Electrical characteristics of B+and BF2+implanted poly-Si and poly-GexSi1-xas gate material for sub-0.25μm applications

C. Salm*, D. T. Van Veen, J. Holleman, P. H. Woerlee

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    3 Citations (Scopus)
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    The electrical properties of p-type doped poly-Si and poly-GexSi1-x, (x∼0.3) gate material were studied. The effect of dopant concentration and anneal temperature on the electrical behavior of these polycrystalline layers is investigated. A lower sheet resistance, higher Hall mobility and higher dopant activation is found for GexSi1-xcompared to Si at equal doping levels. MOS capacitors with B+and BF2+implanted gates were used to study boron penetration. Boron penetration is similar for Ge0.3Si0.7and Si. Gate depletion is dependent on the dopant activation hence GexSi1-xoffers the possibility for lower gate depletion compared to Si.

    Original languageEnglish
    Title of host publicationESSDERC 1995 - Proceedings of the 25th European Solid State Device Research Conference
    EditorsHenk C. de Graaff, Herma van Kranenburg
    PublisherIEEE Computer Society
    Number of pages4
    ISBN (Electronic)286332182X
    ISBN (Print)9782863321829
    Publication statusPublished - 1 Jan 1995
    Event25th European Solid State Device Research Conference, ESSDERC 1995 - The Hague, Netherlands
    Duration: 25 Sep 199527 Sep 1995
    Conference number: 25


    Conference25th European Solid State Device Research Conference, ESSDERC 1995
    Abbreviated titleESSDERC
    CityThe Hague


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