Electrical characterization of residual implantation-induced defects in the vicinity of laser-annealed implanted ultrashallow junctions

V. Gonda*, S. Liu, T. L.M. Scholtes, L. K. Nanver

*Corresponding author for this work

Research output: Contribution to journalConference articleAcademicpeer-review

5 Citations (Scopus)

Abstract

Ultrashallow junctions (USJ) were created by tilted 5 keV As+ implantation to a dose of 3×1015 cm-2 followed by excimer laser annealing (ELA). Sheet resistance and capacitances were measured in the background layer below the USJ. Results showed that sheet resistance was dependent on the laser energies in the close vicinity of these diodes. Doping profiles extracted from the capacitances indicated electrical deactivation caused by the residual implantation defects. The extent and location of the residual damage was found to be strongly dependent on the implantation dose and tilt angles, and also influenced by the laser annealing.

Original languageEnglish
Pages (from-to)173-177
Number of pages5
JournalMaterials Research Society Symposium Proceedings
Volume912
DOIs
Publication statusPublished - 21 Nov 2006
Externally publishedYes
Event2006 MRS Spring Meeting & Exhibit - San Francisco, United States
Duration: 17 Apr 200621 Apr 2006
https://www.mrs.org/spring2006

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