Electrical characterization of hot-wire assisted atomic layer deposited Tungsten films

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    Abstract

    In this work, we applied conventional Van der Pauw and circular transmission line method (CTLM) test structures to determine the sheet and contact resistance of ultra-thin (1-10 nm) tungsten films grown by Hot Wire assisted Atomic Layer Deposition, as well as their temperature coefficient of resistance (TCR). We finally explored the field effect (FE) in these layers.
    Original languageEnglish
    Title of host publication2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019
    PublisherIEEE
    Pages48-53
    Number of pages6
    ISBN (Electronic)9781728114668
    ISBN (Print)978-1-7281-1464-4
    DOIs
    Publication statusPublished - 18 Mar 2019
    Event32nd IEEE International Conference on Microelectronic Test Structures, ICMTS 2019 - Kitakyushu City, Japan
    Duration: 18 Mar 201921 Mar 2019
    Conference number: 32

    Conference

    Conference32nd IEEE International Conference on Microelectronic Test Structures, ICMTS 2019
    Abbreviated titleICMTS
    CountryJapan
    CityKitakyushu City
    Period18/03/1921/03/19

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    Keywords

    • Atomic layer deposition
    • Contact resistance
    • Field effect
    • Hot-wire
    • Sheet resistance
    • Spectroscopic ellipsometry
    • Temperature coefficient of resistance
    • Thin films
    • Transfer length
    • Tungsten

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