Electrical characteristics of B+ and BF2+ implanted poly-Si and Poly-GexSi1-x as gate material for sub-0.25um applications

Cora Salm, D.T. van Veen, J. Holleman, P.H. Woerlee

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    Original languageUndefined
    Title of host publicationProceedings of the 25th European Solid State Device Research Conference, ESSDERC '95
    Place of PublicationThe Netherlands Congress Centre, The Hague
    Pages131-134
    Publication statusPublished - 25 Sep 1995

    Keywords

    • METIS-113970

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