Electrical characterization of hot-wire assisted atomic layer deposited Tungsten films

Kees  van der Zouw; Antonius A.I. Aarnink; Jurriaan  Schmitz; Alexey Y. Kovalgin

doi:10.1109/ICMTS.2019.8730954

Electrical characterization of hot-wire assisted atomic layer deposited Tungsten films

Kees van der Zouw, Antonius A.I. Aarnink, Jurriaan Schmitz, Alexey Y. Kovalgin

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

1 Citation (Scopus)

446 Downloads (Pure)

Abstract

In this work, we applied conventional Van der Pauw and circular transmission line method (CTLM) test structures to determine the sheet and contact resistance of ultra-thin (1-10 nm) tungsten films grown by Hot-Wire assisted Atomic Layer Deposition, as well as their temperature coefficient of resistance (TCR). We finally explored the field effect (FE) in these layers. From fundamental point of view, it is important to explore the impact of film thickness on film's electrical behavior, whereas practically this knowledge is crucial for the existing and foreseen applications.

Original language	English
Title of host publication	2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019
Publisher	IEEE
Pages	48-53
Number of pages	6
ISBN (Electronic)	9781728114668
ISBN (Print)	978-1-7281-1464-4
DOIs	https://doi.org/10.1109/ICMTS.2019.8730954
Publication status	Published - 18 Mar 2019
Event	32nd IEEE International Conference on Microelectronic Test Structures, ICMTS 2019 - Kitakyushu City, Japan Duration: 18 Mar 2019 → 21 Mar 2019 Conference number: 32

Conference

Conference	32nd IEEE International Conference on Microelectronic Test Structures, ICMTS 2019
Abbreviated title	ICMTS
Country/Territory	Japan
City	Kitakyushu City
Period	18/03/19 → 21/03/19

Keywords

Atomic layer deposition
Contact resistance
Field effect
Hot-wire
Sheet resistance
Spectroscopic ellipsometry
Temperature coefficient of resistance
Thin films
Transfer length
Tungsten

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10.1109/ICMTS.2019.8730954

VanderZouw2019_ICMTSAccepted author version, 801 KBLicence: Taverne

Cite this

@inproceedings{21fb4cf86d3a437d8ddda3fce2ddc273,

title = "Electrical characterization of hot-wire assisted atomic layer deposited Tungsten films",

abstract = "In this work, we applied conventional Van der Pauw and circular transmission line method (CTLM) test structures to determine the sheet and contact resistance of ultra-thin (1-10 nm) tungsten films grown by Hot-Wire assisted Atomic Layer Deposition, as well as their temperature coefficient of resistance (TCR). We finally explored the field effect (FE) in these layers. From fundamental point of view, it is important to explore the impact of film thickness on film's electrical behavior, whereas practically this knowledge is crucial for the existing and foreseen applications.",

keywords = "Atomic layer deposition, Contact resistance, Field effect, Hot-wire, Sheet resistance, Spectroscopic ellipsometry, Temperature coefficient of resistance, Thin films, Transfer length, Tungsten",

author = "{van der Zouw}, Kees and Aarnink, {Antonius A.I.} and Jurriaan Schmitz and Kovalgin, {Alexey Y.}",

year = "2019",

month = mar,

day = "18",

doi = "10.1109/ICMTS.2019.8730954",

language = "English",

isbn = "978-1-7281-1464-4",

pages = "48--53",

booktitle = "2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019",

publisher = "IEEE",

address = "United States",

note = "32nd IEEE International Conference on Microelectronic Test Structures, ICMTS 2019, ICMTS ; Conference date: 18-03-2019 Through 21-03-2019",

}

van der Zouw, K , Aarnink, AAI , Schmitz, J & Kovalgin, AY 2019, Electrical characterization of hot-wire assisted atomic layer deposited Tungsten films. in 2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019., 8730954, IEEE, pp. 48-53, 32nd IEEE International Conference on Microelectronic Test Structures, ICMTS 2019, Kitakyushu City, Japan, 18/03/19. https://doi.org/10.1109/ICMTS.2019.8730954

Electrical characterization of hot-wire assisted atomic layer deposited Tungsten films. / van der Zouw, Kees ; Aarnink, Antonius A.I.; Schmitz, Jurriaan et al.
2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019. IEEE, 2019. p. 48-53 8730954.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Electrical characterization of hot-wire assisted atomic layer deposited Tungsten films

AU - van der Zouw, Kees

AU - Aarnink, Antonius A.I.

AU - Schmitz, Jurriaan

AU - Kovalgin, Alexey Y.

N1 - Conference code: 32

PY - 2019/3/18

Y1 - 2019/3/18

N2 - In this work, we applied conventional Van der Pauw and circular transmission line method (CTLM) test structures to determine the sheet and contact resistance of ultra-thin (1-10 nm) tungsten films grown by Hot-Wire assisted Atomic Layer Deposition, as well as their temperature coefficient of resistance (TCR). We finally explored the field effect (FE) in these layers. From fundamental point of view, it is important to explore the impact of film thickness on film's electrical behavior, whereas practically this knowledge is crucial for the existing and foreseen applications.

AB - In this work, we applied conventional Van der Pauw and circular transmission line method (CTLM) test structures to determine the sheet and contact resistance of ultra-thin (1-10 nm) tungsten films grown by Hot-Wire assisted Atomic Layer Deposition, as well as their temperature coefficient of resistance (TCR). We finally explored the field effect (FE) in these layers. From fundamental point of view, it is important to explore the impact of film thickness on film's electrical behavior, whereas practically this knowledge is crucial for the existing and foreseen applications.

KW - Atomic layer deposition

KW - Contact resistance

KW - Field effect

KW - Hot-wire

KW - Sheet resistance

KW - Spectroscopic ellipsometry

KW - Temperature coefficient of resistance

KW - Thin films

KW - Transfer length

KW - Tungsten

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DO - 10.1109/ICMTS.2019.8730954

M3 - Conference contribution

SN - 978-1-7281-1464-4

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EP - 53

BT - 2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019

PB - IEEE

T2 - 32nd IEEE International Conference on Microelectronic Test Structures, ICMTS 2019

Y2 - 18 March 2019 through 21 March 2019

ER -

Electrical characterization of hot-wire assisted atomic layer deposited Tungsten films

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