Electrical characterization of hot-wire assisted atomic layer deposited Tungsten films

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Abstract

In this work, we applied conventional Van der Pauw and circular transmission line method (CTLM) test structures to determine the sheet and contact resistance of ultra-thin (1-10 nm) tungsten films grown by Hot Wire assisted Atomic Layer Deposition, as well as their temperature coefficient of resistance (TCR). We finally explored the field effect (FE) in these layers.
Original languageEnglish
Title of host publication2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019
PublisherIEEE
Pages48-53
Number of pages6
ISBN (Electronic)9781728114668
ISBN (Print)978-1-7281-1464-4
DOIs
Publication statusPublished - 18 Mar 2019
Event32nd IEEE International Conference on Microelectronic Test Structures, ICMTS 2019 - Kitakyushu City, Japan
Duration: 18 Mar 201921 Mar 2019
Conference number: 32

Conference

Conference32nd IEEE International Conference on Microelectronic Test Structures, ICMTS 2019
Abbreviated titleICMTS
CountryJapan
CityKitakyushu City
Period18/03/1921/03/19

Fingerprint

Atomic layer deposition
Sheet resistance
Contact resistance
Tungsten
Electric lines
Wire
Temperature

Keywords

  • Atomic layer deposition
  • Contact resistance
  • Field effect
  • Hot-wire
  • Sheet resistance
  • Spectroscopic ellipsometry
  • Temperature coefficient of resistance
  • Thin films
  • Transfer length
  • Tungsten

Cite this

van der Zouw, Kees ; Aarnink, Antonius A.I. ; Schmitz, Jurriaan ; Kovalgin, Alexey Y. / Electrical characterization of hot-wire assisted atomic layer deposited Tungsten films. 2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019. IEEE, 2019. pp. 48-53
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title = "Electrical characterization of hot-wire assisted atomic layer deposited Tungsten films",
abstract = "In this work, we applied conventional Van der Pauw and circular transmission line method (CTLM) test structures to determine the sheet and contact resistance of ultra-thin (1-10 nm) tungsten films grown by Hot Wire assisted Atomic Layer Deposition, as well as their temperature coefficient of resistance (TCR). We finally explored the field effect (FE) in these layers.",
keywords = "Atomic layer deposition, Contact resistance, Field effect, Hot-wire, Sheet resistance, Spectroscopic ellipsometry, Temperature coefficient of resistance, Thin films, Transfer length, Tungsten",
author = "{van der Zouw}, Kees and Aarnink, {Antonius A.I.} and Jurriaan Schmitz and Kovalgin, {Alexey Y.}",
year = "2019",
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doi = "10.1109/ICMTS.2019.8730954",
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van der Zouw, K, Aarnink, AAI, Schmitz, J & Kovalgin, AY 2019, Electrical characterization of hot-wire assisted atomic layer deposited Tungsten films. in 2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019. IEEE, pp. 48-53, 32nd IEEE International Conference on Microelectronic Test Structures, ICMTS 2019, Kitakyushu City, Japan, 18/03/19. https://doi.org/10.1109/ICMTS.2019.8730954

Electrical characterization of hot-wire assisted atomic layer deposited Tungsten films. / van der Zouw, Kees ; Aarnink, Antonius A.I.; Schmitz, Jurriaan ; Kovalgin, Alexey Y.

2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019. IEEE, 2019. p. 48-53.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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