Electrical characterisation of gate dielectrics deposited with multipolar electron cyclotron resonance plasma source

I.G. Isai, Alexeij Y. Kovalgin, J. Holleman, Hans Wallinga, P.H. Woerlee, C. Cobianu

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    1 Citation (Scopus)

    Abstract

    Silicon oxide films have been deposited by plasma-enhanced chemical vapour deposition, at glass compatible temperatures. A multipolar electron cyclotron resonance plasma (ECR) source with SiH4/He and N2O was used. The electrical properties of the films were determined by means of C-V and I-V measurements. The dependencies of the electrical properties on gas-flow ratio and pressure were investigated. Critical electric fields as high as 6 MV/cm and net oxide charge densities as low as 1×1011 ions/cm2 have been obtained for the optimal deposition conditions. The oxide integrity versus CVD conditions was investigated by charge to breakdown measurements. MOSFETs have been fabricated in order to test the dielectric quality.
    Original languageEnglish
    Title of host publicationProceedings of the 30th European Solid State Device Research Conference
    Place of PublicationPiscataway, NJ, USA
    PublisherIEEE
    Pages424-427
    ISBN (Print)2863322486
    DOIs
    Publication statusPublished - 11 Sep 2000
    Event30th European Solid-State Device Research Conference, ESSDERC 2000 - Cork, Ireland
    Duration: 11 Sep 200013 Sep 2000
    Conference number: 30

    Publication series

    Name
    PublisherIEEE

    Conference

    Conference30th European Solid-State Device Research Conference, ESSDERC 2000
    Abbreviated titleESSDERC 2000
    CountryIreland
    CityCork
    Period11/09/0013/09/00

    Keywords

    • METIS-113908
    • IR-17023

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  • Cite this

    Isai, I. G., Kovalgin, A. Y., Holleman, J., Wallinga, H., Woerlee, P. H., & Cobianu, C. (2000). Electrical characterisation of gate dielectrics deposited with multipolar electron cyclotron resonance plasma source. In Proceedings of the 30th European Solid State Device Research Conference (pp. 424-427). Piscataway, NJ, USA: IEEE. https://doi.org/10.1109/ESSDERC.2000.194805