Ultrashallow junctions (USJ) were created by tilted 5 keV As+ implantation to a dose of 3×1015 cm-2 followed by excimer laser annealing (ELA). Sheet resistance and capacitances were measured in the background layer below the USJ. Results showed that sheet resistance was dependent on the laser energies in the close vicinity of these diodes. Doping profiles extracted from the capacitances indicated electrical deactivation caused by the residual implantation defects. The extent and location of the residual damage was found to be strongly dependent on the implantation dose and tilt angles, and also influenced by the laser annealing.
|Number of pages||5|
|Journal||Materials Research Society Symposium Proceedings|
|Publication status||Published - 21 Nov 2006|
|Event||2006 MRS Spring Meeting & Exhibit - San Francisco, United States|
Duration: 17 Apr 2006 → 21 Apr 2006