Electrical characterization of residual bulk defects after laser annealing of implanted shallow junctions

S. Liu*, V. Gonda, T. L.M. Scholtes, L. K. Nanver

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1 Citation (Scopus)

Abstract

A set of circular ring-gate JFET test structures has been designed with which differential measurements can be utilized to electrically investigate the residual defects after the ELA (Excimer Laser Annealing) of implanted shallow junctions. The implanted ELA junction forms the top gate of the JFET and the diode I-V characteristics, sheet resistance and capacitance of the laterally uniform region below this gate, as well as the characteristics of the underlying pn junction formed between the bottom-gate and the source-channel-drain region can be determined. The measurements are used to evaluate the influence of various implantation parameters and laser energies on the residual defects associated with the shallow junction formation.

Original languageEnglish
Title of host publicationIWJT '06
Subtitle of host publicationExtended Abstracts of the Sixth International Workshop on Junction Technology
Pages112-115
Number of pages4
DOIs
Publication statusPublished - 1 Dec 2006
Externally publishedYes
EventExtended Abstracts of the 6th International Workshop on Junction Technology, IWJT '06 - Shanghai, China
Duration: 15 May 200616 May 2006
http://www.iwjt.org/

Conference

ConferenceExtended Abstracts of the 6th International Workshop on Junction Technology, IWJT '06
CountryChina
CityShanghai
Period15/05/0616/05/06
Internet address

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    Liu, S., Gonda, V., Scholtes, T. L. M., & Nanver, L. K. (2006). Electrical characterization of residual bulk defects after laser annealing of implanted shallow junctions. In IWJT '06: Extended Abstracts of the Sixth International Workshop on Junction Technology (pp. 112-115). [1669460] https://doi.org/10.1109/IWJT.2006.220873