Electrical characterization of residual implantation-induced defects in the vicinity of laser-annealed implanted ultrashallow junctions

V. Gonda; S. Liu; T. L.M. Scholtes; L. K. Nanver

doi:10.1557/PROC-0912-C05-02

Electrical characterization of residual implantation-induced defects in the vicinity of laser-annealed implanted ultrashallow junctions

V. Gonda^*, S. Liu, T. L.M. Scholtes, L. K. Nanver

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › Academic › peer-review

5 Citations (Scopus)

Abstract

Ultrashallow junctions (USJ) were created by tilted 5 keV As⁺ implantation to a dose of 3×10¹⁵ cm^-2 followed by excimer laser annealing (ELA). Sheet resistance and capacitances were measured in the background layer below the USJ. Results showed that sheet resistance was dependent on the laser energies in the close vicinity of these diodes. Doping profiles extracted from the capacitances indicated electrical deactivation caused by the residual implantation defects. The extent and location of the residual damage was found to be strongly dependent on the implantation dose and tilt angles, and also influenced by the laser annealing.

Original language	English
Pages (from-to)	173-177
Number of pages	5
Journal	Materials Research Society Symposium Proceedings
Volume	912
DOIs	https://doi.org/10.1557/PROC-0912-C05-02
Publication status	Published - 21 Nov 2006
Externally published	Yes
Event	2006 MRS Spring Meeting & Exhibit - San Francisco, United States Duration: 17 Apr 2006 → 21 Apr 2006 https://www.mrs.org/spring2006

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title = "Electrical characterization of residual implantation-induced defects in the vicinity of laser-annealed implanted ultrashallow junctions",

abstract = "Ultrashallow junctions (USJ) were created by tilted 5 keV As+ implantation to a dose of 3×1015 cm-2 followed by excimer laser annealing (ELA). Sheet resistance and capacitances were measured in the background layer below the USJ. Results showed that sheet resistance was dependent on the laser energies in the close vicinity of these diodes. Doping profiles extracted from the capacitances indicated electrical deactivation caused by the residual implantation defects. The extent and location of the residual damage was found to be strongly dependent on the implantation dose and tilt angles, and also influenced by the laser annealing.",

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T1 - Electrical characterization of residual implantation-induced defects in the vicinity of laser-annealed implanted ultrashallow junctions

AU - Gonda, V.

AU - Liu, S.

AU - Scholtes, T. L.M.

AU - Nanver, L. K.

PY - 2006/11/21

Y1 - 2006/11/21

N2 - Ultrashallow junctions (USJ) were created by tilted 5 keV As+ implantation to a dose of 3×1015 cm-2 followed by excimer laser annealing (ELA). Sheet resistance and capacitances were measured in the background layer below the USJ. Results showed that sheet resistance was dependent on the laser energies in the close vicinity of these diodes. Doping profiles extracted from the capacitances indicated electrical deactivation caused by the residual implantation defects. The extent and location of the residual damage was found to be strongly dependent on the implantation dose and tilt angles, and also influenced by the laser annealing.

AB - Ultrashallow junctions (USJ) were created by tilted 5 keV As+ implantation to a dose of 3×1015 cm-2 followed by excimer laser annealing (ELA). Sheet resistance and capacitances were measured in the background layer below the USJ. Results showed that sheet resistance was dependent on the laser energies in the close vicinity of these diodes. Doping profiles extracted from the capacitances indicated electrical deactivation caused by the residual implantation defects. The extent and location of the residual damage was found to be strongly dependent on the implantation dose and tilt angles, and also influenced by the laser annealing.

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U2 - 10.1557/PROC-0912-C05-02

DO - 10.1557/PROC-0912-C05-02

M3 - Conference article

AN - SCOPUS:33751061019

VL - 912

SP - 173

EP - 177

JO - Materials Research Society symposia proceedings

JF - Materials Research Society symposia proceedings

SN - 0272-9172

T2 - 2006 MRS Spring Meeting & Exhibit

Y2 - 17 April 2006 through 21 April 2006

ER -

Electrical characterization of residual implantation-induced defects in the vicinity of laser-annealed implanted ultrashallow junctions

Abstract

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