, at glass compatible temperatures. A multipolar electron cyclotron resonance plasma (ECR) source with SiH4/He and N2O was used. The electrical properties of the films were determined by means of C-V and I-V measurements. The dependencies of the electrical properties on gas-flow ratio and pressure were investigated. Critical electric fields as high as 6 MV/cm and net oxide charge densities as low as 1×1011 ions/cm2 have been obtained for the optimal deposition conditions. The oxide integrity versus CVD conditions was investigated by charge to breakdown measurements. MOSFETs have been fabricated in order to test the dielectric quality.",

keywords = "METIS-113908, IR-17023",

author = "I.G. Isai and Kovalgin, {Alexeij Y.} and J. Holleman and Hans Wallinga and P.H. Woerlee and C. Cobianu",

year = "2000",

month = sep,

day = "11",

doi = "10.1109/ESSDERC.2000.194805",

language = "English",

isbn = "2863322486",

publisher = "IEEE",

pages = "424--427",

booktitle = "Proceedings of the 30th European Solid State Device Research Conference",

address = "United States",

note = "30th European Solid-State Device Research Conference, ESSDERC 2000, ESSDERC 2000 ; Conference date: 11-09-2000 Through 13-09-2000",

}

Isai, IG, Kovalgin, AY, Holleman, J, Wallinga, H, Woerlee, PH & Cobianu, C 2000, Electrical characterisation of gate dielectrics deposited with multipolar electron cyclotron resonance plasma source. in Proceedings of the 30th European Solid State Device Research Conference. IEEE, Piscataway, NJ, USA, pp. 424-427, 30th European Solid-State Device Research Conference, ESSDERC 2000, Cork, Ireland, 11/09/00. https://doi.org/10.1109/ESSDERC.2000.194805

Electrical characterisation of gate dielectrics deposited with multipolar electron cyclotron resonance plasma source. / Isai, I.G.; Kovalgin, Alexeij Y.; Holleman, J. et al.
Proceedings of the 30th European Solid State Device Research Conference. Piscataway, NJ, USA: IEEE, 2000. p. 424-427.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Electrical characterisation of gate dielectrics deposited with multipolar electron cyclotron resonance plasma source

AU - Isai, I.G.

AU - Kovalgin, Alexeij Y.

AU - Holleman, J.

AU - Wallinga, Hans

AU - Woerlee, P.H.

AU - Cobianu, C.

N1 - Conference code: 30

PY - 2000/9/11

Y1 - 2000/9/11

N2 - Silicon oxide films have been deposited by plasma-enhanced chemical vapour deposition, at glass compatible temperatures. A multipolar electron cyclotron resonance plasma (ECR) source with SiH4/He and N2O was used. The electrical properties of the films were determined by means of C-V and I-V measurements. The dependencies of the electrical properties on gas-flow ratio and pressure were investigated. Critical electric fields as high as 6 MV/cm and net oxide charge densities as low as 1×1011 ions/cm2 have been obtained for the optimal deposition conditions. The oxide integrity versus CVD conditions was investigated by charge to breakdown measurements. MOSFETs have been fabricated in order to test the dielectric quality.

AB - Silicon oxide films have been deposited by plasma-enhanced chemical vapour deposition, at glass compatible temperatures. A multipolar electron cyclotron resonance plasma (ECR) source with SiH4/He and N2O was used. The electrical properties of the films were determined by means of C-V and I-V measurements. The dependencies of the electrical properties on gas-flow ratio and pressure were investigated. Critical electric fields as high as 6 MV/cm and net oxide charge densities as low as 1×1011 ions/cm2 have been obtained for the optimal deposition conditions. The oxide integrity versus CVD conditions was investigated by charge to breakdown measurements. MOSFETs have been fabricated in order to test the dielectric quality.

KW - METIS-113908

KW - IR-17023

U2 - 10.1109/ESSDERC.2000.194805

DO - 10.1109/ESSDERC.2000.194805

M3 - Conference contribution

SN - 2863322486

SP - 424

EP - 427

BT - Proceedings of the 30th European Solid State Device Research Conference

PB - IEEE

CY - Piscataway, NJ, USA

T2 - 30th European Solid-State Device Research Conference, ESSDERC 2000

Y2 - 11 September 2000 through 13 September 2000

ER -

Electrical characterisation of gate dielectrics deposited with multipolar electron cyclotron resonance plasma source

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