Abstract
The electrical properties of p-type doped poly-Si and poly-GexSi1-x, (x∼0.3) gate material were studied. The effect of dopant concentration and anneal temperature on the electrical behavior of these polycrystalline layers is investigated. A lower sheet resistance, higher Hall mobility and higher dopant activation is found for GexSi1-xcompared to Si at equal doping levels. MOS capacitors with B+and BF2+implanted gates were used to study boron penetration. Boron penetration is similar for Ge0.3Si0.7and Si. Gate depletion is dependent on the dopant activation hence GexSi1-xoffers the possibility for lower gate depletion compared to Si.
Original language | English |
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Title of host publication | ESSDERC 1995 - Proceedings of the 25th European Solid State Device Research Conference |
Editors | Henk C. de Graaff, Herma van Kranenburg |
Publisher | IEEE |
Pages | 131-134 |
Number of pages | 4 |
ISBN (Electronic) | 286332182X |
ISBN (Print) | 9782863321829 |
Publication status | Published - 1 Jan 1995 |
Event | 25th European Solid State Device Research Conference, ESSDERC 1995 - The Hague, Netherlands Duration: 25 Sept 1995 → 27 Sept 1995 Conference number: 25 |
Conference
Conference | 25th European Solid State Device Research Conference, ESSDERC 1995 |
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Abbreviated title | ESSDERC |
Country/Territory | Netherlands |
City | The Hague |
Period | 25/09/95 → 27/09/95 |