Electrical characterization of residual bulk defects after laser annealing of implanted shallow junctions

S. Liu; V. Gonda; T. L.M. Scholtes; L. K. Nanver

doi:10.1109/IWJT.2006.220873

Electrical characterization of residual bulk defects after laser annealing of implanted shallow junctions

S. Liu^*, V. Gonda, T. L.M. Scholtes, L. K. Nanver

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

1 Citation (Scopus)

Abstract

A set of circular ring-gate JFET test structures has been designed with which differential measurements can be utilized to electrically investigate the residual defects after the ELA (Excimer Laser Annealing) of implanted shallow junctions. The implanted ELA junction forms the top gate of the JFET and the diode I-V characteristics, sheet resistance and capacitance of the laterally uniform region below this gate, as well as the characteristics of the underlying pn junction formed between the bottom-gate and the source-channel-drain region can be determined. The measurements are used to evaluate the influence of various implantation parameters and laser energies on the residual defects associated with the shallow junction formation.

Original language	English
Title of host publication	IWJT '06
Subtitle of host publication	Extended Abstracts of the Sixth International Workshop on Junction Technology
Pages	112-115
Number of pages	4
DOIs	https://doi.org/10.1109/IWJT.2006.220873
Publication status	Published - 1 Dec 2006
Externally published	Yes
Event	Extended Abstracts of the 6th International Workshop on Junction Technology, IWJT '06 - Shanghai, China Duration: 15 May 2006 → 16 May 2006 http://www.iwjt.org/

Conference

Conference	Extended Abstracts of the 6th International Workshop on Junction Technology, IWJT '06
Country/Territory	China
City	Shanghai
Period	15/05/06 → 16/05/06
Internet address	http://www.iwjt.org/

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10.1109/IWJT.2006.220873

Cite this

@inproceedings{e004630d8cef4bc2ae137a08c9d6be81,

title = "Electrical characterization of residual bulk defects after laser annealing of implanted shallow junctions",

abstract = "A set of circular ring-gate JFET test structures has been designed with which differential measurements can be utilized to electrically investigate the residual defects after the ELA (Excimer Laser Annealing) of implanted shallow junctions. The implanted ELA junction forms the top gate of the JFET and the diode I-V characteristics, sheet resistance and capacitance of the laterally uniform region below this gate, as well as the characteristics of the underlying pn junction formed between the bottom-gate and the source-channel-drain region can be determined. The measurements are used to evaluate the influence of various implantation parameters and laser energies on the residual defects associated with the shallow junction formation.",

author = "S. Liu and V. Gonda and Scholtes, {T. L.M.} and Nanver, {L. K.}",

year = "2006",

month = dec,

day = "1",

doi = "10.1109/IWJT.2006.220873",

language = "English",

isbn = "1424400473",

pages = "112--115",

booktitle = "IWJT '06",

note = "Extended Abstracts of the 6th International Workshop on Junction Technology, IWJT '06 ; Conference date: 15-05-2006 Through 16-05-2006",

url = "http://www.iwjt.org/",

}

Liu, S, Gonda, V, Scholtes, TLM & Nanver, LK 2006, Electrical characterization of residual bulk defects after laser annealing of implanted shallow junctions. in IWJT '06: Extended Abstracts of the Sixth International Workshop on Junction Technology., 1669460, pp. 112-115, Extended Abstracts of the 6th International Workshop on Junction Technology, IWJT '06, Shanghai, China, 15/05/06. https://doi.org/10.1109/IWJT.2006.220873

Electrical characterization of residual bulk defects after laser annealing of implanted shallow junctions. / Liu, S.; Gonda, V.; Scholtes, T. L.M. et al.
IWJT '06: Extended Abstracts of the Sixth International Workshop on Junction Technology. 2006. p. 112-115 1669460.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Electrical characterization of residual bulk defects after laser annealing of implanted shallow junctions

AU - Liu, S.

AU - Gonda, V.

AU - Scholtes, T. L.M.

AU - Nanver, L. K.

PY - 2006/12/1

Y1 - 2006/12/1

N2 - A set of circular ring-gate JFET test structures has been designed with which differential measurements can be utilized to electrically investigate the residual defects after the ELA (Excimer Laser Annealing) of implanted shallow junctions. The implanted ELA junction forms the top gate of the JFET and the diode I-V characteristics, sheet resistance and capacitance of the laterally uniform region below this gate, as well as the characteristics of the underlying pn junction formed between the bottom-gate and the source-channel-drain region can be determined. The measurements are used to evaluate the influence of various implantation parameters and laser energies on the residual defects associated with the shallow junction formation.

AB - A set of circular ring-gate JFET test structures has been designed with which differential measurements can be utilized to electrically investigate the residual defects after the ELA (Excimer Laser Annealing) of implanted shallow junctions. The implanted ELA junction forms the top gate of the JFET and the diode I-V characteristics, sheet resistance and capacitance of the laterally uniform region below this gate, as well as the characteristics of the underlying pn junction formed between the bottom-gate and the source-channel-drain region can be determined. The measurements are used to evaluate the influence of various implantation parameters and laser energies on the residual defects associated with the shallow junction formation.

UR - http://www.scopus.com/inward/record.url?scp=34250182748&partnerID=8YFLogxK

U2 - 10.1109/IWJT.2006.220873

DO - 10.1109/IWJT.2006.220873

M3 - Conference contribution

AN - SCOPUS:34250182748

SN - 1424400473

SN - 9781424400478

SP - 112

EP - 115

BT - IWJT '06

T2 - Extended Abstracts of the 6th International Workshop on Junction Technology, IWJT '06

Y2 - 15 May 2006 through 16 May 2006

ER -

Electrical characterization of residual bulk defects after laser annealing of implanted shallow junctions

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