Electrical characterization of hot-wire assisted atomic layer deposited Tungsten films

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    28 Downloads (Pure)

    Abstract

    In this work, we applied conventional Van der Pauw and circular transmission line method (CTLM) test structures to determine the sheet and contact resistance of ultra-thin (1-10 nm) tungsten films grown by Hot Wire assisted Atomic Layer Deposition, as well as their temperature coefficient of resistance (TCR). We finally explored the field effect (FE) in these layers.
    Original languageEnglish
    Title of host publication2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019
    PublisherIEEE
    Pages48-53
    Number of pages6
    ISBN (Electronic)9781728114668
    ISBN (Print)978-1-7281-1464-4
    DOIs
    Publication statusPublished - 18 Mar 2019
    Event32nd IEEE International Conference on Microelectronic Test Structures, ICMTS 2019 - Kitakyushu City, Japan
    Duration: 18 Mar 201921 Mar 2019
    Conference number: 32

    Conference

    Conference32nd IEEE International Conference on Microelectronic Test Structures, ICMTS 2019
    Abbreviated titleICMTS
    CountryJapan
    CityKitakyushu City
    Period18/03/1921/03/19

    Fingerprint

    Atomic layer deposition
    Sheet resistance
    Contact resistance
    Tungsten
    Electric lines
    Wire
    Temperature

    Keywords

    • Atomic layer deposition
    • Contact resistance
    • Field effect
    • Hot-wire
    • Sheet resistance
    • Spectroscopic ellipsometry
    • Temperature coefficient of resistance
    • Thin films
    • Transfer length
    • Tungsten

    Cite this

    van der Zouw, Kees ; Aarnink, Antonius A.I. ; Schmitz, Jurriaan ; Kovalgin, Alexey Y. / Electrical characterization of hot-wire assisted atomic layer deposited Tungsten films. 2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019. IEEE, 2019. pp. 48-53
    @inproceedings{21fb4cf86d3a437d8ddda3fce2ddc273,
    title = "Electrical characterization of hot-wire assisted atomic layer deposited Tungsten films",
    abstract = "In this work, we applied conventional Van der Pauw and circular transmission line method (CTLM) test structures to determine the sheet and contact resistance of ultra-thin (1-10 nm) tungsten films grown by Hot Wire assisted Atomic Layer Deposition, as well as their temperature coefficient of resistance (TCR). We finally explored the field effect (FE) in these layers.",
    keywords = "Atomic layer deposition, Contact resistance, Field effect, Hot-wire, Sheet resistance, Spectroscopic ellipsometry, Temperature coefficient of resistance, Thin films, Transfer length, Tungsten",
    author = "{van der Zouw}, Kees and Aarnink, {Antonius A.I.} and Jurriaan Schmitz and Kovalgin, {Alexey Y.}",
    year = "2019",
    month = "3",
    day = "18",
    doi = "10.1109/ICMTS.2019.8730954",
    language = "English",
    isbn = "978-1-7281-1464-4",
    pages = "48--53",
    booktitle = "2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019",
    publisher = "IEEE",
    address = "United States",

    }

    van der Zouw, K, Aarnink, AAI, Schmitz, J & Kovalgin, AY 2019, Electrical characterization of hot-wire assisted atomic layer deposited Tungsten films. in 2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019. IEEE, pp. 48-53, 32nd IEEE International Conference on Microelectronic Test Structures, ICMTS 2019, Kitakyushu City, Japan, 18/03/19. https://doi.org/10.1109/ICMTS.2019.8730954

    Electrical characterization of hot-wire assisted atomic layer deposited Tungsten films. / van der Zouw, Kees ; Aarnink, Antonius A.I.; Schmitz, Jurriaan ; Kovalgin, Alexey Y.

    2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019. IEEE, 2019. p. 48-53.

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    TY - GEN

    T1 - Electrical characterization of hot-wire assisted atomic layer deposited Tungsten films

    AU - van der Zouw, Kees

    AU - Aarnink, Antonius A.I.

    AU - Schmitz, Jurriaan

    AU - Kovalgin, Alexey Y.

    PY - 2019/3/18

    Y1 - 2019/3/18

    N2 - In this work, we applied conventional Van der Pauw and circular transmission line method (CTLM) test structures to determine the sheet and contact resistance of ultra-thin (1-10 nm) tungsten films grown by Hot Wire assisted Atomic Layer Deposition, as well as their temperature coefficient of resistance (TCR). We finally explored the field effect (FE) in these layers.

    AB - In this work, we applied conventional Van der Pauw and circular transmission line method (CTLM) test structures to determine the sheet and contact resistance of ultra-thin (1-10 nm) tungsten films grown by Hot Wire assisted Atomic Layer Deposition, as well as their temperature coefficient of resistance (TCR). We finally explored the field effect (FE) in these layers.

    KW - Atomic layer deposition

    KW - Contact resistance

    KW - Field effect

    KW - Hot-wire

    KW - Sheet resistance

    KW - Spectroscopic ellipsometry

    KW - Temperature coefficient of resistance

    KW - Thin films

    KW - Transfer length

    KW - Tungsten

    UR - http://www.scopus.com/inward/record.url?scp=85067848718&partnerID=8YFLogxK

    U2 - 10.1109/ICMTS.2019.8730954

    DO - 10.1109/ICMTS.2019.8730954

    M3 - Conference contribution

    SN - 978-1-7281-1464-4

    SP - 48

    EP - 53

    BT - 2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019

    PB - IEEE

    ER -