Electrical characteristics of B+and BF2+implanted poly-Si and poly-GexSi1-xas gate material for sub-0.25μm applications

C. Salm; D. T. Van Veen; J. Holleman; P. H. Woerlee

Electrical characteristics of B⁺and BF₂⁺implanted poly-Si and poly-Ge_xSi_1-xas gate material for sub-0.25μm applications

C. Salm^*, D. T. Van Veen, J. Holleman, P. H. Woerlee

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

3 Citations (Scopus)

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Abstract

The electrical properties of p-type doped poly-Si and poly-Ge_xSi_1-x, (x∼0.3) gate material were studied. The effect of dopant concentration and anneal temperature on the electrical behavior of these polycrystalline layers is investigated. A lower sheet resistance, higher Hall mobility and higher dopant activation is found for Ge_xSi_1-xcompared to Si at equal doping levels. MOS capacitors with B⁺and BF₂⁺implanted gates were used to study boron penetration. Boron penetration is similar for Ge_0.3Si_0.7and Si. Gate depletion is dependent on the dopant activation hence Ge_xSi_1-xoffers the possibility for lower gate depletion compared to Si.

Original language	English
Title of host publication	ESSDERC 1995 - Proceedings of the 25th European Solid State Device Research Conference
Editors	Henk C. de Graaff, Herma van Kranenburg
Publisher	IEEE Computer Society
Pages	131-134
Number of pages	4
ISBN (Electronic)	286332182X
ISBN (Print)	9782863321829
Publication status	Published - 1 Jan 1995
Event	25th European Solid State Device Research Conference, ESSDERC 1995 - The Hague, Netherlands Duration: 25 Sep 1995 → 27 Sep 1995 Conference number: 25

Conference

Conference	25th European Solid State Device Research Conference, ESSDERC 1995
Abbreviated title	ESSDERC
Country/Territory	Netherlands
City	The Hague
Period	25/09/95 → 27/09/95

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Salm, C., Van Veen, D. T., Holleman, J., & Woerlee, P. H. (1995). Electrical characteristics of B⁺and BF₂⁺implanted poly-Si and poly-Ge_xSi_1-xas gate material for sub-0.25μm applications. In H. C. de Graaff, & H. van Kranenburg (Eds.), ESSDERC 1995 - Proceedings of the 25th European Solid State Device Research Conference (pp. 131-134). [5435993] IEEE Computer Society. https://ieeexplore.ieee.org/document/5435993

@inproceedings{72c10ec594ee486581332736e2bdac06,

title = "Electrical characteristics of B+and BF2+implanted poly-Si and poly-GexSi1-xas gate material for sub-0.25μm applications",

abstract = "The electrical properties of p-type doped poly-Si and poly-GexSi1-x, (x∼0.3) gate material were studied. The effect of dopant concentration and anneal temperature on the electrical behavior of these polycrystalline layers is investigated. A lower sheet resistance, higher Hall mobility and higher dopant activation is found for GexSi1-xcompared to Si at equal doping levels. MOS capacitors with B+and BF2+implanted gates were used to study boron penetration. Boron penetration is similar for Ge0.3Si0.7and Si. Gate depletion is dependent on the dopant activation hence GexSi1-xoffers the possibility for lower gate depletion compared to Si.",

author = "C. Salm and {Van Veen}, {D. T.} and J. Holleman and Woerlee, {P. H.}",

year = "1995",

month = jan,

day = "1",

language = "English",

isbn = "9782863321829",

pages = "131--134",

editor = "{de Graaff}, {Henk C.} and {van Kranenburg}, Herma",

booktitle = "ESSDERC 1995 - Proceedings of the 25th European Solid State Device Research Conference",

publisher = "IEEE Computer Society",

address = "United States",

note = "25th European Solid State Device Research Conference, ESSDERC 1995, ESSDERC ; Conference date: 25-09-1995 Through 27-09-1995",

}

Salm, C, Van Veen, DT, Holleman, J & Woerlee, PH 1995, Electrical characteristics of B⁺and BF₂⁺implanted poly-Si and poly-Ge_xSi_1-xas gate material for sub-0.25μm applications. in HC de Graaff & H van Kranenburg (eds), ESSDERC 1995 - Proceedings of the 25th European Solid State Device Research Conference., 5435993, IEEE Computer Society, pp. 131-134, 25th European Solid State Device Research Conference, ESSDERC 1995, The Hague, Netherlands, 25/09/95. <https://ieeexplore.ieee.org/document/5435993>

Electrical characteristics of B⁺and BF₂⁺implanted poly-Si and poly-Ge_xSi_1-xas gate material for sub-0.25μm applications. / Salm, C.; Van Veen, D. T.; Holleman, J.; Woerlee, P. H.

ESSDERC 1995 - Proceedings of the 25th European Solid State Device Research Conference. ed. / Henk C. de Graaff; Herma van Kranenburg. IEEE Computer Society, 1995. p. 131-134 5435993.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Electrical characteristics of B+and BF2+implanted poly-Si and poly-GexSi1-xas gate material for sub-0.25μm applications

AU - Salm, C.

AU - Van Veen, D. T.

AU - Holleman, J.

AU - Woerlee, P. H.

N1 - Conference code: 25

PY - 1995/1/1

Y1 - 1995/1/1

N2 - The electrical properties of p-type doped poly-Si and poly-GexSi1-x, (x∼0.3) gate material were studied. The effect of dopant concentration and anneal temperature on the electrical behavior of these polycrystalline layers is investigated. A lower sheet resistance, higher Hall mobility and higher dopant activation is found for GexSi1-xcompared to Si at equal doping levels. MOS capacitors with B+and BF2+implanted gates were used to study boron penetration. Boron penetration is similar for Ge0.3Si0.7and Si. Gate depletion is dependent on the dopant activation hence GexSi1-xoffers the possibility for lower gate depletion compared to Si.

AB - The electrical properties of p-type doped poly-Si and poly-GexSi1-x, (x∼0.3) gate material were studied. The effect of dopant concentration and anneal temperature on the electrical behavior of these polycrystalline layers is investigated. A lower sheet resistance, higher Hall mobility and higher dopant activation is found for GexSi1-xcompared to Si at equal doping levels. MOS capacitors with B+and BF2+implanted gates were used to study boron penetration. Boron penetration is similar for Ge0.3Si0.7and Si. Gate depletion is dependent on the dopant activation hence GexSi1-xoffers the possibility for lower gate depletion compared to Si.

UR - http://www.scopus.com/inward/record.url?scp=84920721072&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84920721072

SN - 9782863321829

SP - 131

EP - 134

BT - ESSDERC 1995 - Proceedings of the 25th European Solid State Device Research Conference

A2 - de Graaff, Henk C.

A2 - van Kranenburg, Herma

PB - IEEE Computer Society

T2 - 25th European Solid State Device Research Conference, ESSDERC 1995

Y2 - 25 September 1995 through 27 September 1995

ER -

Electrical characteristics of B⁺and BF₂⁺implanted poly-Si and poly-Ge_xSi_1-xas gate material for sub-0.25μm applications

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