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Electrical characteristics of B+and BF2+implanted poly-Si and poly-GexSi1-xas gate material for sub-0.25μm applications
C. Salm*, D. T. Van Veen, J. Holleman, P. H. Woerlee
*Corresponding author for this work
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review
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