Electrical characteristics of B+ and BF2+ implanted poly-Si and Poly-GexSi1-x as gate material for sub-0.25um applications

Cora Salm, D.T. van Veen, J. Holleman, P.H. Woerlee

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Original language	English
Title of host publication	Proceedings of the 25th European Solid State Device Research Conference, ESSDERC '95
Place of Publication	The Netherlands Congress Centre, The Hague
Pages	131-134
Publication status	Published - 25 Sep 1995

Cite this

@inproceedings{6cc5e35f200e4c6b826b4ad434c66e26,

title = "Electrical characteristics of B+ and BF2+ implanted poly-Si and Poly-GexSi1-x as gate material for sub-0.25um applications",

author = "Cora Salm and {van Veen}, D.T. and J. Holleman and P.H. Woerlee",

year = "1995",

month = sep,

day = "25",

language = "English",

pages = "131--134",

booktitle = "Proceedings of the 25th European Solid State Device Research Conference, ESSDERC '95",

}

Proceedings of the 25th European Solid State Device Research Conference, ESSDERC '95. The Netherlands Congress Centre, The Hague, 1995. p. 131-134.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Electrical characteristics of B+ and BF2+ implanted poly-Si and Poly-GexSi1-x as gate material for sub-0.25um applications

AU - Salm, Cora

AU - van Veen, D.T.

AU - Holleman, J.

AU - Woerlee, P.H.

PY - 1995/9/25

Y1 - 1995/9/25

M3 - Conference contribution

SP - 131

EP - 134

BT - Proceedings of the 25th European Solid State Device Research Conference, ESSDERC '95

CY - The Netherlands Congress Centre, The Hague

ER -